Infineon Technologies BSS127L6327HTSA1
- Part No.:
- BSS127L6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS127L6327HTSA1.pdf
- Description:
- MOSFET N-CH 600V 21MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,238
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Product details
Overview
BSS127L6327HTSA1 from Infineon Technologies is an n-channel enhancement-mode SIPMOS® small-signal MOSFET rated for 600 V drain-source voltage, 500 Ω max RDS(on) at 4.5 V gate drive, and 21 mA continuous drain current. It features logic-level gate drive compatibility (VGS(th) = 1.4–2.6 V), 6 kV/µs dv/dt immunity, and AEC-Q101 qualification for automotive signal switching applications.
For engineers reviewing the BSS127L6327HTSA1 datasheet, BSS127L6327HTSA1 pinout, BSS127L6327HTSA1 application, or BSS127L6327HTSA1 equivalent, key selection criteria include its high-voltage blocking capability, low gate charge (Qg = 0.65–1.0 nC), fast turn-off delay (14–21 ns), and SOT-23 package suitability for space-constrained flyback snubber or LED driver control circuits.
Technical Context
This MOSFET operates in enhancement mode with a threshold voltage tightly specified between 1.4 V and 2.6 V at ID = 8 µA, enabling reliable turn-on from 3.3 V or 5 V logic controllers. Its 600 V V(BR)DSS rating supports operation in 400 V DC bus environments with margin, and its 6 kV/µs dv/dt rating ensures robustness against parasitic ringing in inductive switching nodes.
Dynamic performance is defined by low input capacitance (Ciss = 21–28 pF), moderate reverse transfer capacitance (Crss = 1.0–1.5 pF), and gate plateau voltage of 3.56 V - all contributing to predictable switching behavior under PWM control in isolated DC-DC feedback paths and high-side sensing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports operation across 400 V DC link systems with safety margin |
| RDS(on) max @ 4.5 V | 600 Ω - defines on-state power loss in low-current (<21 mA) switching paths |
| ID cont @ 25 °C | 21 mA - sets maximum steady-state load current in signal-level power switches |
| Qg total | 0.65–1.0 nC - determines gate driver strength requirement for <20 ns switching transitions |
| dv/dt immunity | 6 kV/µs - prevents false turn-on during high-slew-rate transients in snubber networks |
| VGS(th) | 1.4–2.6 V - ensures full enhancement with standard 3.3 V microcontroller GPIO outputs |
| tr/tf | 9.7–14.5 ns / 115–170 ns - asymmetric rise/fall reflects internal capacitance ratio for controlled turn-on |
Pinout & Package
Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin, lead-free and halogen-free per IEC61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | High-voltage output node | Connected to 600 V rail or inductive load; requires clearance/creepage design per IEC61000-4-5 |
| 2 (Gate) | Control input | Low-charge node (Qgs = 0.07–0.10 nC); sensitive to ESD (Class 0 HBM) |
| 3 (Source) | Reference return path | Common node for gate drive reference and current sense; ties to ground or floating bias network |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced from 3.3 V or 5 V MCU outputs without level-shifting circuitry |
| AEC-Q101 qualified | Validated for automotive temperature range (−55 °C to +150 °C) and mechanical stress requirements |
| dv/dt rated | Immune to spurious turn-on up to 6 kV/µs - critical for reliability in flyback transformer primary snubbers |
| Integrated body diode | Reverse recovery time trr = 160–240 ns enables use in freewheeling paths with controlled commutation loss |
| Halogen-free & RoHS | Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing |
Applications
| LED Driver Feedback Switch | Flyback Snubber Switch |
|---|---|
Use Scenario: Isolated constant-current LED driver using optocoupler feedback loop where MOSFET switches secondary-side error signal to primary controller. IC Role / Device Role / Timing Role: Signal-level high-voltage switch translating analog feedback into digital enable/disable pulses for primary-side PWM IC. Use Value: 600 V rating withstands reflected output transients; low Qg allows clean edge timing for stable regulation bandwidth up to 100 kHz. | Use Scenario: RC-D clamp snubber in offline flyback converters, where MOSFET replaces diode to reduce losses and improve dv/dt immunity. IC Role / Device Role / Timing Role: Active clamping switch synchronized with main power MOSFET's off-time to absorb leakage inductance energy. Use Value: 6 kV/µs dv/dt rating prevents false triggering during high-slew primary voltage transitions; fast td(off) enables precise timing alignment. |
| Automotive Sensor Interface | Industrial Level-Shifter |
