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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS138N E6433

Name: BSS138N E6433
Brand: Infineon Technologies
SKU: BSS138N E6433
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS138N E6433

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS138N E6433.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS138N from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS® small-signal MOSFET rated for 60 V drain-source voltage, 0.23 A continuous drain current at 25 °C, and 3.5 Ω maximum R_DS(on) at V_GS = 4.5 V - enabling direct drive from 3.3 V/5 V microcontrollers in low-power switching applications such as LED control and level shifting in automotive body electronics.

For engineers reviewing the BSS138N datasheet, BSS138N pinout, BSS138N application, or BSS138N equivalent, key selection criteria include its AEC-Q101 qualification, dv/dt ruggedness (6 kV/µs), 0.1 µA off-state leakage at 60 V, 32 pF input capacitance, and SOT-23 package compatibility with high-density PCB layouts.

Technical Context

This discrete MOSFET operates in enhancement mode with a gate threshold voltage of 0.6–1.4 V and supports logic-level gate drive down to 3.3 V, ensuring reliable turn-on without external level-shifting circuitry. Its integrated body diode exhibits 9.1–14.5 ns reverse recovery time and 3.3–5 nC Q_rr, suitable for moderate-frequency commutation.

The device features dv/dt immunity up to 6 kV/µs under specified conditions (I_D = 0.23 A, V_DS = 48 V, di/dt = 200 A/µs), confirming robustness against parasitic turn-on in inductive load switching. Thermal resistance R_thJA is 350 K/W on minimal footprint, defining power derating above 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports operation across 12 V and 24 V automotive supply rails with margin for transients.
R_DS(on) max	3.5 Ω at V_GS = 4.5 V, I_D = 0.19 A - enables <170 mW conduction loss at 0.2 A, suitable for battery-powered loads.
I_D cont	0.23 A at T_A = 25 °C - defines maximum steady-state current in standard SOT-23 thermal environment.
Q_g	1.0–1.4 nC - low gate charge allows fast switching with minimal driver strength (e.g., GPIO pins).
C_iss	32–41 pF - limits capacitive loading on driving MCU outputs and reduces EMI risk in low-noise designs.
dv/dt rating	6 kV/µs - ensures immunity to false triggering during high-slew-rate voltage transients in motor or relay circuits.
T_j range	−55 to +150 °C - validated for under-hood automotive use per AEC-Q101 stress testing.

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic package with standard footprint and tape-and-reel packaging (H6433: 10,000 units per reel).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Current sink node	Connected to load return path; requires thermal relief on PCB for power dissipation up to 360 mW.
2 (Gate)	Control input	High-impedance terminal; 10 kΩ series resistor recommended to damp ringing and limit ESD-induced dv/dt.
3 (Source)	Reference node	Common return for gate drive and load; ties to system ground or floating reference depending on high-side/low-side configuration.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V MCU systems.
AEC-Q101 qualified	Validated for automotive applications including interior lighting, sensor interfaces, and door module switches.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and EU RoHS Directive - supports green manufacturing and end-of-life compliance.
dv/dt ruggedness	Withstands 6 kV/µs voltage transients without spurious turn-on - critical for relay coil and solenoid drive reliability.
Low gate charge	Q_g ≤ 1.4 nC - reduces switching energy and enables >1 MHz operation with minimal driver overhead.

Applications

Automotive Interior Lighting

USB Port Power Switching

Use Scenario: Driving white LED strings in dome lights and map lights using PWM from a body control module.

IC Role / Device Role / Timing Role: Low-side switch controlling current path to LED cathodes; handles 100–500 Hz PWM with minimal dead-time impact.

Use Value: 0.23 A rating and 3.5 Ω R_DS(on) limit power loss to <30 mW per channel, reducing thermal design burden in sealed lamp housings.

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in automotive infotainment head units.

IC Role / Device Role / Timing Role: Load switch isolating 5 V supply; activated by microcontroller GPIO with no external bias components.

Use Value: Logic-level gate ensures full enhancement at 3.3 V MCU output, while 0.1 µA off-leakage prevents standby current drain in sleep modes.

Industrial Sensor Interface

IoT Node Level Shifting

Use Scenario: Isolating analog sensor outputs (e.g., thermistors, potentiometers) from microcontroller ADC inputs via multiplexed switching.

