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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS159N E6906

Name: BSS159N E6906
Brand: Infineon Technologies
SKU: BSS159N E6906
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS159N E6906

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS159N E6906.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS159N from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in SOT-23 package, rated for 60 V V_DS, 8 Ω max R_DS(on) at V_GS = 0 V, and 0.13 A min I_DSS; used as a high-dv/dt-rated load switch or constant-current source in low-power analog timing and bias circuits.

For engineers reviewing the BSS159N datasheet, BSS159N pinout, BSS159N application, or BSS159N equivalent, key selection criteria include verified depletion-mode operation, V_GS(th) band sorting (band N: −3.2 V to −3.0 V), reverse diode recovery performance (t_rr = 10.4–13 ns), and thermal resistance (R_thJA = 350 K/W).

Technical Context

This device operates in depletion mode-conducting at V_GS = 0 V and requiring negative gate voltage to pinch off-enabling self-biasing without external pull-down resistors. Its dv/dt rating of 6 kV/µs supports robust switching in noisy environments such as relay drivers or ESD-protected sensor interfaces.

It integrates a monolithic body diode with V_SD = 0.79–1.2 V at I_F = 0.16 A and Q_rr = 3.3–4.1 nC, enabling bidirectional current handling in compact DC bias networks and low-frequency flyback paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche; defines safe operating range in 24–48 V industrial control rails
R_DS(on), max	8 Ω at V_GS = 0 V, I_D = 70 mA - sets on-state power loss (P = I²R) in constant-current sink applications
I_DSS, min	0.13 A - guaranteed minimum drain current at V_GS = 0 V, critical for bias network repeatability
V_GS(th) band N	−3.2 V to −3.0 V - sorted threshold range ensures predictable turn-off voltage in precision analog switches
t_rr	10.4–13 ns - reverse recovery time under V_R = 30 V, I_F = 0.16 A, di_F/dt = 100 A/µs; limits switching frequency in diode-assisted topologies
C_iss	33–44 pF - input capacitance at V_GS = −10 V; impacts gate drive energy and high-frequency stability
R_thJA	350 K/W - junction-to-ambient thermal resistance on minimal footprint PCB; constrains continuous power dissipation to ≤360 mW at T_A = 25 °C

Pinout & Package

SOT-23 (PG-SOT-23) surface-mount package with standard 3-pin configuration: drain (pin 1), gate (pin 2), source (pin 3); lead-free, RoHS-compliant plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current output terminal	Connected to load or higher-potential rail; carries full I_D and withstands V_DS up to 60 V
Pin 2 (Gate)	Control electrode	Receives negative bias to modulate conduction; high-impedance input (I_GSS ≤ 10 nA) enables low-leakage bias networks
Pin 3 (Source)	Reference and current return path	Typically tied to ground or common reference; forms the return path for both forward and reverse diode current

Key Features

Feature	Design Value
Depletion-mode operation	Conducts at V_GS = 0 V, eliminating need for active gate bias in always-on current sources or level shifters
V_GS(th) band sorting (N-band)	Guaranteed −3.2 V to −3.0 V threshold enables consistent turn-off across production lots in analog control loops
dv/dt immunity	Rated 6 kV/µs - suppresses false triggering during fast transients in motor control feedback or relay coil snubbing
Integrated body diode	V_SD ≤ 1.2 V at 0.16 A, t_rr ≤ 13 ns - supports bidirectional current flow without external diode in low-frequency clamp circuits
Pb-free & RoHS compliant	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles and environmental compliance programs

Applications

Constant-Current Bias Generator

High-dv/dt Relay Driver

Use Scenario: Stable current source for LED biasing or op-amp reference current in battery-powered instrumentation.

IC Role / Device Role / Timing Role: Depletion-mode transistor acting as self-regulating current sink with fixed I_DSS and temperature-stable R_DS(on).

Use Value: Eliminates external bias resistor and reduces component count while maintaining ±5% current accuracy over −40 °C to +125 °C.

Use Scenario: Driving electromagnetic relays in PLC I/O modules exposed to inductive kickback and EMI.

IC Role / Device Role / Timing Role: High-dv/dt-rated switch controlling relay coil with integrated flyback path via body diode.

Use Value: Prevents false turn-on during 6 kV/µs transients; t_rr < 13 ns avoids latch-up in 100 Hz–1 kHz switching cycles.

