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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119NH6433XTMA1

Name: BSS119NH6433XTMA1
Brand: Infineon Technologies
SKU: BSS119NH6433XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119NH6433XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119NH6433XTMA1.pdf

Description:: MOSFET N-CH 100V 190MA SOT23-3

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Product details

Overview

BSS119NH6433XTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET rated for 100 V V_DS, 190 mA continuous drain current, and 1.4 Ω R_DS(on) at V_GS = 10 V, housed in a SOT-23-3 surface-mount package. It serves as a low-power switching device in load management, LED biasing, and signal-level power control circuits.

For engineers reviewing the BSS119NH6433XTMA1 datasheet, BSS119NH6433XTMA1 pinout, BSS119NH6433XTMA1 application, or BSS119NH6433XTMA1 equivalent, key selection criteria include its 100 V blocking capability, low gate threshold (V_GS(th) = 1.0–2.5 V), and guaranteed 190 mA I_D rating under standard thermal conditions.

Technical Context

This discrete MOSFET employs planar silicon technology with optimized channel geometry for stable operation in linear and switching modes. Its gate oxide design ensures robust ESD tolerance (HBM > 2 kV) and repeatable turn-on behavior across temperature.

The device features a fully characterized safe operating area (SOA) up to T_j = 150 °C and supports pulsed drain currents up to 600 mA. Thermal resistance R_thJA is specified at 350 K/W under standard PCB layout conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source voltage before avalanche breakdown; enables use in 48 V industrial bus and PoE-powered subsystems.
I_D (continuous)	190 mA - Guaranteed DC current handling at T_A = 25 °C with derating above 25 °C; sufficient for sensor biasing and logic-level load switching.
R_DS(on)	1.4 Ω @ V_GS = 10 V - On-resistance determines conduction loss in low-current switching paths; measured with 10 V gate drive.
V_GS(th)	1.0–2.5 V - Gate threshold range ensures reliable turn-on with 3.3 V or 5 V logic drivers without level-shifting.
P_D	360 mW - Maximum power dissipation at T_A = 25 °C; defines thermal limits for PCB trace width and copper pour requirements.
C_iss	35 pF - Input capacitance affects gate drive energy and switching speed; relevant for high-frequency PWM dimming applications.

Pinout & Package

Package: SOT-23-3 (TO-236-3), plastic surface-mount package with gull-wing leads, JEDEC MO-203-AB compliant, footprint compatible with standard SOT-23 land pattern.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive voltage; requires <2.5 V to ensure full turn-off and >3.3 V for reliable saturation.
2 (Source)	Reference node	Common return path for source current; must be connected to system ground or local reference plane.
3 (Drain)	Power output node	Connects to load or supply rail; carries switched current and sustains 100 V potential during off-state.

Key Features

Feature	Design Value
Low gate threshold voltage	Enables direct interface with 3.3 V microcontrollers without gate driver ICs.
Guaranteed avalanche energy rating	Supports inductive load switching with flyback protection; E_AS = 20 mJ tested per JEDEC JESD24-11.
Lead-free and RoHS-compliant	Meets EU Directive 2011/65/EU; suitable for consumer and industrial products requiring environmental compliance.
Qualified per AEC-Q101	Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling tests.

Applications

LED Bias Control

Sensor Power Switching

Use Scenario: Constant-current biasing of indicator LEDs in automotive instrument clusters and industrial HMIs.

IC Role / Device Role / Timing Role: Low-side switch regulating current through LED anode-to-V_CC path.

Use Value: 190 mA rating and 1.4 Ω R_DS(on) minimize voltage drop and self-heating at 20 mA typical drive current.

Use Scenario: Enabling/disabling analog sensor modules (e.g., pressure, temperature) during sleep cycles.

IC Role / Device Role / Timing Role: High-side or low-side power gate controlling V_DD supply to sensor ICs.

Use Value: Sub-2.5 V V_GS(th) allows clean turn-off using MCU GPIO in deep-sleep mode with leakage <1 µA.

Logic-Level Load Switch

USB Port Power Management

Use Scenario: Isolating peripheral loads (e.g., buzzer, small relay coil) from main logic rails in embedded controllers.

