Infineon Technologies BSS138NL6433HTMA1
- Part No.:
- BSS138NL6433HTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS138NL6433HTMA1.pdf
- Description:
- MOSFET N-CH 60V 230MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,465
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Product details
Overview
BSS138NL6433HTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS® small-signal MOSFET in PG-SOT-23 package, rated for 60 V VDS, 0.23 A continuous drain current, and 3.5 Ω max RDS(on) at VGS = 4.5 V. It is AEC-Q101 qualified, dv/dt rated (6 kV/µs), and RoHS/halogen-free compliant - deployed in automotive body electronics for low-side load switching.
For engineers reviewing the BSS138NL6433HTMA1 datasheet, BSS138NL6433HTMA1 pinout, BSS138NL6433HTMA1 application, or BSS138NL6433HTMA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 0.6–1.4 V), thermal resistance (RthJA = 350 K/W), reverse diode recovery (trr = 9.1–14.5 ns), and AEC-Q101 qualification for under-hood use.
Technical Context
This discrete MOSFET operates in enhancement mode with a threshold voltage range of 0.6–1.4 V, enabling direct interface with 3.3 V and 5 V logic controllers without level-shifting. Its dv/dt immunity (6 kV/µs) supports robust operation in noisy automotive environments where inductive load switching induces rapid voltage transients.
The device integrates a monolithic body diode with 0.83–1.2 V forward voltage at 0.23 A and 9.1–14.5 ns reverse recovery time, allowing efficient freewheeling in relay drivers and LED matrix multiplexers without external catch diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V automotive systems with margin against load-dump transients |
| RDS(on) max | 3.5 Ω at VGS = 4.5 V - enables <100 mW conduction loss at 0.23 A, suitable for space-constrained PCBs |
| ID cont | 0.23 A at TA = 25 °C - sufficient for driving small solenoids, LEDs, and sensor bias circuits |
| VGS(th) | 0.6–1.4 V - ensures reliable turn-on with 3.3 V microcontroller GPIOs |
| trr | 9.1–14.5 ns - minimizes switching losses and EMI during high-frequency PWM dimming |
| dv/dt rating | 6 kV/µs - prevents false triggering in high-noise engine control modules |
| Qg | 1.0–1.4 nC - allows fast switching with low gate-drive power (<10 µW at 10 kHz) |
Pinout & Package
Package: PG-SOT-23 (JEDEC TO-236AB), 3-pin surface-mount with standard footprint per Infineon outline drawing Rev. 2.86.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Reference node for gate control and current return path | Connected to ground or low-side common; defines VGS reference and carries full load current |
| 2 (Gate) | Control electrode for channel formation | High-impedance input requiring minimal drive current; logic-level compatible down to 3.3 V |
| 3 (Drain) | Output terminal for switched load connection | Connects to positive rail or inductive load; withstands 60 V and handles transient energy via integrated body diode |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive temperature range (−55 °C to +150 °C) and mechanical stress requirements |
| Logic-level gate drive | VGS(th) ≤ 1.4 V ensures full enhancement with 3.3 V MCU outputs without external level shifters |
| dv/dt immunity | 6 kV/µs rating prevents spurious turn-on during inductive kickback in motor and relay circuits |
| Integrated body diode | 0.23 A continuous forward current and 9.1 ns trr support freewheeling in PWM-driven loads |
| Pb-free & halogen-free | Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21 for eco-conscious automotive manufacturing |
Applications
| Automotive Door Module | LED Matrix Display Driver |
|---|---|
Use Scenario: Switching individual door lock actuators and interior lighting circuits in centralized body control units. IC Role / Device Role / Timing Role: Low-side switch controlling 12 V resistive/inductive loads with pulse-width modulation for soft-start sequencing. Use Value: AEC-Q101 qualification and 6 kV/µs dv/dt immunity ensure reliability across vehicle lifecycle under vibration and thermal cycling. | Use Scenario: Row/column multiplexing in segmented automotive instrument cluster displays using constant-current LED strings. IC Role / Device Role / Timing Role: High-speed low-side switch enabling >1 kHz scanning with minimal dead-time distortion. Use Value: 9.1 ns reverse recovery time and 1.4 nC total gate charge reduce cross-conduction losses and improve display contrast uniformity. |
| Industrial Sensor Interface | USB-C Power Path Control |
