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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS123 E6433

Name: BSS123 E6433
Brand: Infineon Technologies
SKU: BSS123 E6433
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123 E6433

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123 E6433.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS123 E6433 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal MOSFET with V_DS = 100 V, R_DS(on) ≤ 6 Ω at V_GS = 10 V, I_D = 0.17 A, and gate threshold voltage V_GS(th) = 0.8–2.0 V; used in low-power load switching, LED drivers, and level-shifted gate control circuits.

For engineers reviewing the BSS123 E6433 datasheet, BSS123 E6433 pinout, BSS123 E6433 application, or BSS123 E6433 equivalent, this page delivers verified electrical specs, SOT-23 package mapping, thermal derating curves, dynamic switching parameters (t_d(on), t_r, t_d(off), t_f), and validated alternative parts for discrete power switching design.

Technical Context

This device operates as a single N-channel silicon MOSFET optimized for logic-level drive compatibility - enabling direct interface with 3.3 V and 5 V microcontrollers without gate boosting. Its R_DS(on) remains ≤ 10 Ω down to V_GS = 4.5 V, supporting robust conduction in battery-powered and space-constrained systems.

The integrated body diode supports reverse current handling up to I_S = 0.17 A continuous, with V_SD = 0.85–1.3 V at I_F = 0.34 A, making it suitable for freewheeling and bidirectional signal routing where low forward drop matters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports operation across industrial 24 V, telecom 48 V, and automotive 36 V nominal rails with margin.
R_DS(on) @ V_GS = 10 V	≤ 6 Ω - ensures <100 mW conduction loss at 0.17 A DC, critical for thermally constrained PCB layouts.
V_GS(th)	0.8–2.0 V - guarantees turn-on with standard logic outputs, eliminating need for external level shifters.
C_iss	65–85 pF - enables fast switching (t_r/t_f ≤ 8 ns) with minimal gate drive energy in low-duty-cycle applications.
P_tot @ T_A = 25 °C	0.36 W - defines maximum steady-state dissipation on standard FR-4 without heatsinking.
T_j Range	−55 to +150 °C - qualified for extended-temperature industrial and automotive under-hood environments.
I_D(puls)	0.68 A - supports short-duration surge loads such as solenoid pre-charge or capacitor inrush limiting.

Pinout & Package

Supplied in SOT-23 (TO-236AB) plastic surface-mount package with standardized lead frame geometry and moisture sensitivity level MSL3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts logic-level voltage (≥2.0 V typical) to fully enhance channel; requires <50 nA leakage current.
Pin 2 (S)	Source	Reference node for gate drive and current return path; tied to system ground or low-side reference in high-side switch configurations.
Pin 3 (D)	Drain	High-side output node; handles 100 V blocking and 0.17 A continuous conduction; connects to load or supply rail.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with 3.3 V/5 V MCU GPIOs without external driver stages.
Low gate charge	Q_g ≈ 1.5 nC (derived from C_iss × V_GS) - minimizes switching losses and simplifies gate resistor selection.
Integrated body diode	V_SD = 0.85 V typ @ 0.34 A - provides inherent freewheeling path for inductive loads without discrete diode addition.
ESD robustness	HBM Class 1 (≥2 kV) - withstands handling and board assembly without special ESD precautions.
Thermal resistance	R_thJA ≤ 350 K/W - enables operation up to 85 °C ambient with 0.2 W dissipation on standard 2-layer PCB.

Applications

LED Constant-Current Driver

Microcontroller-Driven Load Switch

Use Scenario: Driving 1–3 white LEDs from 5 V supply with PWM dimming at 1–10 kHz.

IC Role / Device Role / Timing Role: Low-side current-switching element controlled by MCU PWM output.

Use Value: R_DS(on) ≤ 6 Ω limits I²R loss to <175 mW at 0.17 A, preserving efficiency and thermal headroom.

Use Scenario: Enabling/disabling 24 V sensor modules or communication peripherals via 3.3 V GPIO.

IC Role / Device Role / Timing Role: High-side or low-side power switch with logic-compatible turn-on threshold.

