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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS127H6327XTSA1

Name: BSS127H6327XTSA1
Brand: Infineon Technologies
SKU: BSS127H6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS127H6327XTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS127H6327XTSA1.pdf

Description:: MOSFET N-CH 600V 21MA SOT23-3

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Product details

Overview

BSS127H6327XTSA1 from Infineon Technologies is an AEC-Q101-qualified n-channel enhancement-mode SIPMOS® small-signal MOSFET with 600 V V_DS, 500 Ω max R_DS(on) at 4.5 V V_GS, 21 mA continuous drain current, and dv/dt rating of 6 kV/µs - used in automotive LED drivers and high-voltage sensing interfaces.

For engineers reviewing the BSS127H6327XTSA1 datasheet, BSS127H6327XTSA1 pinout, BSS127H6327XTSA1 application, or BSS127H6327XTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (4.5 V), high-voltage blocking capability, low gate charge (0.65–1.0 nC), and automotive-grade reliability under transient stress conditions.

Technical Context

This device operates as a high-voltage, low-current switching transistor optimized for logic-level gate drive in space-constrained automotive subsystems. Its 600 V breakdown voltage and 6 kV/µs dv/dt immunity enable robust operation in inductive load switching and flyback snubber circuits.

The MOSFET features a 330–600 Ω R_DS(on) at 4.5 V V_GS and 16 mA I_D, with transconductance of 7–15 mS and reverse diode recovery time of 160–240 ns - supporting fast, controlled turn-off in high-frequency auxiliary power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports direct connection to 400 V DC bus or 300 V AC rectified lines without external clamping
R_DS(on) max	600 Ω at V_GS = 4.5 V, I_D = 16 mA - enables logic-level MCU GPIO direct drive with minimal gate buffering
I_D continuous	21 mA at T_A = 25 °C - suitable for biasing, level-shifting, and low-power HV signal switching
dv/dt rating	6 kV/µs - prevents false turn-on during high-slew-rate transients in motor control feedback paths
Q_g total	0.65–1.0 nC - reduces gate driver power loss and enables >1 MHz switching in auxiliary SMPS
t_rr	160–240 ns - limits reverse recovery energy in flyback snubbers and clamp circuits
V_GS(th)	1.4–2.6 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs

Pinout & Package

Supplied in PG-SOT-23 (JEDEC TO-236AB) package with standard 3-pin configuration: Drain (pin 1), Gate (pin 2), Source (pin 3). Thermal resistance R_thJA = 250 K/W on minimal footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	High-voltage output node	Connected to 600 V rail or inductive load; requires clearance ≥1.5 mm per IPC-2221B
Pin 2 (Gate)	Control input	Logic-level compatible; gate resistor ≥100 Ω recommended to damp ringing
Pin 3 (Source)	Reference return path	Common node for gate drive reference and current sense; must be low-inductance layout

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature range (−55 °C to +150 °C) and mechanical stress testing
Logic-level gate drive	Guaranteed turn-on at 4.5 V V_GS, eliminating need for level shifters in 3.3 V systems
dv/dt immune	6 kV/µs rating prevents spurious conduction during fast voltage transients in motor phase legs
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU; no exemption required for lead content
Integrated body diode	16 mA continuous forward current, 820–1200 mV V_SD at 16 mA - usable for freewheeling in low-current flybacks

Applications

Automotive LED Headlamp Driver

High-Voltage Sensor Biasing

Use Scenario: Switching current into 48 V–60 V LED strings in adaptive front-lighting systems.

IC Role / Device Role / Timing Role: High-side switch controlling LED current path with precise on/off timing.

Use Value: 600 V V_DS withstands load-dump transients; 4.5 V logic drive simplifies MCU interface.

Use Scenario: Providing stable bias current to isolated voltage dividers in battery management cell monitors.

IC Role / Device Role / Timing Role: Precision current source enabling accurate high-impedance node sensing.

