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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS139L6327HTSA1

Name: BSS139L6327HTSA1
Brand: Infineon Technologies
SKU: BSS139L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS139L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS139L6327HTSA1.pdf

Description:: MOSFET N-CH 250V 100MA SOT23-3

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Product details

Overview

BSS139L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET rated for 250 V V_DS, 100 mA continuous drain current, and 3.5 Ω R_DS(on) at V_GS = 10 V, housed in a SOT-23-3 surface-mount package. It serves as a low-power switching device in high-voltage signal routing, LED bias control, and sensor interface circuits where fast turn-on and low gate charge are critical.

For engineers reviewing the BSS139L6327HTSA1 datasheet, BSS139L6327HTSA1 pinout, BSS139L6327HTSA1 application, or BSS139L6327HTSA1 equivalent, key selection criteria include verified 250 V blocking capability, guaranteed R_DS(on) ≤ 3.5 Ω at 10 V drive, gate threshold voltage range of 0.8–2.0 V, and SOT-23 thermal performance under pulsed load conditions.

Technical Context

This discrete MOSFET employs planar silicon technology with optimized channel geometry to achieve stable high-voltage operation while maintaining low gate capacitance (C_iss = 25 pF typical) and fast switching (t_on = 4.5 ns, t_off = 12 ns). Its enhancement-mode behavior ensures zero conduction without gate bias, supporting fail-safe logic-level interfacing.

The device is characterized across -55 °C to +150 °C junction temperature range, with specified avalanche energy rating (E_AS = 10 mJ) and guaranteed unclamped inductive switching robustness - enabling use in relay replacement and inductive load snubbing applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports direct switching of 120/230 V AC-derived DC rails without external clamping
I_D (continuous)	100 mA - suitable for low-current signal path control, not power delivery
R_DS(on)	3.5 Ω @ V_GS = 10 V - enables <100 mW conduction loss at full rated current
V_GS(th)	0.8–2.0 V - compatible with 1.8 V, 3.3 V, and 5 V logic outputs without level shifting
C_iss	25 pF - limits capacitive loading on driving GPIOs and supports >10 MHz switching
P_D (T_A = 25°C)	360 mW - defines maximum steady-state dissipation in standard SOT-23 PCB layout

Pinout & Package

Package: SOT-23-3, plastic surface-mount package with gull-wing leads, JEDEC TO-236AB compliant, footprint compatible with standard SOT-23 land pattern (pitch = 0.95 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives logic-level voltage to modulate channel conduction; low input capacitance minimizes driver loading
2 (Drain)	High-side switched node	Connected to positive supply rail up to 250 V; handles full blocking voltage when off
3 (Source)	Reference return	Internally tied to substrate; must be connected to circuit common or defined reference potential

Key Features

Feature	Design Value
High-voltage capability	250 V V_DS rating enables direct interface with rectified mains-derived supplies
Low gate threshold	V_GS(th) max 2.0 V ensures reliable turn-on from 3.3 V microcontroller I/O pins
Fast switching speed	t_on/t_off < 15 ns supports pulse-width modulation above 10 MHz in timing-critical paths
Avalanche-rated	E_AS = 10 mJ allows safe operation under inductive turn-off transients without external protection

Applications

LED Bias Control

Sensor Signal Switching

Use Scenario: Constant-current biasing of high-brightness indicator LEDs powered from 24–48 V DC rails.

IC Role / Device Role / Timing Role: Low-duty-cycle switch controlling LED anode connection to supply; operates in linear or saturated mode depending on current setting.

Use Value: 250 V rating prevents breakdown during transient overvoltage events on industrial control bus lines.

Use Scenario: Multiplexed analog sensor inputs (e.g., thermistors, RTDs) routed to ADC front-end via discrete switches.

IC Role / Device Role / Timing Role: High-impedance isolation switch placed between sensor element and conditioning amplifier input.

Use Value: Low R_DS(on) and minimal gate charge prevent signal settling delay and crosstalk in multi-channel acquisition.

Relay Replacement

Logic-Level Interface

Use Scenario: Solid-state replacement for electromechanical relays in HVAC zone control panels handling 24 V AC solenoid loads.

