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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS159N E6327

Name: BSS159N E6327
Brand: Infineon Technologies
SKU: BSS159N E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS159N E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS159N E6327.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,540

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Product details

Overview

BSS159N E6327 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in SOT-23 package, rated for 60 V V_DS, 8 Ω max R_DS(on) at V_GS = 0 V, and 130 mA I_DSS; used as a high-voltage constant-current source or analog switch in power management and signal routing circuits.

For engineers reviewing the BSS159N E6327 datasheet, BSS159N E6327 pinout, BSS159N E6327 application, or BSS159N E6327 equivalent, key selection criteria include depletion-mode operation, dv/dt rating of 6 kV/µs, V_GS(th) banding (N-band: −3.2 to −3.0 V), reverse diode recovery time (10.4–13 ns), and thermal resistance (350 K/W).

Technical Context

This device operates in depletion mode-conducting at V_GS = 0 V and requiring negative gate bias to pinch off-enabling fail-safe "always-on" behavior in bias networks and current-source configurations. Its dv/dt rating of 6 kV/µs supports robustness against fast transients in inductive switching environments.

It integrates a monolithic body diode with 0.79–1.2 V forward voltage at 0.16 A and 10.4–13 ns reverse recovery time, enabling synchronous rectification or freewheeling in low-power DC-DC stages without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage; defines safe operating range in 24–48 V systems.
R_DS(on), max	8 Ω at V_GS = 0 V, I_D = 70 mA - sets on-state power loss (≈39 mW) and current limit in constant-current sources.
I_DSS, min	130 mA - zero-gate-bias saturation current; determines baseline conduction level for biasing and load-switching.
V_GS(th)	−3.2 to −3.0 V (N-band) - precise threshold window enables matched current sourcing across production lots.
t_rr	10.4–13 ns - fast reverse recovery supports >1 MHz switching in flyback snubbers or active clamp circuits.
dv/dt rating	6 kV/µs - validated immunity to rapid voltage transients, critical in relay drivers and motor commutation interfaces.
R_thJA	350 K/W - thermal resistance under minimal footprint; limits continuous power to 0.36 W at 25 °C ambient.

Pinout & Package

SOT-23 (PG-SOT-23) package: surface-mount, 3-pin, standard footprint per JEDEC TO-236AB; plastic body, Pb-free terminations, tape-and-reel packaging (3000 pcs/reel, E6327 designation).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal under depletion conduction	Connected to high-side node in constant-current sinks or switched HV rails; handles full I_DSS and transient energy.
2 (Source)	Reference node for gate control and current return path	Typically grounded or tied to bias reference; establishes V_GS potential and carries reverse diode current during freewheeling.
3 (Gate)	Depletion control electrode	Receives negative bias (≤ −2.4 V) to reduce I_D; high-impedance input (I_GSS ≤ 10 nA) enables simple resistor-based biasing.

Key Features

Feature	Design Value
Depletion-mode operation	Conducts at V_GS = 0 V - eliminates need for active gate drive in always-on current sources or fail-safe switches.
V_GS(th) banding (N-band)	−3.2 to −3.0 V tolerance - enables tighter current matching across units without post-manufacture sorting.
dv/dt rated	6 kV/µs - prevents spurious turn-on during high-slew-rate transients in industrial control I/O stages.
Integrated body diode	V_SD = 0.79–1.2 V at 0.16 A - supports bidirectional current flow in low-frequency AC coupling or flyback reset paths.
Pb-free & RoHS compliant	Lead-plating per MIL-STD-883 Class 0 ESD - ensures compatibility with modern assembly processes and environmental compliance requirements.

Applications

Constant-Current Bias Source

High-Voltage Analog Switch

Use Scenario: Providing stable 130 mA bias current to op-amp input stages or photodiode transimpedance amplifiers in precision sensor front-ends.

IC Role / Device Role / Timing Role: Depletion-mode current source replacing two-resistor + Zener networks; sets quiescent point independent of supply variation.

Use Value: Reduces component count by 2–3 parts while improving temperature stability (V_GS(th) drift < 10 mV/°C) and long-term drift vs. discrete resistor solutions.

Use Scenario: Routing 48 V DC signals between isolated subsystems in telecom line cards, where galvanic isolation is not required but voltage tolerance is critical.

IC Role / Device Role / Timing Role: High-side analog switch controlled by −3 V logic; blocks 60 V when off, passes full rail when gate grounded.

