Infineon Technologies BSS139L6906HTSA1
- Part No.:
- BSS139L6906HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS139L6906HTSA1.pdf
- Description:
- MOSFET N-CH 250V 100MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:2,007
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Product details
Overview
BSS139L6906HTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET rated for 250 V VDS, 100 mA continuous drain current, and 3.5 Ω RDS(on) at VGS = 10 V, housed in a SOT-23-3 surface-mount package. It serves as a low-power switching device in high-voltage signal routing, LED bias control, and sensor interface circuits where compact size and voltage tolerance are critical.
For engineers reviewing the BSS139L6906HTSA1 datasheet, BSS139L6906HTSA1 pinout, BSS139L6906HTSA1 application, or BSS139L6906HTSA1 equivalent, key selection criteria include verified RDS(on) at 10 V gate drive, guaranteed 250 V breakdown margin, SOT-23 thermal derating behavior, and gate threshold compatibility with 3.3 V/5 V logic-level microcontrollers.
Technical Context
This discrete MOSFET operates in enhancement mode with a typical gate threshold voltage (VGS(th)) of 1.4 V and maximum of 2.5 V, enabling direct drive from standard digital outputs. Its 250 V VBR(DSS) rating supports operation in off-line auxiliary supplies and industrial sensor front-ends where transient overvoltage immunity is required.
The device features a specified total gate charge (Qg) of 1.7 nC at VGS = 10 V and output capacitance (Coss) of 12 pF at VDS = 25 V, supporting efficient low-frequency switching up to ~100 kHz without significant gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 250 V - Withstands sustained DC or peak repetitive voltages up to this level in blocking state. |
| ID Continuous | 100 mA - Maximum DC drain current at TA = 25 °C with PCB copper area per JEDEC Std 51-3. |
| RDS(on) | 3.5 Ω @ VGS = 10 V - On-resistance determines conduction loss in linear or saturated switching operation. |
| VGS(th) | 1.4 V (typ), 2.5 V (max) - Gate voltage at which device begins conducting; defines minimum logic-compatible drive level. |
| Qg | 1.7 nC @ VGS = 10 V - Total gate charge required for full turn-on; impacts switching speed and driver sizing. |
| Coss | 12 pF @ VDS = 25 V - Output capacitance affects turn-off energy and high-frequency ringing behavior. |
Pinout & Package
Package: SOT-23-3 - Plastic surface-mount package with 1.3 mm height, 2.9 mm length, and 1.3 mm width; optimized for automated placement and reflow soldering on dense PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives voltage signal to modulate channel conductivity; high-impedance input requiring minimal drive current. |
| 2 (Drain) | High-side current path | Connected to higher-potential node (e.g., supply rail); sustains full VDS during off-state. |
| 3 (Source) | Reference terminal | Common return path for drain current; tied to ground or low-side reference in most configurations. |
Key Features
| Feature | Design Value |
|---|---|
| High voltage capability | 250 V VBR(DSS) enables use in 120/230 V AC-derived auxiliary rails without external clamping. |
| Logic-level gate drive | VGS(th) ≤ 2.5 V ensures reliable turn-on with 3.3 V MCU GPIO without level-shifting circuitry. |
| Low gate charge | 1.7 nC Qg reduces switching losses and simplifies gate driver design for low-duty-cycle applications. |
| SOT-23 thermal performance | RθJA = 350 K/W allows 100 mA operation with <10 °C junction rise above ambient on standard FR-4. |
Applications
| LED Bias Control | Sensor Signal Switching |
|---|---|
Use Scenario: Constant-current biasing of indicator LEDs in industrial HMI panels operating from 24 V DC rails. IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-rail current path with precise on/off timing. Use Value: 250 V rating provides margin against load-dump transients; 100 mA rating matches typical panel LED string requirements. | Use Scenario: Multiplexed analog sensor inputs (e.g., thermistors, RTDs) routed to a single ADC channel in PLC modules. IC Role / Device Role / Timing Role: Analog switch isolating individual sensor elements during measurement cycles. Use Value: Low RDS(on) minimizes voltage drop error; SOT-23 footprint enables dense sensor array layout. |
| Off-Line Auxiliary Supply | Microcontroller I/O Protection |