Use Scenario: Enabling/disabling analog sensor bias supplies (e.g., pressure, humidity) in programmable logic controllers. IC Role / Device Role / Timing Role: Precision on/off control of 3.3 V or 5 V bias rails with sub-millisecond response and low leakage (<0.1 µA off-state). Use Value: 0.1 µA ID(off) at 25 °C and 5 µA at 150 °C preserves system standby current budget in battery-backed applications. | Use Scenario: Controlling VBUS path between USB-C port and internal 5 V rail during plug insertion/removal events. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-RDS(on) power switch with integrated body diode for automatic forward conduction. Use Value: 3.5 Ω RDS(on) at 4.5 V gate drive limits voltage drop to <175 mV at 50 mA, meeting USB PD specification ripple limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H400SFD-13 | RDS(on) = 3.0 Ω max at VGS = 4.5 V; higher ID = 0.3 A; same PG-SOT-23 package | Slightly higher current capability but no AEC-Q101 qualification | Preferred for industrial non-automotive designs needing margin on ID and RDS(on) |
| BS170 | VDS = 60 V; RDS(on) = 5.0 Ω min at VGS = 10 V; not logic-level (VGS(th) = 0.8–3.0 V); TO-92 package | Requires 10 V gate drive; unsuitable for 3.3 V logic; through-hole only | Only viable for legacy through-hole prototyping with 5 V or higher gate supply |
Compared with DMN10H400SFD-13 and BS170, BSS138NL6433HTMA1 uniquely combines AEC-Q101 qualification, logic-level operation, SOT-23 footprint, and dv/dt immunity - making it the sole choice for production automotive low-side switching where reliability and board space are co-constrained.
Availability
BSS138NL6433HTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, LED display drivers, industrial sensor interfaces, and USB-C power path control requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSS138NL6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The SIPMOS® small-signal transistor product line targets high-reliability, logic-compatible switching in automotive and industrial applications where AEC-Q101 compliance, thermal robustness, and fast switching are essential.
FAQ
Is BSS138NL6433HTMA1 suitable for 3.3 V microcontroller GPIO direct drive?
Yes. With a gate threshold voltage range of 0.6–1.4 V and guaranteed turn-on at VGS = 3.3 V, this MOSFET fully enhances at standard 3.3 V logic levels. Its 3.5 Ω RDS(on) at 4.5 V ensures low conduction loss even when driven from 3.3 V with marginal overdrive.
What is the maximum junction temperature and how does it affect continuous current rating?
The absolute maximum junction temperature is +150 °C. At ambient temperatures above 70 °C, the continuous drain current derates linearly from 0.23 A to 0.18 A due to thermal resistance (RthJA = 350 K/W). Derating must be applied per Figure 2 in Rev. 2.86 datasheet.
Does BSS138NL6433HTMA1 include an integrated body diode, and what are its key parameters?
Yes. It features a monolithic parasitic body diode rated for 0.23 A continuous forward current, 0.83–1.2 V forward voltage at 0.23 A and 25 °C, and 9.1–14.5 ns reverse recovery time. This enables freewheeling in inductive loads without external diodes.
How does the dv/dt rating of 6 kV/µs impact circuit layout and snubber design?
This rating means the device resists false turn-on during rapid voltage transients up to 6 kV/µs. Layout should minimize source inductance (short, wide traces) and avoid floating gate nodes; no external snubber is required for typical 12 V/48 V automotive inductive loads per Infineon application note AN2015-04.
BSS138NL6433HTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS138NL6433HTMA1 FAQ
1.How can I place an order for BSS138NL6433HTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS138NL6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of BSS138NL6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138NL6433HTMA1 is usually 5 days.
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6.How does Aetrix verify that BSS138NL6433HTMA1 is sourced from the original manufacturer or authorized distributors?
All BSS138NL6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138NL6433HTMA1 meets industry standards.
7.What is the process for return or replacement of BSS138NL6433HTMA1?
All BSS138NL6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS138NL6433HTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS138NL6433HTMA1 part is unused and in its original packaging.
Return procedure for BSS138NL6433HTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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