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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119 E7978

Name: BSS119 E7978
Brand: Infineon Technologies
SKU: BSS119 E7978
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119 E7978

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119 E7978.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS119 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET with 100 V V_DS, 3.4 Ω typical R_DS(on) at V_GS = 10 V and I_D = 0.17 A, 6 kV/µs dv/dt rating, and PG-SOT23 package. It serves as a low-power switching element in compact DC-DC converters and LED driver control stages.

For engineers reviewing the BSS119 datasheet, BSS119 pinout, BSS119 application, or BSS119 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.3–2.3 V), pulsed current capability (I_D(puls) = 0.68 A), thermal resistance (R_thJA = 350 K/W), and reverse diode recovery performance (t_rr = 21.7–32.5 ns).

Technical Context

This MOSFET operates in enhancement mode with a threshold voltage range of 1.3–2.3 V, enabling direct interface with 3.3 V and 5 V logic controllers without level-shifting. Its dv/dt immunity of 6 kV/µs supports robust operation in noisy switching environments such as flyback snubber circuits and relay drivers.

Dynamic parameters include C_iss = 60–78 pF, C_oss = 8.6–11.2 pF, and Q_g = 1.67–2.5 nC, indicating fast switching with moderate gate drive requirements. The integrated body diode exhibits V_SD = 0.8–1.2 V and Q_rr = 10–15 nC, suitable for non-synchronous rectification in low-current SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC with margin for transient spikes in industrial power supplies.
R_DS(on) @ V_GS = 10 V	3.4–6 Ω - Enables <170 mW conduction loss at 0.17 A continuous drain current in SOT23 footprint.
I_D (continuous)	0.17 A @ T_A = 25 °C - Rated for low-duty-cycle signal switching and biasing applications, not high-current loads.
Q_g	1.67–2.5 nC - Compatible with microcontroller GPIOs driving ≤10 mA peak gate current via 6 Ω series resistor.
t_r/t_f	3.1–4.6 ns / 27–40 ns - Fast turn-on but relatively slow turn-off due to low transconductance (g_fs = 0.08–0.17 S), limiting high-frequency PWM use.
V_GS(th)	1.3–2.3 V - Ensures reliable turn-on with standard 3.3 V logic; avoids partial enhancement in marginal drive conditions.
t_rr	21.7–32.5 ns - Allows operation in 1–2 MHz discontinuous-mode converters where body diode conduction occurs briefly.

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, lead-free, tape-and-reel (3000 pcs/reel). Marking: sSH.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts logic-level voltage (≥3.4 V plateau) to fully enhance channel; requires ESD protection per IEC 61000-4-2.
2 (Source)	Reference node	Common return path for load current and gate drive loop; must be routed with low inductance to minimize ringing.
3 (Drain)	Power output terminal	Connects to switched load or high-side rail; handles 100 V blocking and 0.68 A pulsed current with safe operating area compliance.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced from 3.3 V or 5 V MCU outputs without external level shifters.
dv/dt rated	Withstands 6 kV/µs voltage transients-critical for reliability in inductive load switching and relay coil suppression.
Low gate charge	Q_g ≤ 2.5 nC reduces switching losses and enables efficient operation at ≥500 kHz in low-power topologies.
Integrated body diode	V_SD ≤ 1.2 V and t_rr ≤ 32.5 ns support non-synchronous flyback and buck converter freewheeling paths.
SIPMOS™ technology	Optimized for low R_DS(on)/area ratio in SOT23, delivering higher current density than standard planar MOSFETs.

Applications

LED Driver Control

Low-Power DC-DC Enable Switch

Use Scenario: Switching current to indicator LEDs or backlight segments in portable instrumentation.

IC Role / Device Role / Timing Role: Low-side load switch controlled by microcontroller GPIO with minimal external components.

Use Value: Logic-level turn-on eliminates need for driver transistor; 0.17 A rating matches typical LED string currents.

Use Scenario: Enabling/disabling auxiliary 3.3 V or 5 V LDO outputs in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: High-side or low-side power path switch activated during sleep/wake transitions.

