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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS126L6327HTSA1

Name: BSS126L6327HTSA1
Brand: Infineon Technologies
SKU: BSS126L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS126L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS126L6327HTSA1.pdf

Description:: MOSFET N-CH 600V 21MA SOT23-3

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Product details

Overview

BSS126L6327HTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor rated for 600 V drain-source breakdown voltage, 700 Ω maximum R_DS(on) at V_GS = 0 V and I_D = 3 mA, and 6 kV/µs dv/dt immunity-designed for high-voltage timing, hold-off, and constant-current biasing in flyback snubber networks and relay drivers.

For engineers reviewing the BSS126L6327HTSA1 datasheet, BSS126L6327HTSA1 pinout, BSS126L6327HTSA1 application, or BSS126L6327HTSA1 equivalent, key selection criteria include verified V_GS(th) band L (–2.1 to –1.9 V), SOT-23 package thermal resistance of 250 K/W, and guaranteed 0.016 A reverse diode forward current with 240 ns max t_rr.

Technical Context

This depletion-mode MOSFET operates with gate-source voltage below threshold to maintain conduction without active drive-enabling self-biasing in high-side current sources and voltage-clamped discharge paths. Its 600 V V_(BR)DSS, 700 Ω R_DS(on), and 6 kV/µs dv/dt rating support robust operation in inductive switching environments where rapid voltage transients occur.

Integrated body diode exhibits 0.81–1.2 V V_SD at 16 mA and 160–240 ns t_rr, enabling controlled freewheeling in low-duty-cycle snubbers. Gate charge parameters (Q_g = 1.4–2.1 nC, Q_gd = 1.2–1.8 nC) confirm suitability for low-power, low-frequency (<100 kHz) switching rather than high-speed PWM.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands full mains-referenced transient surges in offline auxiliary supplies.
R_DS(on),max	700 Ω at V_GS = 0 V, I_D = 3 mA - Sets precise constant-current sink capability in bias networks.
V_GS(th) band	L: –2.1 to –1.9 V - Tight threshold grouping ensures consistent turn-on behavior across production reels.
I_DSS,min	7 mA at V_GS = 0 V, V_DS = 25 V - Defines minimum standby conduction for reliable startup sequencing.
t_rr	160–240 ns - Limits reverse recovery loss during diode commutation in snubber circuits.
P_tot	0.50 W at T_A = 25 °C - Constrains usable power in SOT-23 footprint without heatsinking.
dv/dt immunity	6 kV/µs - Prevents spurious turn-on during fast-rising line transients in AC-coupled interfaces.

Pinout & Package

Supplied in PG-SOT-23 (TO-236) plastic surface-mount package with standard lead frame geometry and Pb-free plating per RoHS. Thermal resistance junction-to-ambient is 250 K/W on minimal PCB footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	High-voltage output node	Connected to switched rail (e.g., flyback primary clamp point); rated for 600 V blocking.
2 (Gate)	Depletion-mode control terminal	Internally biased negative relative to source; no external drive needed for default ON state.
3 (Source)	Reference node / current return path	Common connection for load current and gate reference; ties to ground or bias rail.

Key Features

Feature	Design Value
Depletion-mode operation	Conducts at V_GS = 0 V-eliminates need for negative gate bias circuitry in constant-current sources.
V_GS(th) band sorting	Reel-coded band L (–2.1 to –1.9 V) enables predictable leakage and turn-off timing across batches.
dv/dt-rated structure	6 kV/µs immunity prevents false triggering during high-slew-rate voltage steps in EMI-prone environments.
Integrated fast body diode	240 ns max t_rr and 0.81 V typ V_SD support low-loss freewheeling in low-frequency clamp circuits.

Applications

AC-DC Auxiliary Supply Biasing

Flyback Snubber Current Sink

Use Scenario: Providing stable startup current to PWM controller ICs before main converter regulation engages.

IC Role / Device Role / Timing Role: Constant-current sink that pulls fixed bias current from rectified AC line via high-voltage resistor divider.

Use Value: Enables reliable first-cycle startup without auxiliary winding; 700 Ω R_DS(on) sets 10–12 mA bias at 7–8.5 V.

Use Scenario: Absorbing leakage energy from transformer primary during MOSFET off-time in discontinuous conduction mode.

IC Role / Device Role / Timing Role: Depletion-mode clamp transistor conducting only when V_DS exceeds Zener threshold-no gate drive required.