Use Value: Enables single-device 48 V signal routing with <1 µA leakage (I_D(off)) and no gate driver IC, reducing BOM cost and board space.

Inductive Load Snubber

Flyback Converter Freewheeling Diode

Use Scenario: Suppressing voltage spikes across relays or solenoids driven from 24 V microcontroller outputs in factory automation PLC modules.

IC Role / Device Role / Timing Role: dv/dt-rated clamp switch absorbing inductive kickback; activated by inherent conduction, no control signal needed.

Use Value: Eliminates external TVS or RC snubbers; 6 kV/µs rating ensures reliable clamping without false triggering during normal switching edges.

Use Scenario: Replacing discrete Schottky diodes in sub-5 W isolated flyback converters for IoT sensor power supplies.

IC Role / Device Role / Timing Role: Integrated body diode conducting reverse current during transformer reset phase; synchronized with MOSFET switching via shared die.

Use Value: Achieves 10.4–13 ns t_rr and 0.79 V V_SD, cutting diode conduction loss by ~30% vs. 1N5819 in same footprint, with no extra placement cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode N-channel transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	V_DS = 20 V, R_DS(on) = 3.5 Ω, enhancement-mode - requires positive gate drive, not depletion-compatible.	Only suitable for low-voltage logic-level switching; cannot replace BSS159N in zero-bias current sources.	Select only if system uses active gate control and operates ≤20 V; verify gate drive capability and thermal derating.
BS170	V_DS = 60 V, R_DS(on) ≈ 5 Ω, enhancement-mode, no dv/dt rating - lacks transient immunity and failsafe conduction.	Requires gate pull-up for default-on behavior; unsuitable for high-dv/dt environments like relay coils or motor drives.	Acceptable only in benign, low-noise DC bias applications where transient immunity is not required.

Compared with DMN2004K-7 and BS170, the BSS159N E6327 uniquely delivers depletion-mode operation, 6 kV/µs dv/dt immunity, and factory-sorted V_GS(th) bands-making it irreplaceable in fail-safe current sources and high-transient industrial interfaces.

Availability

BSS159N E6327 is available at Aetrix Electronics and suitable for constant-current biasing, high-voltage analog switching, inductive snubbing, and flyback freewheeling applications requiring stable component supply and traceable lot control.

Supply support for BSS159N E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.

The SIPMOS® small-signal transistor product line targets precision analog functions-including depletion-mode current sources, high-voltage switches, and transient-hardened interface devices-for industrial automation, telecom infrastructure, and sensor signal conditioning.

FAQ

What is the gate threshold voltage range for BSS159N E6327?

The BSS159N E6327 is sorted into V_GS(th) bands; the E6327 reel corresponds to N-band, with V_GS(th) = −3.2 V to −3.0 V at V_DS = 3 V and I_D = 26 µA. This tight binning ensures consistent current sourcing across units without calibration.

Can BSS159N E6327 be used as a replacement for a Zener diode + resistor current source?

Yes-it replaces discrete Zener/resistor networks in constant-current bias applications. With 130 mA I_DSS and <10 mV/°C V_GS(th) drift, it delivers superior temperature stability and lower part count than passive solutions, especially in 24–48 V systems.

Does BSS159N E6327 require a gate driver circuit?

No-its depletion-mode operation means it conducts fully at V_GS = 0 V. A simple pull-down resistor (e.g., 100 kΩ to −3 V) suffices for turn-off; no active gate driver is needed, simplifying design and reducing component count in fail-safe circuits.

Is the integrated body diode rated for continuous conduction?

Yes-the body diode supports 0.20 A continuous forward current (I_S) and 0.81 A pulsed current (I_S,pulse). At 0.16 A, V_SD is 0.79–1.2 V, making it suitable for low-duty-cycle freewheeling in sub-5 W flyback converters.

BSS159N E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 44 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS159N E6327 FAQ

1.How can I place an order for BSS159N E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS159N E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS159N E6327 reliable?

The price and inventory of BSS159N E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS159N E6327 is usually 5 days.

3.What payment methods are accepted for BSS159N E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS159N E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS159N E6327?

BSS159N E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS159N E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS159N E6327?

For technical support, including BSS159N E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS159N E6327 requirements.

6.How does Aetrix verify that BSS159N E6327 is sourced from the original manufacturer or authorized distributors?

All BSS159N E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS159N E6327 meets industry standards.

7.What is the process for return or replacement of BSS159N E6327?

All BSS159N E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS159N E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS159N E6327 part is unused and in its original packaging.

Return procedure for BSS159N E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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