Use Scenario: High-side current sensing interface in 12 V/24 V automotive subsystems (e.g., HVAC blower control), where MOSFET isolates sensor output from noisy battery rails. IC Role / Device Role / Timing Role: Voltage-controlled isolation switch enabling fault-tolerant signal routing between LIN/CAN nodes and microcontroller ADC inputs. Use Value: AEC-Q101 qualification ensures operation over −40 °C to +125 °C ambient; low ID(off) (<0.1 µA at 25 °C) preserves sensor accuracy. | Use Scenario: Bidirectional level translation between 3.3 V FPGA I/O and 5 V industrial fieldbus receivers (e.g., RS-485 transceiver enable lines). IC Role / Device Role / Timing Role: Passive pull-up/pull-down switch implementing open-drain logic translation without active drivers. Use Value: VGS(th) window (1.4–2.6 V) guarantees unambiguous turn-on from 3.3 V logic while rejecting noise below 1.4 V; SOT-23 footprint saves board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage signal-switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60Z | 600 V VDS, but higher RDS(on) (10 Ω typ), larger TO-92 package, no AEC-Q101 qualification | Not suitable for automotive or space-constrained PCBs; limited to low-frequency AC/DC auxiliary supplies | Select only if cost is primary concern and AEC-Q101 compliance is unnecessary |
| DMN2004LK-7 | 20 V VDS, 2.2 Ω RDS(on), SOT-23 package, logic-level, but insufficient voltage rating | Cannot replace in 400 V+ circuits; usable only in sub-12 V logic-level switching | Reject for BSS127L6327HTSA1 replacement; consider only for low-voltage digital isolation |
Compared with STP1NK60Z and DMN2004LK-7, BSS127L6327HTSA1 uniquely combines AEC-Q101 qualification, 600 V rating, SOT-23 footprint, and logic-level gate drive - making it irreplaceable in automotive-grade, high-voltage signal switching where size, reliability, and voltage margin are jointly constrained.
Availability
BSS127L6327HTSA1 is available at Aetrix Electronics and suitable for LED driver feedback, flyback snubber circuits, automotive sensor interfaces, and industrial level-shifter designs requiring stable component supply across production lifecycles.
Supply support for BSS127L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The SIPMOS® small-signal transistor product line delivers high-voltage, low-charge MOSFETs optimized for precision signal switching in automotive, industrial, and lighting control systems - emphasizing reliability, compact packaging, and robust transient immunity.
FAQ
Is BSS127L6327HTSA1 suitable for 400 V DC bus applications?
Yes. With a 600 V V(BR)DSS rating and 150 °C maximum junction temperature, it provides 50% voltage margin above 400 V DC bus operation. Its 6 kV/µs dv/dt rating further ensures stability against transient overshoots common in unregulated offline supplies.
What is the maximum gate resistor value for reliable switching at 100 kHz?
Based on Qg = 0.65–1.0 nC and typical 3.3 V gate drive, a 100 Ω series resistor limits peak gate current to ~33 mA and yields ~10 ns RC time constant - sufficient for 100 kHz PWM with >50% duty cycle margin. Higher values risk incomplete turn-on within available gate drive pulse width.
Does BSS127L6327HTSA1 include an integrated body diode?
Yes. It features a monolithic n-channel MOSFET with an inherent parasitic body diode oriented source-to-drain. Reverse recovery time is specified as 160–240 ns at IF = 16 mA, supporting use in freewheeling and active clamp configurations where controlled diode conduction is required.
Can this part be used in place of a BSS138 in a 3.3 V logic circuit?
No. While both are SOT-23 n-channel MOSFETs, BSS127L6327HTSA1 has 600 V VDS and 500 Ω RDS(on), whereas BSS138 offers 50 V VDS and 3.5 Ω RDS(on). Substituting would cause excessive on-resistance and thermal failure under identical load conditions - they serve fundamentally different voltage-class applications.
BSS127L6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 28 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS127L6327HTSA1 FAQ
1.How can I place an order for BSS127L6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS127L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS127L6327HTSA1 reliable?
The price and inventory of BSS127L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS127L6327HTSA1 is usually 5 days.
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5.How can I obtain technical support or documentation for BSS127L6327HTSA1?
For technical support, including BSS127L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS127L6327HTSA1 requirements.
6.How does Aetrix verify that BSS127L6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS127L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS127L6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS127L6327HTSA1?
All BSS127L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS127L6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS127L6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS127L6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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