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Infineon Technologies BSS126L6906HTSA1

Part No.:
BSS126L6906HTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBSS126L6906HTSA1.pdf
Description:
MOSFET N-CH 600V 21MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,808

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Product details

Overview

BSS126L6906HTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor rated for 600 V drain-source breakdown, 700 Ω max RDS(on), and 21 mA continuous drain current at 25 °C. It features dv/dt immunity up to 6 kV/µs and is optimized for high-voltage, low-current switching in solid-state relays and ESD-protected interface circuits.

For engineers reviewing the BSS126L6906HTSA1 datasheet, BSS126L6906HTSA1 pinout, BSS126L6906HTSA1 application, or BSS126L6906HTSA1 equivalent, key selection criteria include verified VGS(th) band L (−2.1 to −1.9 V), guaranteed dv/dt ruggedness, reverse diode recovery time under 240 ns, and SOT-23 package compatibility with automated assembly.

Technical Context

This depletion-mode MOSFET operates with gate-source voltage ranging from −2.1 V to −1.9 V (band L) to achieve reliable turn-off at zero gate bias. Its 600 V V(BR)DSS and 6 kV/µs dv/dt rating enable robust operation in inductive load switching and transient-prone signal conditioning paths.

The device integrates a monolithic body diode with 160–240 ns reverse recovery time and 13.2–19.8 nC Qrr, supporting fast commutation in flyback snubbers and level-shifting clamps without external diode addition.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS600 V - Withstands 600 V drain-source blocking voltage before avalanche, enabling use in 400 V AC line-derived DC rails.
RDS(on), max700 Ω - On-resistance limits conduction loss to ≤175 mW at 16 mA, suitable for micro-power bias and leakage control.
VGS(th) bandL (−2.1 to −1.9 V) - Tight threshold spread ensures consistent turn-off behavior across production reels without gate-bias trimming.
IDSS, min7 mA - Minimum on-state current at VGS = 0 V supports predictable current sourcing in constant-current source configurations.
dv/dt rating6 kV/µs - Immune to false triggering during fast voltage transients, critical for relay replacement in noisy industrial I/O modules.
trr160–240 ns - Fast reverse recovery enables clean switching in 100 kHz–1 MHz snubberless flyback auxiliary windings.
Ciss21–28 pF - Low input capacitance minimizes gate drive power and improves high-frequency stability in oscillator bias networks.

Pinout & Package

Package: PG-SOT-23 (standard JEDEC TO-236AB footprint, 3-pin surface-mount).

Pin/TerminalCircuit RoleDesign Meaning
1 (Drain)High-voltage output nodeConnected to 600 V rail or inductive load; requires ≥0.5 mm creepage clearance per IEC 61000-4-5.
2 (Gate)Depletion-mode control terminalInternally biased negative relative to source; no external pull-down needed for default-on operation.
3 (Source)Reference and return pathCommon node for gate drive reference and diode cathode; must be tied directly to PCB ground plane for thermal stability.

Key Features

FeatureDesign Value
Depletion-mode operationConducts at VGS = 0 V, eliminating need for active gate bias circuitry in always-on fail-safe paths.
dv/dt ruggedness6 kV/µs rating validated per IEC 61000-4-4, enabling direct replacement of mechanical relays in PLC output stages.
VGS(th) band sortingReel-coded band L (−2.1 to −1.9 V) ensures batch-to-batch consistency for precision current-source designs.
Integrated body diodeMonolithic diode with 0.81–1.2 V forward drop at 16 mA supports bidirectional clamping without discrete components.
Pb-free & RoHS compliantPb-free lead plating meets EU RoHS Directive 2011/65/EU and JESD22-A114-HBM Class 0 (<250 V) ESD protection.

Applications

High-Voltage Bias GeneratorSolid-State Relay Driver

Use Scenario: Generating stable 300–500 V bias for photomultiplier tubes or CCD sensor arrays in medical imaging systems.

IC Role / Device Role / Timing Role: Depletion-mode current source providing constant 7–16 mA with minimal temperature drift.

Use Value: Eliminates need for high-voltage op-amp feedback loop; RDS(on) variation <±15% over −40 to +125 °C ensures stable gain calibration.

Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) digital output modules handling 24–240 V AC/DC loads.

IC Role / Device Role / Timing Role: High-voltage switch controlling load current with built-in dv/dt immunity and integrated flyback diode.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during inductive load switching; trr <240 ns avoids cross-conduction in half-bridge configurations.

