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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS159NL6327HTSA1

Name: BSS159NL6327HTSA1
Brand: Infineon Technologies
SKU: BSS159NL6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS159NL6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS159NL6327HTSA1.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

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Product details

Overview

BSS159NL6327HTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in SOT-23 package, rated for 60 V V_DS, 8 Ω R_DS(on) max at V_GS = 0 V, and 0.23 A continuous drain current at 25 °C ambient. It features dv/dt immunity up to 6 kV/µs and is RoHS-compliant with Pb-free lead plating - used in precision analog switching and high-reliability signal routing where controlled turn-off without gate drive is required.

For engineers reviewing the BSS159NL6327HTSA1 datasheet, BSS159NL6327HTSA1 pinout, BSS159NL6327HTSA1 application, or BSS159NL6327HTSA1 equivalent, key selection criteria include its depletion-mode operation, V_GS(th) banding (L-band: −2.9 V to −2.7 V), reverse diode recovery time (10.4–13 ns), and thermal resistance (350 K/W).

Technical Context

This device operates as a normally-on switch requiring negative gate bias to pinch off conduction - enabling fail-safe circuit behavior in power sequencing and analog multiplexing. Its depletion-mode architecture eliminates need for active gate pull-down in standby states, reducing system-level component count.

Designed for high dv/dt environments, it sustains 6 kV/µs under I_D = 0.23 A and V_DS = 60 V, with integrated body diode exhibiting 0.79–1.2 V forward voltage at I_F = 0.16 A and 10.4–13 ns reverse recovery time - critical for fast-switching linear regulators and protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche; defines upper rail limit in analog switches and level shifters.
R_DS(on) max	8 Ω at V_GS = 0 V, I_D = 0.07 A - sets on-state insertion loss and self-heating in low-current signal paths.
I_DSS min	0.13 A at V_GS = 0 V, V_DS = 10 V - minimum guaranteed conduction current in depletion mode for bias stability.
V_GS(th) (L-band)	−2.9 V to −2.7 V - tightly binned threshold enabling predictable gate drive margins in analog control loops.
t_rr	10.4–13 ns - reverse recovery time of integrated body diode; constrains maximum switching frequency in flyback or clamp topologies.
C_iss	33–44 pF - input capacitance affecting gate drive energy and high-frequency impedance matching.
P_tot	0.36 W at T_A = 25 °C - thermal limit dictating PCB copper area and derating above 25 °C ambient.

Pinout & Package

Supplied in PG-SOT-23 (JEDEC TO-236AB) plastic surface-mount package with standard 3-pin configuration and 1.3 mm pitch. Thermal resistance R_thJA = 350 K/W on minimal footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal under depletion conduction	Connected to high-side signal path; must withstand full V_DS stress and support body diode reverse recovery.
2 (Gate)	Control electrode for channel modulation	Receives negative bias (≤ −2.7 V) to fully deplete channel; high-impedance node sensitive to ESD (Class 0 HBM).
3 (Source)	Reference terminal for gate-source voltage and current return	Typically tied to ground or common reference; establishes V_GS bias point and carries full load current in series-switch configurations.

Key Features

Feature	Design Value
Depletion-mode operation	Conducts at V_GS = 0 V - enables zero-power default-on behavior for safety-critical signal routing and power-up sequencing.
V_GS(th) banding (L-band)	−2.9 V to −2.7 V - reduces gate drive design margin uncertainty and improves batch-to-batch consistency in analog bias networks.
dv/dt immunity	6 kV/µs - prevents false triggering during fast transients in motor drives and industrial I/O interfaces.
Integrated body diode	V_SD = 0.79–1.2 V at I_F = 0.16 A - supports bidirectional current flow in clamping and level-shifting applications without external diode.
Pb-free & RoHS compliant	Lead-plated terminals per DIN EN 61249-2-21 - ensures compatibility with lead-free reflow profiles and environmental compliance programs.

Applications

High-Voltage Analog Switching

Power Sequencing Control

Use Scenario: Selecting between multiple sensor inputs in a 48 V industrial data acquisition module.

IC Role / Device Role / Timing Role: Depletion-mode switch providing default-closed path until gate is pulled negative to isolate channels.

Use Value: Eliminates need for always-on gate driver; enables fail-safe signal continuity during MCU reset or brownout events.

Use Scenario: Enabling 12 V auxiliary rail only after main 48 V bus stabilizes in telecom power supply.

