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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119L6327HTSA1

Name: BSS119L6327HTSA1
Brand: Infineon Technologies
SKU: BSS119L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119L6327HTSA1.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

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Product details

Overview

BSS119L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET in PG-SOT23 package, rated for 100 V V_DS, 6 Ω R_DS(on) at V_GS = 10 V / I_D = 0.17 A, and 0.36 W power dissipation at T_A = 25 °C. It serves as a low-current switching element in space-constrained DC-DC bias rails, LED drivers, and load-switching circuits requiring dv/dt robustness.

For engineers reviewing the BSS119L6327HTSA1 datasheet, BSS119L6327HTSA1 pinout, BSS119L6327HTSA1 application, or BSS119L6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.3–2.3 V), 6 kV/µs dv/dt rating, reverse diode recovery performance (t_rr = 21.7–32.5 ns), and thermal resistance (R_thJA = 350 K/W).

Technical Context

This MOSFET employs Infineon's SIPMOS™ trench technology optimized for low gate charge (Q_g = 1.67–2.5 nC) and fast switching (t_d(on) = 2.7–4 ns, t_f = 27–40 ns). Its logic-level threshold enables direct interface with 3.3 V and 5 V microcontroller GPIOs without level-shifting circuitry.

The integrated body diode exhibits V_SD = 0.8–1.2 V at I_S = 0.17 A and t_rr = 21.7–32.5 ns under defined conditions (V_R = 50 V, dI_F/dt = 100 A/µs), supporting moderate-frequency freewheeling in low-power SMPS and motor control feedback paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports input rails up to 80 V DC with margin for transient spikes
R_DS(on)	3.4–6 Ω at V_GS = 10 V / I_D = 0.17 A - determines conduction loss in low-current (<200 mA) switching paths
V_GS(th)	1.3–2.3 V - ensures reliable turn-on with standard 3.3 V logic outputs
Q_g	1.67–2.5 nC - enables fast switching with low gate driver current demand (e.g., <1 mA average at 1 MHz)
t_rr	21.7–32.5 ns - limits reverse recovery energy loss in discontinuous conduction mode (DCM) converters
dv/dt rating	6 kV/µs - suppresses false turn-on during high-slew-rate voltage transients in noisy environments
P_tot	0.36 W at T_A = 25 °C - defines maximum continuous power handling on minimal PCB footprint

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with exposed drain pad for thermal relief. Marking: "sSH". RoHS-compliant, Pb-free, supplied in tape-and-reel (L6327: 3000 pcs/reel).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; requires ≤20 V absolute max rating
2 (Source)	Reference node	Common return path for load current; tied to ground or low-side reference in most configurations
3 (Drain)	Power output terminal	Connects to switched load or supply rail; electrically connected to exposed pad for thermal conduction

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.3 V enables direct MCU GPIO control without external level shifters
dv/dt ruggedness	6 kV/µs rating prevents spurious turn-on during fast voltage transients in industrial interfaces
Low gate charge	Q_g ≤ 2.5 nC reduces switching losses and eases gate driver design at >500 kHz frequencies
Integrated body diode	V_SD ≤ 1.2 V and t_rr ≤ 32.5 ns support efficient freewheeling in low-power flyback and buck converters
Thermal robustness	R_thJA = 350 K/W allows operation up to +150 °C junction temperature with minimal copper area

Applications

LED Bias Control

Microcontroller I/O Protection

Use Scenario: Constant-current biasing of indicator LEDs in automotive instrument clusters and industrial HMIs.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-ground current path with precise on/off timing.

Use Value: Logic-level V_GS(th) ensures full turn-on from 3.3 V MCU pins; low R_DS(on) minimizes voltage drop across series resistor.

Use Scenario: Isolating sensitive MCU GPIOs from external sensors or actuators subject to ESD or overvoltage events.

IC Role / Device Role / Timing Role: Bidirectional protection switch placed between MCU pin and external connector.

Use Value: Fast t_f ≤ 40 ns and dv/dt rating prevent latch-up during transient coupling; body diode clamps negative excursions.