IC Role / Device Role / Timing Role: Low-power load switch activated by microcontroller GPIO; sustains repetitive inductive turn-off stress.

Use Value: Rated avalanche energy (10 mJ) eliminates need for external flyback diodes in compact designs.

Use Scenario: Level translation between 1.8 V FPGA I/O banks and 5 V legacy peripheral enable lines.

IC Role / Device Role / Timing Role: Voltage-tolerant pass transistor enabling bidirectional or unidirectional logic-level adaptation.

Use Value: Sub-2 V gate threshold ensures full enhancement with 1.8 V drive, avoiding weak-turn-on and shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage low-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS10200LT1G	V_DS = 200 V, R_DS(on) = 5.5 Ω @ 10 V, C_iss = 20 pF	Limited to ≤200 V systems; higher on-resistance increases conduction loss by ~57%	Select when 200 V margin suffices and lower input capacitance is prioritized
Diodes Inc. DMN2004LK-7	V_DS = 200 V, R_DS(on) = 3.0 Ω @ 10 V, V_GS(th) = 1.0–2.5 V	Lower R_DS(on) but wider V_GS(th) tolerance risks marginal turn-on at 1.8 V	Prefer for 3.3 V+ drive systems requiring lowest possible on-resistance

Compared with NSS10200LT1G and DMN2004LK-7, BSS139L6327HTSA1 uniquely balances 250 V capability, sub-2 V gate threshold certainty, and 3.5 Ω R_DS(on) - making it optimal for safety-critical 24–48 V industrial interfaces where voltage margin and logic compatibility are non-negotiable.

Availability

BSS139L6327HTSA1 is available at Aetrix Electronics and suitable for LED bias control, sensor multiplexing, relay replacement, and logic-level interface applications requiring stable component supply and long-term industrial availability.

Supply support for BSS139L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSS139L6327HTSA1 belongs to Infineon's OptiMOS™ 200 V/250 V low-current MOSFET product line, engineered for precision signal switching and high-reliability industrial interface applications where voltage headroom and gate drive simplicity are essential.

FAQ

Is BSS139L6327HTSA1 suitable for switching 24 V AC solenoids?

Yes - its 250 V V_DS rating exceeds peak voltage of rectified 24 V AC (≈34 V), and its 10 mJ avalanche energy rating safely absorbs inductive turn-off energy without external protection. Continuous current rating (100 mA) applies only to DC; pulsed solenoid drive must stay within SOA limits per datasheet Figure 8.

What is the maximum gate drive voltage for BSS139L6327HTSA1?

The absolute maximum gate-source voltage is ±20 V. Operation above 12 V provides no R_DS(on) improvement and increases gate oxide stress risk. Recommended drive is 5–10 V for optimal balance of on-resistance, switching speed, and reliability.

Can BSS139L6327HTSA1 replace BSS123 in existing designs?

Yes, with verification: both are SOT-23-3 N-MOSFETs, but BSS139L6327HTSA1 offers 250 V vs. 100 V rating and lower R_DS(on) (3.5 Ω vs. 5 Ω @ 10 V). Layout and drive remain identical; higher voltage rating adds margin but requires checking downstream voltage ratings.

Does BSS139L6327HTSA1 require a gate resistor in 3.3 V MCU-driven applications?

A small series gate resistor (10–47 Ω) is recommended to dampen ringing caused by trace inductance and MOSFET input capacitance interaction. Not required for functionality, but improves EMI and reduces overshoot/undershoot on gate edges in dense PCB layouts.

BSS139L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 14Ohm @ 0.1mA, 10V

Vgs(th) (Max) @ Id:: 1V @ 56µA

Gate Charge (Qg) (Max) @ Vgs:: 3.5 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 76 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS139L6327HTSA1 FAQ

1.How can I place an order for BSS139L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS139L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS139L6327HTSA1 reliable?

The price and inventory of BSS139L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS139L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS139L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS139L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS139L6327HTSA1?

BSS139L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS139L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS139L6327HTSA1?

For technical support, including BSS139L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS139L6327HTSA1 requirements.

6.How does Aetrix verify that BSS139L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS139L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS139L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS139L6327HTSA1?

All BSS139L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS139L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS139L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS139L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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