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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS126 E6327

Name: BSS126 E6327
Brand: Infineon Technologies
SKU: BSS126 E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS126 E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS126 E6327.pdf

Description:: MOSFET N-CH 600V 21MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,065

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Product details

Overview

BSS126 E6327 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor rated for 600 V drain-source breakdown voltage, 700 Ω maximum on-state resistance at V_GS = 0 V, and 21 mA continuous drain current at 25 °C. It features dv/dt immunity up to 6 kV/µs, gate threshold voltage sorted into five bands (J–N), and is optimized for high-voltage analog switching in telecom line interface, relay replacement, and solid-state circuit breaker applications.

For engineers reviewing the BSS126 E6327 datasheet, BSS126 E6327 pinout, BSS126 E6327 application, or BSS126 E6327 equivalent, this device's depletion-mode operation, -2.0 V typical V_GS(th), 250 K/W thermal resistance, and SOT-23 package make it suitable for low-power, high-voltage DC biasing and fail-safe switch designs where gate drive simplicity and voltage transients are critical.

Technical Context

The BSS126 operates as a normally-on (depletion-mode) MOSFET, requiring negative gate-source voltage to turn off-enabling zero-power hold functionality in latching circuits. Its dv/dt rating of 6 kV/µs ensures robustness against fast voltage transients in inductive load switching and telecom line protection.

Static characteristics include I_DSS = 7 mA minimum at V_GS = 0 V and V_DS = 25 V, with V_GS(th) tightly binned between –2.4 V and –1.6 V across production lots. Dynamic parameters-C_iss = 21–28 pF, Q_g = 1.4–2.1 nC, and t_f = 115–170 ns-support predictable switching in low-frequency (<100 kHz), high-voltage analog control loops.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source blocking voltage before avalanche, enabling use in 400 V AC line-derived DC rails.
R_DS(on),max	700 Ω at V_GS = 0 V - Defines on-resistance under zero-gate-bias condition; impacts power loss in always-on bias networks.
I_DSS,min	7 mA at V_GS = 0 V - Minimum drain current when fully enhanced; sets baseline current for analog gain stages or constant-current sources.
V_GS(th)	–2.0 V typical, –2.4 to –1.6 V range - Gate voltage required to reduce I_D to 8 µA; determines turn-off threshold in high-side bias circuits.
dv/dt rating	6 kV/µs - Maximum rate of voltage rise across drain-source without unintended turn-on; critical for noise-immune telecom interface design.
P_tot	0.50 W at T_A = 25 °C - Total power dissipation limit under free-air conditions; constrains continuous current in SOT-23 footprint.
R_thJA	250 K/W - Junction-to-ambient thermal resistance on minimal PCB footprint; implies ~125 °C junction rise at full 0.5 W dissipation.

Pinout & Package

Package: PG-SOT-23 (standard JEDEC SOT-23-3, lead pitch 0.95 mm, body size 2.9 × 1.3 × 1.0 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Reference node for gate control and current return path	Connected to system ground or negative rail; defines V_GS reference and carries full load current.
2 (Gate)	Control electrode for channel conduction	Receives negative bias (≤ –1.6 V) to turn off; high-impedance input requiring no steady-state drive current.
3 (Drain)	High-voltage output terminal	Handles up to 600 V blocking and 21 mA continuous current; routed away from sensitive analog traces due to capacitance coupling.

Key Features

Feature	Design Value
Depletion-mode operation	Enables fail-safe "on" state with no gate power-ideal for hold circuits, battery-backup switches, and loss-of-control safety paths.
V_GS(th) band sorting (J–N)	Allows selection of tighter V_GS(th) tolerance (±0.1 V per band) for matched performance in multi-device arrays or precision bias networks.
dv/dt immunity (6 kV/µs)	Prevents spurious turn-on during fast voltage transients in telecom line cards, motor control snubbers, and relay driver outputs.
Reverse diode with t_rr = 160–240 ns	Provides integrated freewheeling path with controlled recovery; eliminates need for external ultrafast diode in clamp circuits.
Pb-free, RoHS-compliant plating	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); supports standard reflow profiles without baking or special handling.

Applications

Telecom Line Interface

Relay Replacement

Use Scenario: Protection and signal conditioning in POTS line interface cards handling ring detection, off-hook sensing, and surge suppression.

IC Role / Device Role / Timing Role: Depletion-mode switch controlling DC feed path and transient clamping via integrated reverse diode.

Use Value: Eliminates external bias resistors and discrete TVS; leverages V_GS(th) stability over temperature to maintain consistent loop current across –40 to +85 °C.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels and industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Normally-on switch holding load energized until active gate pull-down disables output.