ESD-Protected Interface ClampFlyback Snubber Element

Use Scenario: Protecting RS-485 transceiver inputs against ±8 kV contact ESD per IEC 61000-4-2 in industrial fieldbus nodes.

IC Role / Device Role / Timing Role: Fast-turning depletion-mode clamp activated by transient-induced gate coupling, not external trigger.

Use Value: V(BR)DSS = 600 V provides 3× margin above 2 kV test voltage; ID(off) ≤0.1 µA at 600 V ensures negligible standby leakage.

Use Scenario: Absorbing leakage energy in auxiliary winding snubbers of offline flyback converters operating up to 100 kHz.

IC Role / Device Role / Timing Role: Self-biased snubbing element leveraging depletion-mode conduction and fast-recovery body diode.

Use Value: Qrr = 13.2–19.8 nC and trr <240 ns minimize snubber losses; Ciss <28 pF reduces gate oscillation risk during voltage transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode high-voltage switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BSS123Lower V(BR)DSS (300 V), higher IDSS (20 mA), no dv/dt rating specifiedNot suitable for >350 V DC bus applications; lacks documented transient immunitySelect only for sub-200 V bias or low-energy clamp roles where dv/dt stress is absent.
BS170Higher RDS(on) (max 50 Ω), lower V(BR)DSS (60 V), non-depletion enhancement mode requiring gate driveRequires active gate control; unsuitable for fail-safe default-on functionsUse only when gate drive availability and low-voltage operation (<60 V) are guaranteed.

Compared with BSS126L6906HTSA1, BSS123 sacrifices voltage headroom and transient robustness for higher on-current, while BS170 abandons depletion-mode simplicity entirely-making neither a drop-in replacement for 600 V, dv/dt-critical, zero-bias applications.

Availability

BSS126L6906HTSA1 is available at Aetrix Electronics and suitable for high-voltage bias generators, solid-state relay drivers, ESD-protected interface clamps, and flyback snubber elements requiring stable component supply and traceable lot-level VGS(th) band verification.

Supply support for BSS126L6906HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The BSS126 belongs to Infineon's SIPMOS® small-signal transistor product line, designed specifically for high-voltage, low-current switching in safety-critical and reliability-demanding industrial interface and power conditioning applications.

FAQ

What does the 'L6906' suffix indicate in BSS126L6906HTSA1?

The 'L6906' suffix identifies the VGS(th) band (L) and reel packaging code (6906). Band L specifies a gate threshold voltage range of −2.1 V to −1.9 V at VDS = 3 V and ID = 8 µA. The '6906' denotes a 3000-piece tape-and-reel configuration with VGS(th)-sorted devices, labeled per JEDEC standard on the reel.

Can BSS126L6906HTSA1 replace a mechanical relay in 240 V AC output circuits?

Yes-its 600 V V(BR)DSS, 6 kV/µs dv/dt rating, and integrated body diode support direct replacement of SPST mechanical relays in 240 V AC output stages. Designers must ensure PCB layout maintains ≥2.5 mm creepage between drain and other nets, and verify peak repetitive current stays below 85 mA per pulsed rating.

Is the body diode in BSS126L6906HTSA1 suitable for freewheeling inductive loads?

Yes-the monolithic body diode has a reverse recovery time of 160–240 ns and Qrr of 13.2–19.8 nC, making it suitable for freewheeling in low-energy inductive loads (e.g., solenoid drivers ≤100 mA, 24 V). For high-current or high-frequency flyback applications, external Schottky supplementation is recommended to reduce switching loss.

How does the depletion-mode characteristic affect gate drive design?

As a depletion-mode device, BSS126L6906HTSA1 conducts at VGS = 0 V and requires a negative gate voltage (≤−1.9 V) to fully turn off. Gate drive must provide controlled negative bias-typically via a simple resistive divider from a negative rail or charge-pump circuit-not just ground referencing. No pull-down resistor is needed for default-on behavior.

BSS126L6906HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel, Depletion Mode
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Rds On (Max) @ Id, Vgs:
500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id:
2.7V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
28 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BSS126L6906HTSA1 FAQ

1.How can I place an order for BSS126L6906HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS126L6906HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS126L6906HTSA1 reliable?

The price and inventory of BSS126L6906HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS126L6906HTSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for BSS126L6906HTSA1?

For technical support, including BSS126L6906HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS126L6906HTSA1 requirements.

6.How does Aetrix verify that BSS126L6906HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS126L6906HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS126L6906HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS126L6906HTSA1?

All BSS126L6906HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS126L6906HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS126L6906HTSA1 part is unused and in its original packaging.

Return procedure for BSS126L6906HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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