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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119L6433HTMA1

Name: BSS119L6433HTMA1
Brand: Infineon Technologies
SKU: BSS119L6433HTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119L6433HTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119L6433HTMA1.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

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Product details

Overview

BSS119L6433HTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal MOSFET in PG-SOT23 package, rated for 100 V V_DS, 6 Ω R_DS(on) at V_GS = 10 V and I_D = 0.17 A, and dv/dt rated to 6 kV/µs - used in low-power load switching and signal-level interface circuits in industrial sensor modules and portable power management.

For engineers reviewing the BSS119L6433HTMA1 datasheet, BSS119L6433HTMA1 pinout, BSS119L6433HTMA1 application, or BSS119L6433HTMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.3–2.3 V), low R_DS(on) at 4.5 V (4.9 Ω typ), reverse diode recovery time (21.7–32.5 ns), and thermal resistance (350 K/W junction-to-ambient).

Technical Context

This device operates as a single N-channel enhancement-mode MOSFET with integrated body diode, designed for low-voltage logic-compatible switching where gate drive voltage is constrained to 3.3 V or 5 V systems. Its dv/dt rating ensures robustness against fast transient voltage spikes in inductive load environments.

Electrical behavior is defined by gate threshold voltage (1.3–2.3 V), on-resistance sensitivity to temperature (R_DS(on) increases ~20% from 25 °C to 150 °C), and dynamic parameters including C_iss (60–78 pF), Q_g (1.67–2.5 nC), and t_r/t_f (3.1–4.6 ns / 27–40 ns) under standardized test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports operation across 24 V industrial rails and 48 V telecom backup supplies without breakdown.
R_DS(on) @ V_GS=10 V	3.4–6 Ω - enables <170 mW conduction loss at 0.17 A DC current in compact SOT23 footprint.
V_GS(th)	1.3–2.3 V - ensures reliable turn-on with 3.3 V microcontroller GPIOs without level-shifting.
I_D continuous @ T_A=25°C	0.17 A - suitable for driving LEDs, small relays, or bias networks in space-constrained PCB layouts.
dv/dt rating	6 kV/µs - suppresses false triggering during fast voltage transients in motor control feedback paths.
t_r/t_f	3.1–4.6 ns / 27–40 ns - balances switching speed and EMI in low-noise signal routing applications.
Q_g	1.67–2.5 nC - allows efficient gate driving with sub-10 mA peak current from standard logic buffers.

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with exposed drain pad for thermal relief. Marking "sSH" per datasheet.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level input (0–10 V); high-impedance node requiring minimal drive current.
Pin 2	Source	Reference node for gate drive; tied to system ground or low-side return path in common-source configuration.
Pin 3	Drain	Switched output terminal; connects to load anode or inductive element; thermally coupled to package backside.

Key Features

Feature	Design Value
N-channel enhancement mode	Ensures zero conduction when gate is un-driven - critical for fail-safe power sequencing in battery-backed systems.
Logic-level gate threshold	V_GS(th) ≤ 2.3 V guarantees full enhancement using 3.3 V FPGA I/O or MCU pins without external level shifters.
dv/dt rated	Withstands 6 kV/µs voltage slew rates - prevents spurious turn-on in noisy motor driver or relay coil snubber circuits.
Integrated body diode	Reverse recovery time 21.7–32.5 ns and Q_rr 10–15 nC support bidirectional current handling in H-bridge half-cycle freewheeling.
Pb-free & RoHS-compliant	Meets EU Directive 2011/65/EU; marking "L6433HTMA1" indicates lead-free tape-and-reel packaging (3000 pcs/reel).

Applications

LED Driver Switching

Low-Voltage Sensor Interface

Use Scenario: Driving discrete indicator LEDs or segmented displays in industrial HMIs with 3.3 V microcontrollers.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode current path; operates in linear or saturated mode depending on forward voltage.

Use Value: Sub-200 mW power dissipation at 0.17 A avoids thermal derating in sealed enclosures; logic-level gate eliminates need for driver IC.

Use Scenario: Isolating analog sensor outputs (e.g., thermistor bridges or current-sense shunts) from shared MCU ADC inputs.

IC Role / Device Role / Timing Role: Signal-path multiplexer switch enabling sequential sampling of multiple sensors via single ADC channel.