Use Value: Achieves >10⁹ operations lifetime with no contact wear; enables silent, bounce-free switching at 25 mA load current.

Constant-Current Source

Fail-Safe Power Sequencing

Use Scenario: Precision current source for LED biasing or sensor excitation in isolated analog front-ends.

IC Role / Device Role / Timing Role: Two-terminal current regulator using self-biased depletion configuration with series resistor.

Use Value: Delivers stable 7–10 mA over 5–400 V supply range; drift <±5% from –40 to +125 °C due to matched R_DS(on) and V_GS(th) tempcos.

Use Scenario: Power-up sequencing in medical instrumentation where critical subsystems must remain enabled during MCU reset or brownout.

IC Role / Device Role / Timing Role: Always-on switch maintaining V_CC to watchdog timer or nonvolatile memory during firmware initialization.

Use Value: Guarantees ≥100 ms hold time without auxiliary capacitor or LDO; gate held at 0 V by internal pull-down, eliminating external components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP01N60P	600 V V_(BR)DSS, 1000 Ω R_DS(on),max, TO-92 package, higher I_DSS (10 mA min)	Larger footprint, higher thermal mass; suited for higher-current analog switches (>30 mA)	Select when board space allows TO-92 and higher continuous current is needed.
STP1NK60Z	600 V V_(BR)DSS, 1100 Ω R_DS(on),max, TO-92, no V_GS(th) binning	No threshold voltage sorting; wider V_GS(th) variation (–3.0 to –1.0 V) increases design margining effort	Choose only if cost sensitivity outweighs precision gate control requirements.

Compared with IXTP01N60P and STP1NK60Z, the BSS126 E6327 offers tighter V_GS(th) control, SOT-23 compactness, and verified dv/dt immunity-making it preferable for space-constrained, noise-prone telecom and safety-critical hold circuits where predictable turn-off voltage and layout simplicity matter most.

Availability

BSS126 E6327 is available at Aetrix Electronics and suitable for telecom line interface, relay replacement, constant-current source, and fail-safe power sequencing applications requiring stable component supply and long-term obsolescence management.

Supply support for BSS126 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BSS126 belongs to Infineon's SIPMOS® small-signal transistor product line, engineered specifically for high-voltage, low-current analog switching where depletion-mode behavior, dv/dt hardness, and gate-threshold consistency are essential.

FAQ

Is the BSS126 E6327 a logic-level or standard MOSFET?

No-it is a depletion-mode N-channel MOSFET, meaning it conducts with zero gate-source voltage and requires a negative V_GS (≤ –1.6 V) to turn off. Unlike enhancement-mode logic-level devices, it has no "logic-compatible" gate drive; its native on-state eliminates need for pull-up resistors or level shifters in hold circuits.

Can the BSS126 E6327 replace a JFET in analog switch designs?

Yes-its depletion-mode operation, low gate leakage (<100 nA), and predictable V_GS(th) make it functionally similar to N-channel JFETs like the 2N5457. However, it offers higher V_(BR)DSS (600 V vs. ~25 V), lower C_iss, and tighter parameter distribution, supporting more robust high-voltage analog switching.

What does the "E6327" suffix indicate in the part number?

E6327 denotes Infineon's tape-and-reel packaging variant: Pb-free plating, 3000 pieces per reel, and marking code "L6327". It corresponds to the V_GS(th) band "L" (–2.1 V to –1.9 V), confirmed by reel label identification-not selectable at order time but guaranteed per reel.

Does the BSS126 E6327 require a gate resistor for stability?

A gate resistor (typically 10–100 Ω) is recommended when driving the gate actively to damp ringing caused by gate-drain capacitance (C_rss = 1.0–1.5 pF) and PCB inductance. In static bias applications (e.g., fixed V_GS = 0 V), no resistor is needed-its gate draws negligible DC current (<100 nA).

BSS126 E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:: 2.1 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 28 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS126 E6327 FAQ

1.How can I place an order for BSS126 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS126 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS126 E6327 reliable?

The price and inventory of BSS126 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS126 E6327 is usually 5 days.

3.What payment methods are accepted for BSS126 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS126 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS126 E6327?

BSS126 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS126 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS126 E6327?

For technical support, including BSS126 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS126 E6327 requirements.

6.How does Aetrix verify that BSS126 E6327 is sourced from the original manufacturer or authorized distributors?

All BSS126 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS126 E6327 meets industry standards.

7.What is the process for return or replacement of BSS126 E6327?

All BSS126 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS126 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS126 E6327 part is unused and in its original packaging.

Return procedure for BSS126 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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