IC Role / Device Role / Timing Role: Low-side switching element controlled by 3.3 V GPIO with minimal external components.

Use Value: 100 V V_DS provides margin against inductive kickback; SOA supports 600 mA pulsed current for relay coil energization.

Use Scenario: USB 2.0 downstream port power enable/disable in host controllers and hubs.

IC Role / Device Role / Timing Role: Current-limited power switch placed between VBUS and downstream device input.

Use Value: 190 mA I_D rating aligns with USB 2.0 unit load (100 mA); R_DS(on) contributes <150 mV drop at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage, low-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS10200LT1G	V_DS = 100 V, I_D = 200 mA, R_DS(on) = 1.5 Ω @ 10 V, V_GS(th) = 1.0–2.2 V	Identical SOT-23-3 footprint and functional role; slightly higher R_DS(on) increases conduction loss by ~7%.	Preferred where second-source qualification is required and minor efficiency trade-off is acceptable.
STMicroelectronics STS1DNF30L	V_DS = 30 V, I_D = 300 mA, R_DS(on) = 1.2 Ω @ 10 V, V_GS(th) = 0.5–1.3 V	Limited to ≤30 V systems; lower V_GS(th) improves compatibility with ultra-low-voltage MCUs but reduces voltage headroom.	Select only for 3.3 V or 5 V-only applications where 100 V rating is unnecessary.

Compared with NSS10200LT1G and STS1DNF30L, BSS119NH6433XTMA1 offers optimal balance of 100 V capability, 190 mA current rating, and 3.3 V logic compatibility-making it uniquely suited for mixed-voltage industrial and automotive subsystems requiring both safety margin and low-power drive.

Availability

BSS119NH6433XTMA1 is available at Aetrix Electronics and suitable for LED bias control, sensor power switching, and logic-level load switching requiring stable component supply and long-term manufacturability.

Supply support for BSS119NH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BSS119NH6433XTMA1 belongs to Infineon's OptiMOS™ 2N family, designed specifically for high-efficiency, low-power switching in space-constrained applications such as portable instrumentation and automotive body electronics.

FAQ

What is the maximum junction temperature for BSS119NH6433XTMA1?

The absolute maximum junction temperature is 150 °C, validated per JEDEC JESD78. Operation above this limit risks permanent degradation of gate oxide integrity and threshold voltage shift. Derating curves in the official datasheet define allowable I_D versus ambient temperature for sustained reliability.

Can BSS119NH6433XTMA1 be used in linear (analog) mode?

Yes-it is characterized for linear operation with defined SOA boundaries up to 150 °C junction temperature. The device supports continuous DC operation within the SOA envelope, making it suitable for precision current regulation and active load applications when properly heatsinked.

Is BSS119NH6433XTMA1 qualified for automotive applications?

Yes-this part is AEC-Q101 qualified and manufactured in Infineon's certified automotive production lines. It meets stress test requirements including HTGB (1000 h at 150 °C), HTRB (1000 h at 150 °C, 100% V_DS), and temperature cycling (1000 cycles, −40 °C to +125 °C).

Does BSS119NH6433XTMA1 require a gate resistor for switching?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing and control dV/dt during fast transitions. While not mandatory for basic on/off operation, it prevents unintended oscillation and reduces EMI in PCB layouts with long gate traces or high-speed MCU outputs.

BSS119NH6433XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 20.9 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23-3

BSS119NH6433XTMA1 FAQ

1.How can I place an order for BSS119NH6433XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119NH6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119NH6433XTMA1 reliable?

The price and inventory of BSS119NH6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119NH6433XTMA1 is usually 5 days.

3.What payment methods are accepted for BSS119NH6433XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119NH6433XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119NH6433XTMA1?

BSS119NH6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119NH6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119NH6433XTMA1?

For technical support, including BSS119NH6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119NH6433XTMA1 requirements.

6.How does Aetrix verify that BSS119NH6433XTMA1 is sourced from the original manufacturer or authorized distributors?

All BSS119NH6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119NH6433XTMA1 meets industry standards.

7.What is the process for return or replacement of BSS119NH6433XTMA1?

All BSS119NH6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119NH6433XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119NH6433XTMA1 part is unused and in its original packaging.

Return procedure for BSS119NH6433XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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