IC Role / Device Role / Timing Role: Normally-on pass element controlled by supervisor IC output to enforce strict power-up order.

Use Value: Prevents backfeeding and latch-up in multi-rail systems using single passive transistor instead of active PMIC sequencing logic.

Linear Regulator Pass Element

ESD-Protected Signal Routing

Use Scenario: Low-noise 5 V LDO stage supplying precision ADC reference in test equipment.

IC Role / Device Role / Timing Role: Adjustable series pass transistor with gate biased via op-amp feedback loop for tight regulation.

Use Value: Leverages low R_DS(on) drift over temperature (typ. 98% stable from −60 °C to 150 °C) for long-term reference stability.

Use Scenario: Protecting RS-485 receiver inputs against transient coupling in factory automation wiring.

IC Role / Device Role / Timing Role: High-impedance gate isolates protected line; body diode clamps ESD pulses to safe voltage levels.

Use Value: Achieves Class 0 HBM ESD rating (≤100 V) while maintaining <1 pF added capacitance to preserve signal integrity at 10 Mbps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 4.5 Ω max (lower), V_DS = 20 V (lower), no V_GS(th) banding	Suitable only for ≤20 V systems; lacks dv/dt rating and high-voltage body diode specs	Select when lower on-resistance is prioritized over voltage rating and transient immunity.
BSS138W-7-F	Enhancement-mode (not depletion), V_GS(th) = 0.8–1.5 V, R_DS(on) = 3.5 Ω max at V_GS = 10 V	Requires active gate drive; cannot provide default-on behavior or fail-safe conduction	Choose only if system architecture mandates enhancement-mode control and gate drive is available.

Compared with DMN2004LK-7 and BSS138W-7-F, BSS159NL6327HTSA1 uniquely delivers 60 V blocking, depletion-mode operation, and 6 kV/µs dv/dt immunity - making it irreplaceable in high-voltage analog switches and power sequencing where default conduction and transient robustness are mandatory.

Availability

BSS159NL6327HTSA1 is available at Aetrix Electronics and suitable for high-voltage analog switching, power sequencing control, linear regulator pass elements, and ESD-protected signal routing requiring stable component supply across industrial, telecom, and test equipment programs.

Supply support for BSS159NL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the SIPMOS® small-signal transistor product line, designed specifically for precision analog switching, fail-safe power control, and high-reliability signal routing in harsh electrical environments.

FAQ

What is the gate threshold voltage range for BSS159NL6327HTSA1?

The BSS159NL6327HTSA1 is binned in the L-band with V_GS(th) = −2.9 V to −2.7 V, measured at V_DS = 3 V and I_D = 26 µA. This tight tolerance enables consistent turn-off behavior across production lots without recalibrating gate drive circuitry.

Can this transistor be used as a high-side switch with positive gate drive?

No - as a depletion-mode device, it conducts at V_GS = 0 V and requires negative gate voltage (≤ −2.7 V) to turn off. Applying positive gate voltage increases conduction but does not improve R_DS(on); it risks exceeding ±20 V V_GS absolute maximum rating.

Does the integrated body diode support continuous reverse current?

Yes - the body diode supports 0.20 A continuous forward current (I_S) and 0.81 A pulsed current (I_S,pulse). Its V_SD = 0.79–1.2 V at I_F = 0.16 A and t_rr = 10.4–13 ns make it suitable for clamping and bidirectional signal routing, not power rectification.

Is thermal derating required above 25 °C ambient?

Yes - P_tot drops linearly from 0.36 W at 25 °C to 0 W at 150 °C junction temperature. With R_thJA = 350 K/W on minimal footprint, ambient operation above 70 °C requires PCB copper area increase or forced airflow to maintain safe T_j.

BSS159NL6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 44 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS159NL6327HTSA1 FAQ

1.How can I place an order for BSS159NL6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS159NL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS159NL6327HTSA1 reliable?

The price and inventory of BSS159NL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS159NL6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS159NL6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS159NL6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS159NL6327HTSA1?

BSS159NL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS159NL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS159NL6327HTSA1?

For technical support, including BSS159NL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS159NL6327HTSA1 requirements.

6.How does Aetrix verify that BSS159NL6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS159NL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS159NL6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS159NL6327HTSA1?

All BSS159NL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS159NL6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS159NL6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS159NL6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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