Use Value: Reduces voltage overshoot by 30–40 V vs. passive RC snubber; 6 kV/µs dv/dt rating prevents false turn-on.

Relay Hold-Off Protection

High-Voltage Level Shifter

Use Scenario: Preventing unintended relay coil energization during system power-up or brownout conditions.

IC Role / Device Role / Timing Role: High-side switch holding relay driver input at ground until microcontroller asserts active-low enable.

Use Value: Leverages depletion-mode default-ON behavior to assert safe state; V_GS(th) band L ensures <1 µA off-state leakage at 125 °C.

Use Scenario: Translating logic-level signals to control 400–600 V referenced loads in industrial I/O modules.

IC Role / Device Role / Timing Role: Voltage-translating switch isolating low-voltage MCU GPIO from high-side gate drive nodes.

Use Value: 600 V V_(BR)DSS and 250 K/W R_thJA allow direct interface without optocoupler or level-shifting IC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode high-voltage transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BSS123,215 (Nexperia)	400 V V_(BR)DSS, 100 Ω R_DS(on), no dv/dt rating specified	Not suitable for >400 V line-referenced designs; lower R_DS(on) increases standby current	Select only for sub-400 V DC bias networks where tighter R_DS(on) tolerance is critical.
FDN304P (ON Semiconductor)	–20 V V_(BR)DSS, P-channel enhancement mode, 3.5 Ω R_DS(on)	Requires active gate drive; unsuitable for self-biasing or high-voltage hold-off	Use only in low-voltage, actively driven pull-down roles-not as drop-in replacement.

Compared with BSS126L6327HTSA1, BSS123 offers higher conduction efficiency but fails at 600 V stress, while FDN304P demands gate control and cannot replicate depletion-mode fail-safe behavior-making BSS126 uniquely suited for unpowered, high-voltage, self-biasing functions.

Availability

BSS126L6327HTSA1 is available at Aetrix Electronics and suitable for AC-DC auxiliary supply biasing, flyback snubber current sinking, and relay hold-off protection requiring stable component supply under extended temperature and high-voltage stress conditions.

Supply support for BSS126L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS® small-signal transistor product line delivers high-voltage depletion-mode MOSFETs optimized for self-biasing, snubbing, and fail-safe current regulation in offline power systems.

FAQ

What is the significance of the 'L6327' suffix in BSS126L6327HTSA1?

The 'L6327' denotes Infineon's tape-and-reel packaging code: L indicates V_GS(th) band L (–2.1 to –1.9 V), 6327 specifies 3000-piece reel quantity with Pb-free plating and SOT-23 carrier tape. This coding ensures traceability to threshold voltage grouping and RoHS compliance.

Can BSS126L6327HTSA1 be used as a direct replacement for enhancement-mode MOSFETs?

No-it is a depletion-mode device that conducts at V_GS = 0 V, unlike enhancement-mode MOSFETs which require positive gate drive. Substituting it for an enhancement-mode part would cause continuous conduction and likely circuit failure unless gate biasing is completely re-engineered.

Does the integrated body diode support continuous conduction in flyback snubbers?

Yes-the diode supports up to 16 mA continuous forward current (I_S) and 64 mA pulsed current (I_S,pulse). Its 0.81–1.2 V V_SD and 160–240 ns t_rr are validated for low-duty-cycle energy clamping, not sustained rectification.

How does the 250 K/W R_thJA affect thermal design in SOT-23 layout?

At 0.50 W P_tot, this thermal resistance implies a 125 °C junction-to-ambient rise-requiring strict derating above 25 °C ambient. Layout must use ≥25 mm² copper pour on drain pad and avoid enclosed enclosures to maintain safe T_j ≤ 150 °C.

BSS126L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:: 2.1 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 28 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS126L6327HTSA1 FAQ

1.How can I place an order for BSS126L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS126L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS126L6327HTSA1 reliable?

The price and inventory of BSS126L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS126L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS126L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS126L6327HTSA1 transactions.

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4.How is shipping managed for BSS126L6327HTSA1?

BSS126L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS126L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS126L6327HTSA1?

For technical support, including BSS126L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS126L6327HTSA1 requirements.

6.How does Aetrix verify that BSS126L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS126L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS126L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS126L6327HTSA1?

All BSS126L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS126L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS126L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS126L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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