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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS159NL6906HTSA1

Name: BSS159NL6906HTSA1
Brand: Infineon Technologies
SKU: BSS159NL6906HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS159NL6906HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS159NL6906HTSA1.pdf

Description:: MOSFET N-CH 60V 230MA SOT23-3

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Product details

Overview

BSS159NL6906HTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in SOT-23 package, rated for 60 V V_DS, 8 Ω R_DS(on) (max at V_GS = 0 V), and 0.23 A continuous drain current at 25 °C ambient. It features dv/dt ruggedness (6 kV/µs), V_GS(th) band sorting (L-band: −2.9 to −2.7 V), and integrated body diode with 10.4 ns t_rr, suited for low-power analog switching and voltage-controlled current sources in sensor interface circuits.

For engineers reviewing the BSS159NL6906HTSA1 datasheet, BSS159NL6906HTSA1 pinout, BSS159NL6906HTSA1 application, or BSS159NL6906HTSA1 equivalent, key selection criteria include verified depletion-mode operation, guaranteed V_GS(th) band labeling on reel, dv/dt immunity under inductive load switching, and thermal resistance of 350 K/W in minimal footprint layout.

Technical Context

This device operates as a normally-on (depletion-mode) switch requiring negative gate bias to turn off - enabling fail-safe circuit behavior in power-gating or current-source biasing. Its R_DS(on) remains stable across temperature (typ. 8 Ω at 150 °C, I_D = 0.07 A), and its 6 kV/µs dv/dt rating ensures robustness against parasitic turn-on during fast voltage transients.

The integrated body diode supports bidirectional current flow with 0.79 V typical V_SD at I_F = 0.16 A and 10.4 ns reverse recovery time, making it suitable for synchronous rectification in low-duty-cycle DC-DC stages and analog signal clamping where low forward drop and fast recovery are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage before avalanche; defines safe operating range in 24–48 V systems
R_DS(on), max	8 Ω at V_GS = 0 V, I_D = 0.07 A - sets on-state power loss (≤ 39 mW at 0.07 A) in constant-current source designs
V_GS(th) band	L-band: −2.9 V to −2.7 V - enables precise gate-bias design for predictable turn-off threshold in analog control loops
I_DSS, min	130 mA at V_GS = 0 V - defines minimum current available in depletion-mode operation without external gate drive
t_rr	10.4 ns - limits reverse recovery charge (Q_rr = 3.3 nC) and switching losses in high-frequency clamp or sampling circuits
C_iss	33 pF typ - determines gate drive impedance requirements and input capacitance loading in high-speed switching nodes
P_tot	0.36 W at T_A = 25 °C - constrains usable power envelope in unheatsinked SOT-23 layouts

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with standard footprint per Infineon Rev. 1.32 (2006).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal (high-side connection)	Connected to load or supply rail; handles full I_D and V_DS; requires trace width matching 0.23 A continuous rating
2 (Gate)	Control electrode for depletion-mode channel	Receives negative bias (≤ −2.7 V) to reduce I_D; high-impedance input (I_GSS ≤ 10 nA); sensitive to ESD (Class 0 HBM)
3 (Source)	Reference node for V_GS and return path for I_D	Typically grounded or tied to bias reference; carries full load current and reverse diode current (I_S = 0.20 A cont.)

Key Features

Feature	Design Value
Depletion-mode operation	Provides fail-safe "always-on" behavior when gate is floating or unpowered - critical for biasing circuits and power-loss detection
V_GS(th) band sorting (L-band)	Guarantees V_GS(th) between −2.9 V and −2.7 V per reel - eliminates binning effort in production and improves batch consistency in analog current mirrors
dv/dt ruggedness	Rated 6 kV/µs under specified conditions - prevents spurious turn-on during fast voltage transients in motor-drive or relay-driver interfaces
Integrated body diode	10.4 ns t_rr, 0.79 V V_SD typ - enables use as bidirectional clamp or freewheeling path without discrete diode, reducing component count

Applications

Current Source Biasing

Sensor Interface Protection

Use Scenario: Stable 130–200 mA current source for photodiode transimpedance amplifier bias or RTD excitation.

IC Role / Device Role / Timing Role: Depletion-mode transistor acting as programmable, temperature-stable current sink with no gate drive required.

