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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS159NH6327XTSA1

Name: BSS159NH6327XTSA1
Brand: Infineon Technologies
SKU: BSS159NH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS159NH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS159NH6327XTSA1.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS159NH6327XTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in SOT-23 package, rated for 60 V V_DS, 8 Ω max R_DS(on) at V_GS = 0 V, and 0.13 A min I_DSS; used as a high-dv/dt-rated load switch or constant-current source in low-power analog timing and bias circuits.

For engineers reviewing the BSS159NH6327XTSA1 datasheet, BSS159NH6327XTSA1 pinout, BSS159NH6327XTSA1 application, or BSS159NH6327XTSA1 equivalent, key selection criteria include verified V_GS(th) banding (L-band: −2.9 to −2.7 V), dv/dt immunity (6 kV/µs), reverse diode recovery (t_rr = 10.4–13 ns), and thermal resistance (R_thJA = 350 K/W).

Technical Context

This device operates in depletion mode, conducting at V_GS = 0 V and requiring negative gate voltage to pinch off-enabling simple bias-free switching in high-side current sources or analog switches. Its dv/dt rating of 6 kV/µs ensures robustness against fast transients in inductive load interfaces.

It integrates a monolithic body diode with V_SD = 0.79–1.2 V at I_F = 0.16 A and t_rr = 10.4–13 ns, supporting synchronous rectification or flyback snubbing in low-duty-cycle signal-path applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage before avalanche breakdown
R_DS(on), max	8 Ω at V_GS = 0 V, I_D = 70 mA - defines on-resistance under zero-gate-bias operation
I_DSS, min	0.13 A at V_GS = 0 V, V_DS = 10 V - minimum saturation current for depletion-mode conduction
V_GS(th)	−2.9 to −2.7 V (L-band) - verified gate threshold range enabling predictable turn-off voltage margin
t_rr	10.4–13 ns - reverse recovery time of integrated body diode, critical for high-frequency switching stability
dv/dt rating	6 kV/µs - validated immunity to rapid voltage transients without spurious turn-on
R_thJA	350 K/W - junction-to-ambient thermal resistance on minimal footprint PCB, limiting continuous power to 0.36 W at 25 °C

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with standard footprint per Infineon Rev. 1.32.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal under depletion conduction	Connected to high-side load or supply rail; handles full I_DSS and V_DS stress
2 (Gate)	Control electrode for channel depletion	Negative voltage relative to source required to reduce I_D; no pull-up needed for default-on operation
3 (Source)	Reference node for gate control and current return path	Typically tied to ground or common reference; defines V_GS and sets diode anode polarity

Key Features

Feature	Design Value
Depletion-mode operation	Conducts at V_GS = 0 V-eliminates need for active gate bias in always-on current sources or level-shifted switches
V_GS(th) band sorting (L-band)	Guaranteed −2.9 to −2.7 V threshold enables consistent turn-off behavior across production reels
dv/dt immunity	6 kV/µs rating prevents false triggering during fast-rising edge events in motor drive or relay interface circuits
Integrated body diode	Low V_SD (0.79–1.2 V) and fast t_rr (10.4–13 ns) support bidirectional signal routing or inductive energy recirculation

Applications

Constant-Current Bias Source

High-dv/dt Load Switch

Use Scenario: Providing stable bias current to op-amp input stages or RF amplifier bias networks where supply headroom is limited.

IC Role / Device Role / Timing Role: Depletion-mode transistor acting as self-biased current sink with fixed I_DSS and temperature-stable R_DS(on).

Use Value: Eliminates external bias resistors and reduces component count while maintaining ±10% current accuracy over −55 to 125 °C.

Use Scenario: Controlling solenoid or relay coils in industrial PLC output modules exposed to fast-inductive kickback transients.

IC Role / Device Role / Timing Role: High-immunity switch isolating logic-level control from noisy inductive loads.

Use Value: 6 kV/µs dv/dt rating prevents unintended turn-on during 100 V/µs transients, improving system reliability without snubber networks.