Use Value: Low leakage (<0.1 µA off-state) maintains measurement integrity; AEC-Q101 ensures long-term stability.

Industrial Flyback Snubber

Smart Fuse Control Interface

Use Scenario: Clamping voltage spikes across relay coils or solenoid drivers in PLC I/O modules.

IC Role / Device Role / Timing Role: Fast-switching snubber transistor absorbing inductive kickback energy.

Use Value: 240 ns t_rr and 6 kV/µs dv/dt rating prevent secondary breakdown during repetitive transients.

Use Scenario: Enabling/disabling current flow to smart fuse ICs in automotive power distribution units.

IC Role / Device Role / Timing Role: Isolation switch decoupling fuse control logic from high-side power rail.

Use Value: 500 Ω R_DS(on) limits standby dissipation; 21 mA rating matches fuse enable current requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 11 Ω R_DS(on) at 10 V, but not logic-level rated - requires 10 V gate drive	Higher current handling (1 A), unsuitable for 3.3 V MCU direct drive	Select only if gate driver supports ≥10 V and higher load current is needed
DMN2004LK-7	20 V V_DS, 32 mΩ R_DS(on), logic-level - lacks high-voltage capability	Designed for low-voltage digital loads; cannot replace in 400+ V systems	Use only in sub-24 V applications where 600 V rating is unnecessary

Compared with STP1NK60Z and DMN2004LK-7, BSS127H6327XTSA1 uniquely combines 600 V blocking, 4.5 V logic compatibility, and AEC-Q101 qualification - making it the only viable choice for automotive 3.3 V-controlled HV bias and snubbing functions.

Availability

BSS127H6327XTSA1 is available at Aetrix Electronics and suitable for automotive lighting control, high-voltage sensor biasing, and industrial flyback snubbing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSS127H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

BSS127 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-voltage, low-current switching in automotive and industrial environments where logic-level drive and transient robustness are critical.

FAQ

Is BSS127H6327XTSA1 suitable for 3.3 V microcontroller direct drive?

Yes. With V_GS(th) of 1.4–2.6 V and guaranteed R_DS(on) ≤600 Ω at V_GS = 4.5 V, it reliably turns on using standard 3.3 V GPIO outputs - no level shifter required. Gate charge of 0.65–1.0 nC further ensures low drive power consumption.

What is the maximum operating junction temperature?

The absolute maximum junction temperature is 150 °C, validated per AEC-Q101 stress testing. Derating begins at T_A = 70 °C, where continuous I_D drops to 17 mA. Thermal resistance R_thJA is 250 K/W on minimal PCB footprint.

Does this MOSFET include an integrated body diode?

Yes. It features a monolithic body diode rated for 16 mA continuous forward current and 820–1200 mV forward voltage at 16 mA and 25 °C. Reverse recovery time is 160–240 ns, making it suitable for low-energy freewheeling in auxiliary power circuits.

How does the dv/dt rating impact circuit layout?

The 6 kV/µs dv/dt immunity allows safe operation in high-slew-rate nodes, but layout still requires minimizing gate loop inductance. Use short, wide traces between gate resistor and pin 2, and avoid routing gate traces parallel to high-dv/dt drain paths to prevent capacitive coupling-induced false turn-on.

BSS127H6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:: 1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 28 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS127H6327XTSA1 FAQ

1.How can I place an order for BSS127H6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS127H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS127H6327XTSA1 reliable?

The price and inventory of BSS127H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS127H6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSS127H6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS127H6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS127H6327XTSA1?

BSS127H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS127H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS127H6327XTSA1?

For technical support, including BSS127H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS127H6327XTSA1 requirements.

6.How does Aetrix verify that BSS127H6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS127H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS127H6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSS127H6327XTSA1?

All BSS127H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS127H6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS127H6327XTSA1 part is unused and in its original packaging.

Return procedure for BSS127H6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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