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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119 E7796

Name: BSS119 E7796
Brand: Infineon Technologies
SKU: BSS119 E7796
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119 E7796

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119 E7796.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS119 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET with 100 V V_DS, 6 Ω R_DS(on) at V_GS = 10 V and I_D = 0.17 A, rated for dv/dt up to 6 kV/µs, and housed in PG-SOT23 package - used in low-power switching, level-shifted gate drive, and load-switching circuits in industrial control modules.

For engineers reviewing the BSS119 datasheet, BSS119 pinout, BSS119 application, or BSS119 equivalent, this page delivers verified electrical specs, thermal behavior, safe operating area limits, reverse diode performance, and real-world design implications for logic-compatible MOSFET selection in space-constrained DC-DC bias rails and signal-path switches.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage (V_GS(th)) of 1.3–2.3 V and supports logic-level drive down to 3.4 V plateau voltage, enabling direct interface with 3.3 V microcontrollers. Its dv/dt rating of 6 kV/µs ensures robustness against fast transient-induced false turn-on in inductive load switching.

Dynamic parameters include C_iss = 60–78 pF, Q_g = 1.67–2.5 nC, and t_r/t_f < 5 ns / 40 ns, confirming suitability for high-frequency (<1 MHz) low-duty-cycle switching where gate charge and capacitance directly impact driver loss and timing precision.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports operation across 24 V industrial bus rails with 2× safety margin against transients.
R_DS(on) @ V_GS=10 V	3.4–6 Ω - determines conduction loss in 0.13–0.17 A continuous load paths; impacts thermal rise in SOT23 footprint.
I_D (continuous)	0.17 A @ T_A=25°C - defines maximum steady-state current before derating; limited by 350 K/W R_thJA.
Q_g	1.67–2.5 nC - sets minimum gate driver current requirement for <100 ns switching transitions at 1 MHz.
dv/dt rating	6 kV/µs - enables reliable operation in noisy environments with fast-varying drain voltages, e.g., relay coil snubbing.
V_GS(th)	1.3–2.3 V - ensures turn-on with standard 3.3 V GPIO without level-shifting; avoids marginal activation near noise floor.
t_r/t_f	3.1–4.6 ns / 27–40 ns - constrains minimum pulse width and dead-time in half-bridge auxiliary switches.

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, lead-free, tape-and-reel (3000 pcs/reel). Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Accepts logic-level voltage (≥3.4 V plateau) to fully enhance channel; requires ≤2.5 nC total charge for full transition.
Pin 2 (Source)	Reference node for gate drive and current return	Must be tied to local ground or low-impedance return path; source inductance directly affects switching stability and dv/dt immunity.
Pin 3 (Drain)	High-side or low-side power terminal	Handles 100 V blocking and 0.17 A continuous current; connects to inductive or capacitive loads requiring controlled turn-off recovery (t_rr = 21.7–32.5 ns).

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Turns on fully with 3.3 V MCU outputs due to low V_GS(th) and 3.4 V gate plateau - eliminates external level shifters in compact control boards.
dv/dt ruggedness	Rated 6 kV/µs - suppresses parasitic turn-on during fast drain voltage transients in relay drivers and solenoid interfaces.
Integrated body diode	Forward voltage V_SD = 0.8–1.2 V at I_S = 0.17 A - provides freewheeling path in low-current inductive loads without external diode.
Thermal resistance	R_thJS = 350 K/W - defines junction-to-ambient temperature rise of ~60 K at 0.17 A/10 V, guiding PCB copper area requirements.

Applications

Industrial Sensor Interface

Low-Power Load Switch

Use Scenario: Isolating analog sensor supply rails from shared system power to reduce noise coupling in 4–20 mA transmitter modules.

IC Role / Device Role / Timing Role: Low-side switch controlling 3.3 V bias to op-amp front-end stages; duty cycle <5% with 10 µs on-time.

Use Value: Logic-compatible turn-on eliminates level shifter; R_DS(on) <6 Ω keeps voltage drop <1 mV at 170 µA quiescent current.

Use Scenario: Enabling/disabling power to Bluetooth LE peripheral ICs in battery-powered IoT nodes during sleep/wake cycles.

IC Role / Device Role / Timing Role: High-side load switch driven by MCU GPIO; requires fast turn-off (t_f <40 ns) to minimize leakage during deep sleep.

Use Value: Q_g <2.5 nC enables sub-1 µs switching with 10 mA driver; V_GS(th) margin prevents accidental turn-on from digital crosstalk.

