Infineon Technologies BSS131E6327
- Part No.:
- BSS131E6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS131E6327.pdf
- Description:
- MOSFET N-CH 240V 110MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:4,528
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSS131E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS® small-signal transistor in PG-SOT-23 package, rated for 240 V VDS, 14 Ω RDS(on) max at VGS = 10 V and ID = 0.1 A, with 6 kV/µs dv/dt immunity and AEC-Q101 qualification for automotive use.
For engineers reviewing the BSS131E6327 datasheet, BSS131E6327 pinout, BSS131E6327 application, or BSS131E6327 equivalent, this device is selected for low-power switching in space-constrained automotive body electronics, LED drivers, and load-switching circuits where logic-level gate drive and high dv/dt robustness are required.
Technical Context
This transistor operates in enhancement mode with a gate threshold voltage of 0.8–1.8 V, enabling direct drive from 3.3 V or 5 V microcontrollers. Its 240 V breakdown voltage and 6 kV/µs dv/dt rating support reliable operation in inductive load switching environments such as solenoid control and relay drivers.
The integrated body diode exhibits 42.9–64.3 ns reverse recovery time and 22.6–34 nC Qrr, supporting moderate-frequency commutation. Thermal resistance RthJA is 350 K/W (minimal footprint), limiting continuous power dissipation to 0.36 W at TA = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 240 V - supports switching loads up to 200 V DC with margin for transients |
| RDS(on) max | 14 Ω at VGS = 10 V, ID = 0.1 A - enables <1.4 V drop at 100 mA, suitable for low-loss load switching |
| ID continuous | 0.11 A at TA = 25 °C - defines maximum steady-state current in ambient-mounted SOT-23 |
| dv/dt rating | 6 kV/µs - ensures immunity to fast voltage transients in automotive and industrial inductive switching |
| Qg total | 2.1–3.1 nC - determines gate drive energy requirement for ~100 ns switching transitions |
| trr | 42.9–64.3 ns - sets minimum dead-time requirements when used in half-bridge configurations |
| Tj range | −55 to +150 °C - qualified for under-hood automotive applications per AEC-Q101 |
Pinout & Package
Package: PG-SOT-23 (standard JEDEC TO-236AB), surface-mount, three-terminal plastic package with exposed drain pad for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main current-carrying terminal (high-side switch node) | Connected to load supply rail; electrically tied to exposed pad for thermal conduction |
| 2 (Gate) | Control input for channel conduction | Logic-level compatible (VGS(th) ≤ 1.8 V); requires <3.1 nC charge for full turn-on |
| 3 (Source) | Reference terminal and current return path | Typically grounded in low-side switch configuration; defines VGS reference for gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) max = 1.8 V - eliminates need for gate driver IC when interfaced with 3.3 V/5 V MCUs |
| AEC-Q101 qualified | Qualified for automotive applications including body control modules and lighting systems |
| High dv/dt immunity | 6 kV/µs - prevents false turn-on during fast voltage transients in inductive load switching |
| Pb-free & RoHS compliant | Pb-free lead plating - meets EU RoHS Directive 2011/65/EU and automotive ELV requirements |
| Integrated body diode | Reverse recovery time trr ≤ 64.3 ns - supports efficient freewheeling in low-frequency PWM loads |
Applications
| Automotive Body Control | LED Lighting Driver |
|---|---|
Use Scenario: Switching 12 V incandescent or LED lamps in door modules and interior lighting. IC Role / Device Role / Timing Role: Low-side load switch controlled by MCU GPIO with minimal external components. Use Value: Logic-level gate enables direct MCU drive; 240 V rating accommodates battery transients up to ISO 7637-2 Pulse 5a. | Use Scenario: Constant-current dimming of automotive LED strings using PWM-controlled series switch. IC Role / Device Role / Timing Role: High-side or low-side current-path switch modulated at 100–1000 Hz. Use Value: Low RDS(on) minimizes power loss (<140 mW at 100 mA); fast tf (64.5–97 ns) supports clean PWM edges. |
| Industrial Sensor Interface | Power Supply Sequencing |
Use Scenario: Enabling/disabling 24 V sensor power rails in PLC I/O modules. IC Role / Device Role / Timing Role: Protected load switch with overtemperature and dv/dt immunity. Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on from EMI; −55 to +150 °C operation covers extended industrial temperature range. | Use Scenario: Controlled power-up sequencing of auxiliary rails in embedded power supplies. IC Role / Device Role / Timing Role: Delayed enable switch triggered by supervisor IC output. Use Value: Low gate charge (≤3.1 nC) allows fast, low-energy turn-on; SOA curve supports single-pulse surge up to 0.4 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level small-signal switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 3.5 Ω @ VGS = 4.5 V; higher current rating (0.45 A) | Lower on-resistance suits higher-current loads but requires larger PCB footprint (SOT-26) | Select when >100 mA continuous current or lower conduction loss is required |
| BS170 | VDS = 60 V; RDS(on) = 5 Ω @ VGS = 10 V; not AEC-Q101 qualified | Limited to non-automotive 5–12 V systems; lacks dv/dt immunity and high-temp reliability | Select only for cost-sensitive consumer-grade 3.3/5 V logic switching below 60 V |
Compared with DMN2004LK-7 and BS170, BSS131E6327 uniquely balances 240 V capability, AEC-Q101 qualification, and logic-level drive in SOT-23 - making it optimal for automotive 12 V/24 V load switching where space, reliability, and transient immunity are critical.
Availability
BSS131E6327 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, industrial sensor interfaces, and power supply sequencing requiring stable component supply across production lifecycles.
Supply support for BSS131E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The SIPMOS® small-signal transistor product line delivers logic-compatible, high-reliability MOSFETs optimized for automotive and industrial load switching where compact size, dv/dt immunity, and AEC-Q101 compliance are essential.
FAQ
What is the maximum gate-source voltage for BSS131E6327?
The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, VGS should be limited to 0–10 V in normal operation, with transient spikes clamped by external Zener protection if needed.
Can BSS131E6327 be used in high-frequency PWM applications?
It supports PWM frequencies up to ~1 MHz in low-duty-cycle, low-current conditions, but its 64.5–97 ns fall time and 2.1–3.1 nC gate charge make it best suited for <100 kHz switching. For >500 kHz, consider devices with lower Qg and faster tf.
Is the body diode suitable for continuous freewheeling?
Yes - the integrated body diode supports continuous forward current up to 0.11 A and pulsed current up to 0.43 A. Its 0.81–1.2 V forward voltage at 0.1 A and 42.9–64.3 ns trr allow efficient freewheeling in low-frequency inductive loads like solenoids and relays.
Does BSS131E6327 require a gate resistor in typical applications?
A gate resistor (10–100 Ω) is recommended to damp ringing and limit peak gate current during switching. While not strictly required for logic-level drive, it improves EMI performance and prevents oscillation, especially with long PCB traces or high di/dt loads.
BSS131E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 110mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 77 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS131E6327 FAQ
1.How can I place an order for BSS131E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS131E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS131E6327 reliable?
The price and inventory of BSS131E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS131E6327 is usually 5 days.
3.What payment methods are accepted for BSS131E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS131E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS131E6327?
BSS131E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS131E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS131E6327?
For technical support, including BSS131E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS131E6327 requirements.
6.How does Aetrix verify that BSS131E6327 is sourced from the original manufacturer or authorized distributors?
All BSS131E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS131E6327 meets industry standards.
7.What is the process for return or replacement of BSS131E6327?
All BSS131E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS131E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS131E6327 part is unused and in its original packaging.
Return procedure for BSS131E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSS131E6327 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

