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Infineon Technologies BSS138N-E6327

Part No.:
BSS138N-E6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBSS138N-E6327.pdf
Description:
MOSFET N-CH 60V 230MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,986

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Product details

Overview

BSS138N-E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS® small-signal MOSFET rated for 60 V VDS, 3.5 Ω RDS(on) at 4.5 V VGS, and 0.23 A continuous drain current. It features dv/dt ruggedness (6 kV/µs), AEC-Q101 qualification, and operates across –55 °C to 150 °C junction temperature-used in automotive LED control, low-side load switching, and power management in space-constrained PCBs.

For engineers reviewing the BSS138N-E6327 datasheet, BSS138N-E6327 pinout, BSS138N-E6327 application, or BSS138N-E6327 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 0.6–1.4 V), thermal resistance (RthJA = 350 K/W), reverse diode recovery (trr = 9.1–14.5 ns), and SOT-23 footprint suitability for high-density routing.

Technical Context

This discrete MOSFET uses a planar SIPMOS® process optimized for fast switching and robust dv/dt immunity. Its gate threshold voltage (0.6–1.4 V) ensures reliable turn-on with 3.3 V or 5 V logic, while the integrated body diode supports freewheeling in inductive loads.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing and halogen-free compliance per IEC61249-2-21. The device's low Qg (1.0–1.4 nC) and Ciss (32–41 pF) enable efficient high-frequency operation up to several MHz in DC-DC and signal-switching applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - maximum blocking voltage before avalanche; suitable for 24 V automotive and 48 V industrial bus interfaces
RDS(on) @ 4.5 V3.5 Ω max - enables low conduction loss at logic-level gate drive; supports ≤0.23 A continuous load without heatsink
ID continuous0.23 A @ TA = 25 °C - defines steady-state current capability in minimal-footprint SOT-23 package
dv/dt rating6 kV/µs - withstands rapid voltage transients common in motor commutation and relay driving
trr9.1–14.5 ns - fast body diode recovery reduces switching losses in synchronous rectification and flyback snubbing
Qg1.4 nC max - low total gate charge minimizes driver power and speeds up turn-on/turn-off transitions
RthJA350 K/W - thermal resistance limits power dissipation to 0.36 W at ambient; requires careful layout for >100 mW operation

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic package with standard footprint and tape-and-reel delivery (H6327: 3000 units/reel).

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives logic-level voltage (≥3.3 V) to fully enhance channel; ESD-sensitive (Class 0 HBM)
2 (Source)Reference nodeCommon return path for drain current; tied to ground or low-side reference in most switch configurations
3 (Drain)Power outputCarries switched load current; connected to positive rail or inductive load; exposed pad not present in SOT-23

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 0.6–1.4 V ensures full enhancement with 3.3 V microcontroller outputs without level-shifting
AEC-Q101 qualifiedValidated for automotive electronics including body control modules and lighting systems under extended temperature and vibration stress
dv/dt ruggedness6 kV/µs rating prevents false turn-on during high-slew transients in motor drivers and solenoid controls
Halogen-free & RoHSComplies with IEC61249-2-21 and EU RoHS Directive; Pb-free terminations support lead-free reflow assembly

Applications

Automotive LED Headlamp SwitchingIndustrial Sensor Power Gating

Use Scenario: Low-side switching of 12 V LED arrays in headlamp modules with PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: Discrete N-channel MOSFET acting as controlled current sink; handles repetitive 0.2 A pulses with <10 ns switching transitions.

Use Value: Logic-level gate enables direct MCU GPIO drive; dv/dt immunity prevents misfiring during ignition noise bursts.

Use Scenario: Power sequencing for analog sensor subsystems (e.g., pressure, temp) in programmable logic controllers.

IC Role / Device Role / Timing Role: Load switch isolating 3.3 V/5 V sensor rails during standby; activated on wake-up interrupt.

Use Value: Low RDS(on) minimizes dropout (<0.8 V at 0.15 A); fast trr avoids cross-conduction during rail ramp-up.

USB-C Port Power Delivery ControlConsumer Appliance Motor Commutation

Use Scenario: Reverse-voltage protection and load disconnect in USB-C PD source port circuitry.

