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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS123E6327

Name: BSS123E6327
Brand: Infineon Technologies
SKU: BSS123E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123E6327.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS123E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal MOSFET rated for 100 V drain-source voltage, 0.17 A continuous drain current, and 6 Ω R_DS(on) at V_GS = 10 V. It features a low gate threshold voltage (0.8–2.0 V), SOT-23 package, and is used in low-power load switching, LED drivers, and level-shifted gate control circuits.

For engineers reviewing the BSS123E6327 datasheet, BSS123E6327 pinout, BSS123E6327 application, or BSS123E6327 equivalent, key selection criteria include its logic-level drive compatibility, thermal resistance (R_thJA ≤ 350 K/W), integrated body diode characteristics, and safe operating area under pulsed conditions.

Technical Context

This MOSFET operates in enhancement mode with a silicon-based SIPMOS structure optimized for fast switching and low gate charge. Its logic-level gate enables direct interfacing with 3.3 V and 5 V microcontrollers without external level-shifting circuitry.

The device integrates a monolithic body diode with V_SD = 0.85–1.3 V at I_F = 0.34 A and supports pulsed drain currents up to 0.68 A. Thermal performance is defined for mounting on a 15 mm × 16.7 mm × 0.7 mm aluminum substrate.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports operation in 24 V and 48 V industrial bus systems with margin
I_D (continuous)	0.17 A at T_A = 28 °C - suitable for low-current signal-path switching
R_DS(on)	6 Ω max at V_GS = 10 V - ensures <100 mW conduction loss at 0.1 A
V_GS(th)	0.8–2.0 V - guarantees turn-on with standard logic outputs (3.3 V/5 V)
C_iss	65–85 pF - enables nanosecond-scale switching with low gate drive power
T_j range	−55 to +150 °C - qualified for automotive under-hood and industrial ambient environments
P_tot	0.36 W at T_A = 25 °C - requires thermal derating above 25 °C per published curve

Pinout & Package

SOT-23 (TO-236) 3-pin surface-mount package with standard lead frame geometry and JEDEC-compliant footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts logic-level input; gate leakage ≤50 nA at 20 V
Pin 2 (S)	Source	Reference node for gate drive; tied to system ground in low-side switch configuration
Pin 3 (D)	Drain	High-side connection point; handles 100 V blocking and 0.68 A pulsed current

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 2.0 V, eliminating need for gate driver ICs in 3.3 V systems
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~13 % from −60 °C to +150 °C, enabling stable current sharing
Integrated body diode	Forward voltage 0.85–1.3 V at 0.34 A; supports freewheeling in inductive loads
ESD robustness	HBM Class 1 (≥2 kV), qualified per MIL-STD-883, reducing board-level protection needs

Applications

LED Driver Switching

Microcontroller I/O Expansion

Use Scenario: Driving discrete LEDs or LED strings in portable instrumentation panels with 3.3 V MCU GPIO.

IC Role / Device Role / Timing Role: Low-side switch controlling current path to LED anode; no external driver required.

Use Value: Enables direct GPIO control with <100 mW conduction loss and sub-10 ns turn-on delay.

Use Scenario: Expanding digital output capability of resource-constrained MCUs (e.g., STM32L0, MSP430) for peripheral enable/disable.

IC Role / Device Role / Timing Role: Signal-level load switch isolating subsystems during sleep or fault recovery.

Use Value: Provides clean, fast on/off control with <50 nA gate leakage preserving MCU sleep current budget.

Level-Shifting Interface

Low-Power Sensor Biasing

Use Scenario: Translating 3.3 V logic signals to control 12–24 V analog front-end modules in mixed-voltage sensor nodes.

IC Role / Device Role / Timing Role: Voltage-level translator using source-follower or common-drain configuration.

Use Value: Delivers rail-to-rail output swing with <8 ns rise time and minimal propagation delay.

Use Scenario: Providing programmable bias current to precision analog sensors (e.g., RTDs, bridge transducers) in battery-powered condition monitoring.

IC Role / Device Role / Timing Role: Constant-current sink controlled by PWM-modulated gate voltage.

Use Value: Achieves <±2% current accuracy over −40 to +85 °C using V_GS(th) stability and low R_DS(on) drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω max at V_GS = 4.5 V; higher g_fs (0.35 S); SOT-23 package	Better efficiency at 0.1–0.2 A but tighter V_GS(th) tolerance (0.5–1.2 V)	Preferred when lower conduction loss is critical and gate drive voltage is stable ≥4.5 V
2N7002K-T1-GE3	R_DS(on) = 5.5 Ω max at V_GS = 10 V; V_GS(th) = 1.0–2.5 V; same SOT-23 footprint	Higher V_GS(th) upper limit reduces risk of unintended turn-on in noisy environments	Chosen where noise immunity outweighs marginal R_DS(on) advantage

Compared with DMN2004LK-7 and 2N7002K-T1-GE3, BSS123E6327 offers the widest V_GS(th) range (0.8–2.0 V) and highest V_DS rating (100 V), making it optimal for 24–48 V systems requiring guaranteed logic-level turn-on across temperature and process variation.

Availability

BSS123E6327 is available at Aetrix Electronics and suitable for LED driver switching, microcontroller I/O expansion, and low-power sensor biasing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSS123E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.

The SIPMOS® small-signal transistor product line delivers high-reliability, logic-compatible MOSFETs optimized for space-constrained, low-power switching in industrial automation and portable equipment.

FAQ

Is BSS123E6327 suitable for 3.3 V microcontroller gate drive?

Yes. With a guaranteed V_GS(th) maximum of 2.0 V and full enhancement at V_GS ≥ 2.5 V, BSS123E6327 reliably switches on using standard 3.3 V GPIO outputs. R_DS(on) remains ≤6 Ω at V_GS = 3.3 V under typical conditions, ensuring low conduction loss without external level shifters.

What is the maximum pulsed drain current rating?

The absolute maximum pulsed drain current is 0.68 A, specified at T_A = 25 °C with pulse width ≤80 µs and duty cycle ≤1%. This rating assumes proper PCB thermal design (e.g., 15 mm × 16.7 mm copper pad) and accounts for SOA limitations at elevated V_DS.

Does BSS123E6327 include an integrated body diode?

Yes. It features a monolithic parasitic body diode with forward voltage V_SD = 0.85–1.3 V at I_F = 0.34 A and T_j = 25 °C. This diode supports freewheeling in inductive loads and reverse-polarity protection in low-side configurations.

How does thermal resistance vary with PCB layout?

R_thJA is specified ≤350 K/W for mounting on a 15 mm × 16.7 mm × 0.7 mm aluminum substrate. On standard FR-4 with 1 cm² 2-oz copper, measured R_thJA typically exceeds 420 K/W. Layout must include thermal vias and copper pour under the drain pad to approach datasheet-rated performance.

BSS123E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 69 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS123E6327 FAQ

1.How can I place an order for BSS123E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123E6327 reliable?

The price and inventory of BSS123E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123E6327 is usually 5 days.

3.What payment methods are accepted for BSS123E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123E6327?

BSS123E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123E6327?

For technical support, including BSS123E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123E6327 requirements.

6.How does Aetrix verify that BSS123E6327 is sourced from the original manufacturer or authorized distributors?

All BSS123E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123E6327 meets industry standards.

7.What is the process for return or replacement of BSS123E6327?

All BSS123E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123E6327 part is unused and in its original packaging.

Return procedure for BSS123E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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