Use Value: Low R_DS(on) limits dropout to <1 mV at 100 mA, preserving regulation accuracy and efficiency.

Relay Coil Driver

Flyback Snubber Switch

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and HVAC controls.

IC Role / Device Role / Timing Role: Low-side switch absorbing inductive kickback via internal diode and dv/dt immunity.

Use Value: 6 kV/µs dv/dt rating prevents false triggering during relay de-energization transients.

Use Scenario: Active clamping in low-power flyback converters (<5 W) for AC-DC adapters.

IC Role / Device Role / Timing Role: Snubber switch synchronizing with primary MOSFET to recycle leakage energy.

Use Value: Fast t_r (≤4.6 ns) and low Q_gd (0.76–1.1 nC) enable precise timing alignment with main switch.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 2.8 Ω @ V_GS = 4.5 V; lower V_GS(th) (0.5–1.2 V); no dv/dt rating specified.	Better suited for 1.8 V–3.3 V logic systems; lacks documented noise immunity for relay/snubber use.	Prefer when gate drive voltage is ≤3.3 V and dv/dt stress is absent.
BS170	V_DS = 60 V; R_DS(on) = 5 Ω @ V_GS = 10 V; no dv/dt or Q_rr specs; obsolete in many lines.	Limited to ≤50 V rails; unsuitable for 100 V transient-tolerant designs or fast-recovery requirements.	Only consider for legacy replacement where voltage margin and diode recovery are non-critical.

Compared with DMN2004LK-7 and BS170, BSS119 uniquely combines 100 V rating, verified 6 kV/µs dv/dt immunity, and characterized reverse recovery-making it the only option among the three qualified for noise-prone industrial switching and active snubbers.

Availability

BSS119 is available at Aetrix Electronics and suitable for LED driver control, low-power DC-DC enable switching, and relay coil driving requiring stable component supply across industrial and embedded design cycles.

Supply support for BSS119 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions.

The BSS119 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, designed specifically for space-constrained, logic-driven switching in industrial automation, consumer power supplies, and sensor interface circuits.

FAQ

Is BSS119 suitable for high-frequency PWM applications above 1 MHz?

No. While its turn-on delay is short (≤4 ns), the relatively slow fall time (27–40 ns) and low transconductance (0.08–0.17 S) limit practical switching frequency to ≤500 kHz in thermally constrained SOT23 layouts. Higher frequencies risk excessive switching losses and thermal runaway.

Can BSS119 replace BS170 in existing designs?

Yes, with voltage derating: BSS119's 100 V V_DS exceeds BS170's 60 V rating, and its logic-level threshold improves gate drive margin. However, verify layout thermal relief-BSS119's R_thJA = 350 K/W requires copper pour for >100 mA continuous operation.

Does BSS119 require external gate resistors for ESD protection?

Yes. Although rated for IEC 61000-4-2 Level 2 (4 kV contact), the gate oxide is vulnerable to static discharge. A 10–100 Ω series resistor near the gate pin is recommended to dampen ringing and limit peak current during fast edge transitions.

What is the maximum safe operating temperature for continuous 0.17 A drain current?

At ambient temperature T_A = 70 °C, the datasheet specifies I_D = 0.13 A continuous. To sustain 0.17 A continuously, ambient must be ≤25 °C with PCB copper pour reducing effective R_thJA; junction temperature will reach ~125 °C under those conditions.

BSS119 E7978 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119 E7978 FAQ

1.How can I place an order for BSS119 E7978 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119 E7978 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119 E7978 reliable?

The price and inventory of BSS119 E7978 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119 E7978 is usually 5 days.

3.What payment methods are accepted for BSS119 E7978?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119 E7978 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119 E7978?

BSS119 E7978 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119 E7978 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119 E7978?

For technical support, including BSS119 E7978 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119 E7978 requirements.

6.How does Aetrix verify that BSS119 E7978 is sourced from the original manufacturer or authorized distributors?

All BSS119 E7978 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119 E7978 meets industry standards.

7.What is the process for return or replacement of BSS119 E7978?

All BSS119 E7978 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119 E7978, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119 E7978 part is unused and in its original packaging.

Return procedure for BSS119 E7978:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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