Use Value: Low R_DS(on) (≤6 Ω) introduces <0.1% gain error at 10 kΩ source impedance; fast turn-off (<40 ns) minimizes crosstalk between channels.

Power Sequencing Control

Relay Coil Driver

Use Scenario: Enabling/disabling auxiliary power rails (e.g., 5 V or 3.3 V LDO inputs) during cold-start or fault recovery sequences.

IC Role / Device Role / Timing Role: High-side or low-side enable switch placed upstream of voltage regulators; controlled by sequencer GPIO.

Use Value: Guaranteed turn-on at 3.3 V ensures deterministic startup timing; 100 V rating accommodates input surges up to ±40 V without clamping.

Use Scenario: Driving 12 V/24 V electromagnetic relays in programmable logic controllers (PLCs) and building automation panels.

IC Role / Device Role / Timing Role: Low-side driver for relay coil; body diode provides freewheeling path during de-energization.

Use Value: dv/dt rating prevents false re-triggering from coil flyback spikes; 0.68 A pulsed current handles relay inrush without secondary protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ V_GS=4.5 V (lower), but V_DS = 20 V (significantly lower); SOT-23 package same pinout.	Not suitable for 100 V bus monitoring or 48 V telecom applications due to voltage limitation.	Select only if operating voltage stays ≤20 V and lower on-resistance is prioritized over voltage margin.
BS170	V_GS(th) = 0.8–3.0 V (wider spread); R_DS(on) = 5–10 Ω @ V_GS=10 V; same SOT-23 package but non-logic-level optimized.	Higher gate threshold variation risks inconsistent turn-on in 3.3 V systems; slower switching (t_f > 60 ns).	Acceptable only in cost-sensitive, non-critical 5 V designs where gate drive margin exceeds 2 V.

Compared with DMN2004LK-7 and BS170, BSS119L6433HTMA1 uniquely combines 100 V rating, guaranteed logic-level turn-on (≤2.3 V), and dv/dt immunity - making it the only option among the three for robust 24–48 V industrial switching with 3.3 V control.

Availability

BSS119L6433HTMA1 is available at Aetrix Electronics and suitable for LED driver switching, low-voltage sensor interface, and power sequencing control requiring stable component supply and long-term manufacturability.

Supply support for BSS119L6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification (CECC approved).

BSS119 belongs to Infineon's SIPMOS small-signal transistor product line, engineered for reliable low-power switching in space-constrained, logic-driven applications such as sensor nodes and portable instrumentation.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The BSS119L6433HTMA1 supports 0.13 A continuous drain current at T_A = 70°C, derated from 0.17 A at 25°C per its thermal resistance profile and power dissipation limit of 0.36 W. This reflects junction-to-ambient thermal performance under minimal PCB copper footprint.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 3.1–4.1 pF) and PCB trace inductance, especially when driven by fast digital outputs. No internal gate resistance is present; external control ensures reliable switching edge control.

Can BSS119L6433HTMA1 be used in high-frequency PWM applications?

Yes - with t_r = 3.1–4.6 ns and t_f = 27–40 ns, it supports PWM frequencies up to ~5 MHz in low-duty-cycle, low-current (<0.1 A) signal modulation. However, switching losses rise significantly above 1 MHz due to Q_g = 1.67–2.5 nC and must be evaluated per thermal design.

Is the body diode suitable for reverse current conduction?

Yes - the integrated body diode has V_SD = 0.8–1.2 V at I_F = 0.17 A and t_rr = 21.7–32.5 ns, making it appropriate for freewheeling in low-energy inductive loads like relays or solenoids, but not for high-frequency synchronous rectification.

BSS119L6433HTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119L6433HTMA1 FAQ

1.How can I place an order for BSS119L6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119L6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119L6433HTMA1 reliable?

The price and inventory of BSS119L6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119L6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BSS119L6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119L6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119L6433HTMA1?

BSS119L6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119L6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119L6433HTMA1?

For technical support, including BSS119L6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119L6433HTMA1 requirements.

6.How does Aetrix verify that BSS119L6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BSS119L6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119L6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BSS119L6433HTMA1?

All BSS119L6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119L6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119L6433HTMA1 part is unused and in its original packaging.

Return procedure for BSS119L6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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