Analog Level Shifter

ESD-Protected Sensor Interface

Use Scenario: Translating logic-level signals between mixed-voltage domains (e.g., 3.3 V MCU to 5 V analog front-end).

IC Role / Device Role / Timing Role: Depletion-mode FET configured as voltage-controlled resistor or cascode element in level translation path.

Use Value: Enables rail-to-rail signal swing without level-shifting ICs; V_GS(th) banding ensures predictable threshold alignment across batches.

Use Scenario: Front-end protection and signal conditioning for thermistor or RTD inputs in industrial sensors.

IC Role / Device Role / Timing Role: Low-leakage (I_D(off) ≤ 0.1 µA at 25 °C) depletion-mode switch isolating sensor node during fault conditions.

Use Value: Maintains measurement integrity under ESD stress (Class 0 HBM); R_DS(on) stability ensures <0.5% gain drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	V_DS = 20 V, R_DS(on) = 3.5 Ω max, enhancement-mode	Requires positive gate drive; unsuitable for zero-bias current sources	Select only if circuit supports active gate bias and lower voltage operation is acceptable
BSS138	V_DS = 50 V, R_DS(on) = 3.5 Ω max, enhancement-mode, no V_GS(th) sorting	Lacks depletion-mode behavior and dv/dt rating; not suitable for self-biasing or high-noise environments	Use only in low-noise digital switching where gate drive is available and V_DS < 50 V

Compared with DMN2004LKQ-7 and BSS138, the BSS159N uniquely delivers verified depletion-mode operation, factory-sorted V_GS(th) bands, and 6 kV/µs dv/dt immunity-making it irreplaceable in zero-bias analog current sources and high-transient relay interfaces.

Availability

BSS159N is available at Aetrix Electronics and suitable for constant-current bias generators, high-dv/dt relay drivers, and analog level shifters requiring stable component supply and traceable lot-level V_GS(th) banding.

Supply support for BSS159N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The BSS159N belongs to Infineon's SIPMOS® small-signal transistor product line, designed specifically for precision analog biasing, noise-immune switching, and compact depletion-mode circuitry in space-constrained industrial and sensor applications.

FAQ

What does the 'N' suffix in BSS159N indicate?

The 'N' denotes the V_GS(th) threshold voltage band: −3.2 V to −3.0 V at V_DS = 3 V and I_D = 26 µA. Each reel is labeled with its band letter (J–N), and band N is selected for tighter turn-off consistency in analog control circuits.

Can BSS159N be used as a replacement for enhancement-mode MOSFETs like 2N7002?

No-BSS159N is depletion-mode and conducts at V_GS = 0 V, whereas 2N7002 is enhancement-mode and requires +2.5 V gate drive. Substituting them would invert logic states and risk unintended conduction; circuit topology must be redesigned for depletion-mode operation.

Is the integrated body diode rated for continuous conduction?

Yes-the reverse diode supports I_S = 0.20 A continuous forward current at T_A = 25 °C. Derating applies per thermal limits: at 70 °C ambient, max continuous diode current drops to ~0.18 A due to P_tot constraint and R_thJA = 350 K/W.

Does BSS159N require gate protection resistors in typical applications?

Not typically-its gate-source leakage is ≤10 nA and ESD rating is Class 0 (HBM), but a 10–100 kΩ series resistor is recommended when driving from high-impedance nodes to limit transient current during fast dv/dt events and improve long-term reliability in industrial environments.

BSS159N E6906 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 44 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS159N E6906 FAQ

1.How can I place an order for BSS159N E6906 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS159N E6906 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS159N E6906 reliable?

The price and inventory of BSS159N E6906 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS159N E6906 is usually 5 days.

3.What payment methods are accepted for BSS159N E6906?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS159N E6906 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS159N E6906?

BSS159N E6906 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS159N E6906 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS159N E6906?

For technical support, including BSS159N E6906 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS159N E6906 requirements.

6.How does Aetrix verify that BSS159N E6906 is sourced from the original manufacturer or authorized distributors?

All BSS159N E6906 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS159N E6906 meets industry standards.

7.What is the process for return or replacement of BSS159N E6906?

All BSS159N E6906 units undergo pre-shipment inspection (PSI). If there is an issue with BSS159N E6906, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS159N E6906 part is unused and in its original packaging.

Return procedure for BSS159N E6906:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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