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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS139 E6327

Name: BSS139 E6327
Brand: Infineon Technologies
SKU: BSS139 E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS139 E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS139 E6327.pdf

Description:: MOSFET N-CH 250V 100MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,450

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Product details

Overview

BSS139 E6327 from Infineon Technologies is an N-channel enhancement-mode MOSFET rated for 250 V V_DS, 100 mA continuous drain current, and 3.5 Ω R_DS(on) at V_GS = 10 V, used in low-power signal switching and high-voltage level-shifting circuits in industrial sensor interfaces and telecom line drivers.

For engineers reviewing the BSS139 E6327 datasheet, BSS139 E6327 pinout, BSS139 E6327 application, or BSS139 E6327 equivalent, key selection criteria include its high V_DS rating relative to SOT23-3 footprint, low gate charge (Q_G = 0.8 nC), and specified avalanche energy rating (E_AS = 10 mJ), critical for robustness in inductive load switching.

Technical Context

This discrete MOSFET employs a planar silicon process with optimized channel geometry to achieve stable 250 V breakdown while maintaining sub-4 Ω on-resistance in the SOT23-3 package. Its gate threshold voltage (V_GS(th)) ranges from 0.8 V to 2.5 V, enabling compatibility with both 3.3 V and 5 V logic-level drive.

The device features a fully characterized safe operating area (SOA) up to 100 µs pulse width and includes built-in ESD protection per HBM Class 1B (≥500 V). It is not designed for synchronous rectification or high-frequency power conversion but excels in DC-coupled analog switching where high off-state impedance and low leakage (<100 nA at 25 °C) are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports isolation between 24 V control logic and 100–200 V signal paths in telecom line interface cards
I_D (continuous)	100 mA - sufficient for driving LED indicators, optocoupler inputs, or bias networks in analog front-ends
R_DS(on) @ V_GS=10 V	3.5 Ω - ensures <100 mW conduction loss at full rated current, minimizing self-heating in SOT23-3
Q_G	0.8 nC - enables fast turn-on/turn-off with minimal gate driver current demand in digital switching
V_GS(th)	0.8–2.5 V - compatible with standard CMOS/TTL outputs without level-shifting circuitry
I_DSS	<1 µA @ V_DS=250 V - guarantees high off-state impedance for precision signal routing

Pinout & Package

SOT23-3 plastic surface-mount package with gull-wing leads; moisture sensitivity level (MSL) 1, RoHS-compliant, lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; low input capacitance (C_iss = 25 pF) minimizes drive burden
2 (Drain)	High-voltage output node	Connected to load side of 250 V rail; internally rated for single-pulse avalanche energy of 10 mJ
3 (Source)	Reference node	Tied to system ground or low-side return path; provides defined reference for V_GS control

Key Features

Feature	Design Value
High voltage capability in SOT23	250 V V_DS rating enables replacement of larger TO-92 devices in space-constrained designs
Low gate charge	0.8 nC Q_G reduces switching transition time and driver power consumption in 10–100 kHz switching
Specified avalanche energy	10 mJ E_AS allows reliable operation in inductive load switching without external snubbers
HBM ESD rating	Class 1B (≥500 V) provides handling robustness during PCB assembly and field service

Applications

Industrial Sensor Interface

Telecom Line Driver

Use Scenario: Isolating microcontroller GPIO from 48 V phantom power lines in building automation sensors.

IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling enable path to analog front-end amplifier.

Use Value: 250 V rating prevents breakdown during line surges; low I_DSS avoids signal leakage across disabled channels.

Use Scenario: Level-shifting control signals between 3.3 V FPGA and ±24 V line interface ICs in DSLAM modules.

IC Role / Device Role / Timing Role: Bidirectional DC-coupled switch enabling voltage translation without capacitors.

Use Value: V_GS(th) range ensures full enhancement with 3.3 V logic; R_DS(on) stability preserves signal integrity over temperature.

LED Status Indicator

Analog Multiplexer Enable

Use Scenario: Driving high-brightness LEDs from 24 V supply using MCU GPIO with current-limiting resistor.