Low-Power DC-DC Enable

Small-Signal Load Switching

Use Scenario: Enabling/disabling auxiliary 5 V or 3.3 V LDO outputs in portable medical devices based on system sleep state.

IC Role / Device Role / Timing Role: High-side or low-side enable switch in power sequencing chain.

Use Value: 0.17 A continuous rating matches typical LDO quiescent + load currents; Q_g < 2.5 nC enables clean enable edge without overshoot.

Use Scenario: Power gating of peripheral ICs (e.g., sensors, transceivers) in battery-powered IoT nodes to minimize standby leakage.

IC Role / Device Role / Timing Role: Low-leakage load switch inserted between battery and peripheral V_CC rail.

Use Value: I_DSS ≤ 0.1 µA at 25 °C and ≤ 0.5 µA at 150 °C ensures sub-1 µA shutdown current per switch.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BSS123LT1G	V_DS = 100 V, R_DS(on) = 5–7.5 Ω at V_GS = 10 V, Q_g = 2.8 nC - higher gate charge and wider R_DS(on) spread	Less suitable for high-frequency (>1 MHz) switching due to slower t_f (50 ns typ) and higher Q_g	Select when cost sensitivity outweighs switching speed requirements and tighter R_DS(on) tolerance is acceptable
DMN2004LK-7	V_DS = 20 V, R_DS(on) = 2.2 Ω at V_GS = 4.5 V - lower voltage rating but lower on-resistance and faster switching	Not usable in 48 V or higher input systems; better for 3.3/5 V rail switching only	Choose for ultra-low-loss 5 V load switching where input voltage never exceeds 20 V

Compared with BSS123LT1G and DMN2004LK-7, BSS119L6327HTSA1 uniquely balances 100 V capability, logic-level drive, and 6 kV/µs dv/dt immunity-making it optimal for industrial sensor interfaces and mixed-voltage power management where reliability under electrical stress is critical.

Availability

BSS119L6327HTSA1 is available at Aetrix Electronics and suitable for LED bias control, microcontroller I/O protection, and low-power DC-DC enable applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSS119L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification (CECC-approved).

The SIPMOS™ small-signal transistor product line targets space-constrained, high-reliability switching applications in industrial automation, automotive subsystems, and consumer electronics where logic-level drive and transient immunity are essential.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The BSS119L6327HTSA1 supports 0.13 A continuous drain current at T_A = 70 °C, derated from 0.17 A at 25 °C per its thermal characteristics curve. This reflects junction-to-ambient thermal resistance of 350 K/W and power dissipation limit of 0.36 W at 25 °C.

Does this MOSFET have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic body diode with forward voltage V_SD = 0.8–1.2 V at I_S = 0.17 A and reverse recovery time t_rr = 21.7–32.5 ns under specified test conditions (V_R = 50 V, dI_F/dt = 100 A/µs). These values are measured at T_j = 25 °C.

Can BSS119L6327HTSA1 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage V_GS(th) ranges from 1.3 V to 2.3 V, and R_DS(on) is fully specified at V_GS = 4.5 V (4.9–10 Ω) and V_GS = 10 V (3.4–6 Ω). At 3.3 V, it operates in linear region with partial conduction, sufficient for low-current loads like LEDs or enable signals.

What does the "L6327" suffix indicate in the part number?

The "L6327" suffix denotes Infineon's standard tape-and-reel packaging configuration: 3000 units per reel, Pb-free, compliant with RoHS Directive 2011/65/EU. It is not a functional variant - electrical and thermal specifications match the base BSS119 device.

BSS119L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119L6327HTSA1 FAQ

1.How can I place an order for BSS119L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119L6327HTSA1 reliable?

The price and inventory of BSS119L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS119L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119L6327HTSA1?

BSS119L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119L6327HTSA1?

For technical support, including BSS119L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119L6327HTSA1 requirements.

6.How does Aetrix verify that BSS119L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS119L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS119L6327HTSA1?

All BSS119L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS119L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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