Relay Coil Snubber

Microcontroller-Level Signal Translation

Use Scenario: Absorbing back-EMF from 24 V DC relay coils during de-energization in PLC output modules.

IC Role / Device Role / Timing Role: Fast-recovery body diode clamps inductive kick; dv/dt rating prevents false triggering during 100 V/µs transients.

Use Value: t_rr = 21.7–32.5 ns and Q_rr = 10–15 nC limit voltage overshoot to <110 V, protecting downstream logic.

Use Scenario: Translating 1.8 V FPGA I/O signals to 5 V logic thresholds in mixed-voltage board interconnects.

IC Role / Device Role / Timing Role: Level-shifting pass transistor configured as source follower; gate driven by 1.8 V, source output referenced to 5 V rail.

Use Value: Low V_GS(th) ensures conduction onset below 2 V; g_fs = 0.08–0.17 S maintains gain >0.8 across 100 µA–0.13 A range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ V_GS=4.5 V; higher g_fs (0.25 S); C_iss = 100 pF - larger gate charge (3.2 nC).	Better for 4.5 V drive systems; less suitable for 3.3 V margin-limited designs due to higher V_GS(th) (1.5–2.5 V).	Prefer when gate drive strength exceeds 10 mA and layout allows extra 15 pF capacitance.
NDS355AN	R_DS(on) = 3.0 Ω @ V_GS=10 V; lower V_GS(th) (1.0–2.0 V); no dv/dt rating specified; R_thJA = 200 K/W.	Higher thermal efficiency but unverified dv/dt immunity - avoid in relay/snubber roles with fast edge rates.	Select only for static low-power switching where transient immunity is not required and PCB copper area is constrained.

Compared with DMN2004LK-7 and NDS355AN, BSS119 uniquely balances 3.3 V logic compatibility, documented 6 kV/µs dv/dt ruggedness, and SOT23 thermal limits - making it optimal for noise-sensitive industrial interfaces where reliability under fast transients is non-negotiable.

Availability

BSS119 is available at Aetrix Electronics and suitable for industrial sensor interfaces, low-power load switching, relay coil snubbing, and microcontroller-level signal translation requiring stable component supply and long-term manufacturability.

Supply support for BSS119 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

BSS119 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for logic-compatible switching in space-constrained industrial and automation equipment where dv/dt immunity and thermal predictability are critical.

FAQ

Is BSS119 suitable for 3.3 V microcontroller GPIO direct drive?

Yes. With V_GS(th) of 1.3–2.3 V and gate plateau voltage of 3.4 V, BSS119 achieves full enhancement using standard 3.3 V CMOS outputs. Measured R_DS(on) remains ≤6 Ω at V_GS = 3.3 V and I_D = 100 mA, confirmed in Figure 6 of the datasheet.

What is the maximum safe continuous drain current at 70°C ambient?

At T_A = 70°C, the absolute maximum continuous drain current is 0.13 A, as specified in the "Maximum Ratings" table. This reflects thermal derating from 0.17 A at 25°C due to R_thJA = 350 K/W and P_tot limit of 0.36 W.

Does BSS119 have avalanche rating or repetitive UIS capability?

No. The datasheet does not specify single-pulse or repetitive unclamped inductive switching (UIS) ratings, nor avalanche energy (E_AS). It is not characterized for avalanche operation; designers must ensure all inductive energy is dissipated externally via snubbers or freewheeling paths.

Can BSS119 replace BSS138 in existing designs?

Only with verification. BSS138 has lower R_DS(on) (3.5 Ω) but higher V_GS(th) (0.8–1.5 V) and no dv/dt rating. BSS119 offers superior transient immunity but higher on-resistance at low V_GS; layout and drive strength must be re-evaluated for timing and loss.

BSS119 E7796 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119 E7796 FAQ

1.How can I place an order for BSS119 E7796 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119 E7796 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119 E7796 reliable?

The price and inventory of BSS119 E7796 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119 E7796 is usually 5 days.

3.What payment methods are accepted for BSS119 E7796?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119 E7796 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119 E7796?

BSS119 E7796 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119 E7796 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119 E7796?

For technical support, including BSS119 E7796 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119 E7796 requirements.

6.How does Aetrix verify that BSS119 E7796 is sourced from the original manufacturer or authorized distributors?

All BSS119 E7796 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119 E7796 meets industry standards.

7.What is the process for return or replacement of BSS119 E7796?

All BSS119 E7796 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119 E7796, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119 E7796 part is unused and in its original packaging.

Return procedure for BSS119 E7796:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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