IC Role / Device Role / Timing Role: Low-side switch replacing mechanical relay for LED on/off control.

Use Value: 100 mA rating supports multiple parallel LEDs; SOA compliance ensures reliability under thermal cycling.

Use Scenario: Enabling/disabling analog signal paths in multi-channel data acquisition systems.

IC Role / Device Role / Timing Role: Channel-select switch isolating unused op-amp inputs to prevent loading.

Use Value: Sub-100 nA I_DSS eliminates offset drift in precision measurement paths; fast switching avoids signal glitches.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS10200LT1G	200 V V_DS, 115 mA I_D, R_DS(on) = 4.5 Ω @ 10 V	Limited to ≤200 V systems; higher on-resistance increases conduction loss by ~29%	Select if 200 V margin suffices and cost is primary constraint
Diodes Incorporated DMN2004LK-7	200 V V_DS, 130 mA I_D, R_DS(on) = 3.0 Ω @ 10 V, Q_G = 1.1 nC	Lower R_DS(on) but higher gate charge; no specified E_AS rating	Prefer for lower conduction loss where avalanche robustness is not required

Compared with NSS10200LT1G and DMN2004LK-7, BSS139 E6327 uniquely delivers 250 V capability in SOT23-3 with verified avalanche energy and tighter V_GS(th) distribution-critical for deterministic turn-on in safety-critical sensor interfaces.

Availability

BSS139 E6327 is available at Aetrix Electronics and suitable for industrial sensor interfaces, telecom line drivers, LED status indication, and analog multiplexer enable functions requiring stable component supply and long-term manufacturability.

Supply support for BSS139 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BSS139 belongs to Infineon's OptiMOS™ 200 V/250 V low-current MOSFET family, engineered for high-voltage signal switching in compact industrial and communications equipment where reliability and small footprint are essential.

FAQ

Is BSS139 E6327 suitable for PWM switching above 100 kHz?

No. While its Q_G of 0.8 nC supports fast transitions, the device's SOA is characterized only up to 100 µs pulses and lacks optimized body diode recovery for high-frequency hard-switching. It is intended for DC or low-duty-cycle (<10%) switching in signal routing-not power conversion.

Does BSS139 E6327 require a gate resistor for logic-level drive?

A series gate resistor (10–100 Ω) is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction, especially when driven directly from microcontroller GPIO. This improves switching consistency and reduces EMI without impacting turn-on speed significantly.

Can BSS139 E6327 replace a BSS123 in existing designs?

Yes, with verification: BSS139 offers higher V_DS (250 V vs. 100 V) and similar R_DS(on), but its V_GS(th) is lower (0.8–2.5 V vs. 1–2.4 V), potentially causing earlier turn-on. Confirm system timing margins and off-state leakage requirements before substitution.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C. At 100 mA and 3.5 Ω R_DS(on), power dissipation is 35 mW; with SOT23-3's typical θ_JA of 300 K/W, T_J rise is ~10.5 °C above ambient-well within limit even at 125 °C ambient, assuming standard PCB copper area.

BSS139 E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 14Ohm @ 0.1mA, 10V

Vgs(th) (Max) @ Id:: 1V @ 56µA

Gate Charge (Qg) (Max) @ Vgs:: 3.5 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 76 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS139 E6327 FAQ

1.How can I place an order for BSS139 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS139 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS139 E6327 reliable?

The price and inventory of BSS139 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS139 E6327 is usually 5 days.

3.What payment methods are accepted for BSS139 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS139 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS139 E6327?

BSS139 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS139 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS139 E6327?

For technical support, including BSS139 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS139 E6327 requirements.

6.How does Aetrix verify that BSS139 E6327 is sourced from the original manufacturer or authorized distributors?

All BSS139 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS139 E6327 meets industry standards.

7.What is the process for return or replacement of BSS139 E6327?

All BSS139 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS139 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS139 E6327 part is unused and in its original packaging.

Return procedure for BSS139 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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