IC Role / Device Role / Timing Role: Analog switch element in signal path; operated in linear region for low-distortion voltage pass-through.

Use Value: Low C_iss (32 pF) and 2.2 Ω typical R_DS(on) at 10 V preserve signal bandwidth and minimize gain error in 12-bit measurement systems.

Use Scenario: Translating 1.8 V I²C signals from ultra-low-power MCUs to 3.3 V peripherals in battery-operated edge sensors.

IC Role / Device Role / Timing Role: Bidirectional level shifter using back-to-back configuration; relies on intrinsic body diode conduction.

Use Value: Verified 9.1 ns t_rr and 0.83 V V_SD ensure sub-400 kHz I²C timing compliance without added capacitance or delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 2.8 Ω max at V_GS = 4.5 V; higher I_D = 0.3 A; same SOT-23 package.	Lower on-resistance improves efficiency in 0.2–0.3 A continuous loads but increases gate charge (1.6 nC).	Select when lower conduction loss outweighs gate drive capability constraints.
2N7002K	R_DS(on) = 5.5 Ω max at V_GS = 4.5 V; not AEC-Q101 qualified; identical footprint.	Lacks automotive qualification and dv/dt rating - limited to consumer/industrial non-safety-critical use.	Choose only for cost-sensitive non-automotive designs where transient immunity is not required.

Compared with DMN2004K-7 and 2N7002K, the BSS138N uniquely combines AEC-Q101 qualification, 6 kV/µs dv/dt rating, and 3.5 Ω R_DS(on) in SOT-23 - making it the preferred choice for automotive body electronics requiring both reliability and logic-level drive.

Availability

BSS138N is available at Aetrix Electronics and suitable for automotive interior lighting, USB power switching, industrial sensor interface, and IoT node level shifting requiring stable component supply and long-term lifecycle support.

Supply support for BSS138N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions.

The BSS138N belongs to Infineon's SIPMOS® small-signal transistor product line, designed specifically for logic-level switching in space-constrained, reliability-critical automotive and industrial applications.

FAQ

Is the BSS138N suitable for high-side switching configurations?

No - the BSS138N is optimized for low-side switching due to its single N-channel structure and lack of integrated charge pump or bootstrap circuitry. High-side operation would require external gate voltage boosting beyond the source potential, which is not supported by its ±20 V V_GS rating or thermal design.

What is the maximum safe operating frequency for PWM switching with the BSS138N?

Based on its 1.4 nC total gate charge and 32 pF input capacitance, the BSS138N supports clean switching up to approximately 2 MHz with a 100 Ω gate resistor and 3.3 V drive. However, practical thermal limits at 0.23 A constrain continuous operation to ≤500 kHz in unheatsinked SOT-23 layouts.

Does the BSS138N have avalanche rating information in its datasheet?

No - the official Infineon datasheet Rev. 2.86 does not specify single-pulse or repetitive avalanche energy ratings (E_AS). Designers must avoid operation in avalanche breakdown and implement snubbers or clamping for inductive loads exceeding the 60 V V_DS rating.

Can the BSS138N replace the 2N7002 in existing designs without layout changes?

Yes - the BSS138N shares the same PG-SOT-23 footprint and pinout as the 2N7002, and offers lower R_DS(on) (3.5 Ω vs. 5.5 Ω) and AEC-Q101 qualification. However, its tighter V_GS(th) distribution (0.6–1.4 V) may increase sensitivity to noise in marginal gate-drive scenarios.

BSS138N E6433 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 230mA, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS138N E6433 FAQ

1.How can I place an order for BSS138N E6433 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS138N E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS138N E6433 reliable?

The price and inventory of BSS138N E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138N E6433 is usually 5 days.

3.What payment methods are accepted for BSS138N E6433?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS138N E6433 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS138N E6433?

BSS138N E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS138N E6433 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS138N E6433?

For technical support, including BSS138N E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS138N E6433 requirements.

6.How does Aetrix verify that BSS138N E6433 is sourced from the original manufacturer or authorized distributors?

All BSS138N E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138N E6433 meets industry standards.

7.What is the process for return or replacement of BSS138N E6433?

All BSS138N E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSS138N E6433, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS138N E6433 part is unused and in its original packaging.

Return procedure for BSS138N E6433:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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