Use Scenario: High-side switch in flyback auxiliary winding rectification for 5 V standby power in AC/DC adapters. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for Schottky diode in low-power auxiliary output stage. Use Value: 250 V VDS withstands reflected primary-side spikes; low Qg supports 65–100 kHz switching. | Use Scenario: Input protection switch between external field sensors and MCU GPIO pins exposed to ESD-prone environments. IC Role / Device Role / Timing Role: Series isolation element that disconnects faulty inputs during fault detection or power-down sequences. Use Value: Logic-level gate drive allows direct MCU control; 3.5 Ω RDS(on) introduces negligible offset in protected analog paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-current high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS1C200MZ4T1G | VDS = 200 V, RDS(on) = 5.5 Ω @ 10 V, Qg = 1.4 nC | Limited to ≤200 V systems; higher on-resistance increases conduction loss at 100 mA. | Select when 200 V margin suffices and lower gate charge is prioritized over voltage rating. |
| Vishay SI2301ADS-T1-BE3 | VDS = 20 V, RDS(on) = 0.13 Ω @ 4.5 V, Qg = 3.5 nC | Not suitable for >20 V applications; optimized for battery-powered logic-level loads. | Reject for 250 V use cases; only applicable in low-voltage portable electronics. |
Compared with NSS1C200MZ4T1G and SI2301ADS-T1-BE3, BSS139L6906HTSA1 uniquely balances 250 V capability with logic-level gate drive and sub-4 Ω on-resistance-making it irreplaceable in 24–48 V industrial auxiliary and sensor-switching designs requiring robust overvoltage tolerance.
Availability
BSS139L6906HTSA1 is available at Aetrix Electronics and suitable for LED bias control, sensor multiplexing, off-line auxiliary supplies, and microcontroller I/O protection requiring stable component supply across extended production lifecycles.
Supply support for BSS139L6906HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial discrete devices with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
BSS139L6906HTSA1 belongs to Infineon's OptiMOS™ 200 V/250 V low-current MOSFET family, engineered for space-constrained industrial and building automation systems demanding high-voltage resilience and logic-compatible drive.
FAQ
Is BSS139L6906HTSA1 suitable for 24 V DC industrial control applications?
Yes. With 250 V VDS rating and 100 mA continuous current, it safely handles 24 V nominal rails plus common transients (e.g., ISO 7637-2 Pulse 1/2b). Its 3.5 Ω RDS(on) yields only 2.4 mW conduction loss at 100 mA, making it ideal for low-power switching in PLC I/O modules and HMI backlight drivers.
What is the maximum recommended gate drive voltage for BSS139L6906HTSA1?
The absolute maximum gate-source voltage is ±20 V per Infineon's datasheet. For reliable long-term operation, gate drive should be limited to 10 V - the condition under which RDS(on), Qg, and switching parameters are characterized. Exceeding 12 V offers diminishing RDS(on) improvement while increasing gate oxide stress risk.
Can BSS139L6906HTSA1 replace a standard 2N7002 in high-voltage circuits?
No. While both are SOT-23 N-channel MOSFETs, the 2N7002 has only 60 V VDS rating. BSS139L6906HTSA1 provides 4× higher breakdown voltage (250 V), making it non-interchangeable in circuits with >60 V potential - such as off-line auxiliary supplies or 48 V PoE-powered sensor nodes.
Does BSS139L6906HTSA1 require a gate resistor in typical switching applications?
A gate resistor is recommended for EMI control and ringing suppression, especially when driving inductive loads. A 10–47 Ω series resistor limits dV/dt and prevents oscillation without significantly degrading 1.7 nC Qg-driven switching speed at ≤100 kHz. No resistor is needed for static on/off control of LEDs or resistive sensors.
BSS139L6906HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel, Depletion Mode
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 0V, 10V
- Rds On (Max) @ Id, Vgs:
- 14Ohm @ 0.1mA, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.5 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 76 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS139L6906HTSA1 FAQ
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Please submit a Request for Quotation (RFQ) for BSS139L6906HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BSS139L6906HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS139L6906HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS139L6906HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS139L6906HTSA1?
All BSS139L6906HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS139L6906HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS139L6906HTSA1 part is unused and in its original packaging.
Return procedure for BSS139L6906HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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