IC Role / Device Role / Timing Role: Back-to-back configuration with second MOSFET to block reverse current; operates in linear region during soft-start.

Use Value: Tight VGS(th) distribution ensures matched turn-on behavior; low Qgd (0.4 nC) improves transient response during fault events.

Use Scenario: Low-side switching in brushed DC motor H-bridge half-bridge legs for home appliance fans and pumps.

IC Role / Device Role / Timing Role: High-speed switching element handling 0.2 A stall current and 0.92 A pulsed loads at 1–5 kHz PWM.

Use Value: Robust body diode (IS = 0.23 A, trr = 14.5 ns max) sustains flyback energy without external Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LK-7RDS(on) = 2.8 Ω @ 4.5 V; higher ID = 0.3 A; same SOT-23 packageMarginally better conduction loss but lower dv/dt rating (not specified); no AEC-Q101 qualificationSelect when higher current headroom is needed and automotive qualification is not required.
2N7002K-T1-GE3RDS(on) = 3.5 Ω @ 4.5 V; same VDS = 60 V; lower Qg = 0.7 nC; no dv/dt or AEC-Q101 specLower gate drive energy but unqualified for automotive; less rugged under voltage transientsPrefer for cost-sensitive consumer designs where transient immunity is not critical.

Compared with DMN2004LK-7 and 2N7002K-T1-GE3, BSS138N-E6327 uniquely combines AEC-Q101 qualification, 6 kV/µs dv/dt rating, and tight VGS(th) tolerance-making it the only choice for safety-critical automotive load switching where reliability under electrical stress is mandatory.

Availability

BSS138N-E6327 is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor power gating, and USB-C PD protection requiring stable component supply across multi-year production cycles.

Supply support for BSS138N-E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The SIPMOS® small-signal transistor product line delivers logic-compatible, AEC-Q101-qualified MOSFETs optimized for high-reliability load switching in automotive and industrial environments where space, thermal performance, and transient immunity are critical.

FAQ

Is BSS138N-E6327 suitable for 3.3 V microcontroller GPIO direct drive?

Yes. With a guaranteed gate threshold voltage range of 0.6–1.4 V and full enhancement at VGS = 4.5 V, the BSS138N-E6327 reliably switches on using standard 3.3 V CMOS outputs. Its low RDS(on) (3.5 Ω max at 4.5 V) ensures minimal voltage drop and power loss at typical load currents below 0.2 A.

Does BSS138N-E6327 include an integrated body diode, and what are its specifications?

Yes. It integrates a monolithic body diode rated for 0.23 A continuous forward current and 0.92 A pulsed current. Diode forward voltage is 0.83–1.2 V at IF = 0.23 A and Tj = 25 °C, with reverse recovery time of 9.1–14.5 ns under specified test conditions (VR = 30 V, diF/dt = 100 A/µs).

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed 150 °C. At ambient temperatures above 70 °C, derating applies: continuous drain current drops from 0.23 A at 25 °C to 0.18 A at 70 °C. Thermal design must account for RthJA = 350 K/W and power dissipation limits (0.36 W at 25 °C ambient).

Can BSS138N-E6327 replace BSS138 in existing designs?

Yes, with verification of layout and stress conditions. BSS138N-E6327 offers improved dv/dt immunity (6 kV/µs vs. unspecified for legacy BSS138), tighter VGS(th) distribution, and AEC-Q101 qualification. Electrical parameters are compatible, but the enhanced ruggedness may reduce need for external snubbers in noisy environments.

BSS138N-E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
41 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
360mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BSS138N-E6327 FAQ

1.How can I place an order for BSS138N-E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS138N-E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS138N-E6327 reliable?

The price and inventory of BSS138N-E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138N-E6327 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS138N-E6327 transactions.

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BSS138N-E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS138N-E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS138N-E6327?

For technical support, including BSS138N-E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS138N-E6327 requirements.

6.How does Aetrix verify that BSS138N-E6327 is sourced from the original manufacturer or authorized distributors?

All BSS138N-E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138N-E6327 meets industry standards.

7.What is the process for return or replacement of BSS138N-E6327?

All BSS138N-E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS138N-E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS138N-E6327 part is unused and in its original packaging.

Return procedure for BSS138N-E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS138N-E6327 Tags

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