Analog Signal Switch

Low-Power Oscillator Timing Element

Use Scenario: Routing audio or sensor signals in battery-powered instrumentation where ultra-low quiescent current is mandatory.

IC Role / Device Role / Timing Role: Normally-on switch controlled by negative gate voltage to enable/disable signal path.

Use Value: Sub-1 µA I_D(off) at V_GS = −10 V ensures near-zero leakage in off-state, preserving signal integrity and battery life.

Use Scenario: Setting frequency in relaxation oscillators or RC-timed monostables where precise I_DSS-based charging current determines period.

IC Role / Device Role / Timing Role: Constant-current source charging timing capacitor with temperature-compensated I_DSS drift.

Use Value: I_DSS variation ≤ ±15% from −55 to 125 °C enables stable timing over wide ambient ranges without trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 4.5 Ω max (V_GS = 0 V); V_DS = 20 V; not dv/dt rated	Limited to ≤20 V systems; unsuitable for 60 V transient-prone environments	Select only for low-voltage, low-dv/dt bias applications where higher I_DSS (200 mA) is beneficial
FDN304P	P-channel enhancement mode; V_DS = −20 V; requires active gate drive to conduct	Cannot replace depletion-mode function without redesign; lacks default-on behavior	Use only when circuit architecture allows active gate control and lower voltage operation

Compared with DMN2004LK-7 and FDN304P, BSS159NH6327XTSA1 uniquely delivers 60 V capability, guaranteed dv/dt immunity, and true depletion-mode operation-making it irreplaceable in high-reliability, zero-bias, medium-voltage analog switching roles.

Availability

BSS159NH6327XTSA1 is available at Aetrix Electronics and suitable for constant-current bias sources, high-dv/dt load switches, and analog signal routing applications requiring stable component supply and traceable RoHS-compliant sourcing.

Supply support for BSS159NH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949.

The SIPMOS® small-signal transistor product line targets precision analog switching, biasing, and timing functions in space-constrained, high-reliability industrial and automotive subsystems.

FAQ

What is the guaranteed V_GS(th) range for BSS159NH6327XTSA1?

This part is sorted into L-band with V_GS(th) = −2.9 V to −2.7 V at V_DS = 3 V and I_D = 26 µA. The band letter 'L' appears on the reel label, and all units on a given reel fall within this range-no individual unit sorting outside the band is performed.

Does BSS159NH6327XTSA1 require a gate resistor for stability?

A gate resistor is recommended to dampen potential ringing during fast switching, especially when driving inductive loads. While not mandatory for DC bias use, a 10–100 Ω series resistor improves dv/dt noise immunity and reduces gate oscillation risk in high-speed switching configurations.

Can BSS159NH6327XTSA1 be used in linear (ohmic) region operation?

Yes-it supports linear operation with V_DS < 10 V and I_D < 0.1 A, where R_DS(on) remains reasonably constant. However, power dissipation must stay below 0.36 W, and thermal derating applies above 25 °C ambient due to R_thJA = 350 K/W.

Is the body diode suitable for reverse recovery in switching converters?

The integrated diode has t_rr = 10.4–13 ns and Q_rr = 3.3–4.1 nC at 30 V reverse bias, making it suitable for low-frequency (<500 kHz), low-current flyback or clamp applications-but not for high-frequency synchronous rectification where faster diodes are preferred.

BSS159NH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 44 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS159NH6327XTSA1 FAQ

1.How can I place an order for BSS159NH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS159NH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS159NH6327XTSA1 reliable?

The price and inventory of BSS159NH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS159NH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSS159NH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS159NH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS159NH6327XTSA1?

BSS159NH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS159NH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS159NH6327XTSA1?

For technical support, including BSS159NH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS159NH6327XTSA1 requirements.

6.How does Aetrix verify that BSS159NH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS159NH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS159NH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSS159NH6327XTSA1?

All BSS159NH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS159NH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS159NH6327XTSA1 part is unused and in its original packaging.

Return procedure for BSS159NH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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