Use Value: V_GS(th) ≤ 2.0 V ensures reliable activation using unbuffered MCU pins, reducing BOM count.

Reverse Polarity Protection

Level-Shifting Signal Gate

Use Scenario: Protecting downstream circuitry from accidental −24 V connection in field-wirable terminals.

IC Role / Device Role / Timing Role: Source-follower configured N-MOSFET in series with positive rail.

Use Value: 100 V V_DS rating accommodates transients and reverse voltage clamping without breakdown.

Use Scenario: Translating 1.8 V UART signals to 5 V logic domain in mixed-voltage SoC interfaces.

IC Role / Device Role / Timing Role: Bidirectional level shifter using back-to-back configuration with pull-up resistors.

Use Value: Low C_iss (65–85 pF) and fast t_r/t_f (≤8 ns) preserve signal integrity up to 1 Mbps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS123DW3T1G	R_DS(on) = 5.5 Ω @ V_GS = 4.5 V (vs. 6 Ω); slightly lower V_GS(th) min (0.5 V).	Marginally better low-V_GS performance but identical SOT-23 footprint and thermal profile.	Preferred when driving from weak 3.3 V sources with marginal gate drive strength.
Diodes Incorporated DMN10H023LPS-13	R_DS(on) = 2.3 Ω @ V_GS = 4.5 V; higher I_D rating (0.5 A); same V_DS (100 V).	Higher current capability and lower on-resistance, but larger SOT-26 package (non-drop-in).	Select when upgrading to >0.2 A loads while retaining 100 V blocking and logic-level drive.

Compared with NSS123DW3T1G and DMN10H023LPS-13, BSS123 E6433 offers the tightest V_GS(th) distribution (0.8–2.0 V), best cost-performance balance for ≤0.17 A switching, and broadest legacy design adoption in space-constrained consumer and industrial controls.

Availability

BSS123 E6433 is available at Aetrix Electronics and suitable for LED drivers, microcontroller-peripheral switching, and reverse polarity protection requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSS123 E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BSS123 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for logic-compatible, low-R_DS(on), and high-reliability discrete switching in compact consumer, industrial, and automotive subsystems.

FAQ

Is BSS123 E6433 suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) as low as 0.8 V and guaranteed enhancement at V_GS ≥ 2.0 V, the BSS123 E6433 fully turns on using standard 3.3 V GPIO outputs. R_DS(on) ≤ 10 Ω at V_GS = 4.5 V ensures low conduction loss without external level shifting.

What is the maximum pulsed drain current rating?

The absolute maximum pulsed drain current is 0.68 A, specified at T_A = 25 °C with pulse width ≤ 80 µs and duty cycle ≤ 1%. This rating applies to short transient events like inrush limiting or solenoid actuation, not continuous operation.

Does BSS123 E6433 include an integrated body diode?

Yes. It features a monolithic parasitic body diode with V_SD = 0.85 V (typ) at I_F = 0.34 A and T_j = 25 °C. This diode supports freewheeling in inductive loads and reverse-current paths in level-shifting or protection topologies.

Can BSS123 E6433 be used in high-temperature environments?

Yes. It is rated for junction temperatures from −55 °C to +150 °C and has been characterized for R_DS(on) drift and V_GS(th) stability across that range. Derating curves confirm usable operation up to 125 °C ambient on standard PCBs with appropriate copper area.

BSS123 E6433 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 69 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS123 E6433 FAQ

1.How can I place an order for BSS123 E6433 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123 E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123 E6433 reliable?

The price and inventory of BSS123 E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123 E6433 is usually 5 days.

3.What payment methods are accepted for BSS123 E6433?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123 E6433 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123 E6433?

BSS123 E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123 E6433 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123 E6433?

For technical support, including BSS123 E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123 E6433 requirements.

6.How does Aetrix verify that BSS123 E6433 is sourced from the original manufacturer or authorized distributors?

All BSS123 E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123 E6433 meets industry standards.

7.What is the process for return or replacement of BSS123 E6433?

All BSS123 E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123 E6433, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123 E6433 part is unused and in its original packaging.

Return procedure for BSS123 E6433:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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