Use Value: Eliminates need for op-amp-based current sources; leverages I_DSS stability (±10% over −55 to 125 °C) and low R_DS(on) drift.

Use Scenario: Input protection clamp for precision analog front-ends exposed to ESD or transient overvoltage.

IC Role / Device Role / Timing Role: Fast-recovery body diode (t_rr = 10.4 ns) shunts transient energy while R_DS(on) limits leakage current.

Use Value: Replaces dual-diode TVS + series resistor; achieves sub-1 ns response onset and <1.2 V clamping at 0.16 A.

Fail-Safe Power Gate

Analog Signal Switching

Use Scenario: Always-on power switch for backup battery or real-time clock supply that disables only upon active negative gate control.

IC Role / Device Role / Timing Role: Normally-conducting MOSFET used as high-side enable switch with controlled turn-off via microcontroller GPIO.

Use Value: Ensures system retains power during MCU reset or firmware crash; V_GS(th) band guarantees consistent turn-off voltage margin.

Use Scenario: Low-distortion analog multiplexer element in audio or instrumentation signal paths.

IC Role / Device Role / Timing Role: Voltage-controlled resistive element (R_DS(on) = 3.9 Ω typ) modulated by gate bias to adjust gain or attenuation.

Use Value: Achieves <−80 dB THD at 1 kHz due to linear triode-region operation and low C_rss (3.9 pF typ).

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BSS138	Enhancement-mode, V_GS(th) = 0.8–1.5 V, R_DS(on) = 3.5 Ω @ V_GS = 10 V - requires positive gate drive to conduct	Not suitable for fail-safe or zero-bias operation; needs pull-up/pull-down network for defined state	Select only if gate drive is available and normally-off behavior is preferred
DMN2004K	Depletion-mode, V_DS = 20 V, R_DS(on) = 5 Ω, I_DSS = 200 mA - lower voltage rating, higher leakage (I_D(off) = 1 µA)	Limited to ≤24 V systems; less dv/dt rugged (not rated); unsuitable for 48 V industrial interfaces	Acceptable only in low-voltage consumer applications where 60 V rating is not required

Compared with BSS159NL6906HTSA1, BSS138 demands active gate control and lacks inherent fail-safe behavior, while DMN2004K trades voltage headroom and dv/dt immunity for slightly lower R_DS(on) - making the BSS159N uniquely suited for 48 V analog biasing and transient-robust clamping.

Availability

BSS159NL6906HTSA1 is available at Aetrix Electronics and suitable for current source biasing, sensor interface protection, and fail-safe power gating requiring stable component supply, consistent V_GS(th) banding, and dv/dt immunity in industrial and automotive-qualified designs.

Supply support for BSS159NL6906HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and qualification to AEC-Q101 and industrial reliability standards.

The SIPMOS® small-signal transistor product line delivers high-voltage depletion-mode MOSFETs optimized for analog biasing, voltage-controlled current sources, and robust switching in harsh electrical environments - targeting precision instrumentation and safety-critical subsystems.

FAQ

What does the 'L6906' suffix indicate in BSS159NL6906HTSA1?

The 'L6906' denotes Infineon's tape-and-reel packaging code specifying 3000 units per reel with V_GS(th) sorted into L-band (−2.9 V to −2.7 V). The 'HTSA1' suffix indicates the SOT-23 package variant with Pb-free plating and RoHS compliance, per Infineon's 2006 revision 1.32 datasheet.

Can BSS159NL6906HTSA1 be used as a replacement for enhancement-mode MOSFETs like 2N7002?

No - BSS159NL6906HTSA1 is depletion-mode (normally-on), while 2N7002 is enhancement-mode (normally-off). Substituting it without circuit redesign would cause unintended conduction. Gate drive polarity, bias networks, and fail-safe behavior must be re-evaluated; it is not a drop-in replacement.

Is the body diode rated for continuous conduction in reverse direction?

Yes - the integrated body diode supports 0.20 A continuous forward current (I_S) and 0.81 A pulsed current (I_S,pulse). Its 10.4 ns reverse recovery time and 3.3 nC Q_rr are characterized at V_R = 30 V, I_F = 0.16 A, and di_F/dt = 100 A/µs, confirming suitability for moderate-frequency freewheeling.

How does the dv/dt rating of 6 kV/µs impact PCB layout?

This rating requires minimizing parasitic inductance in drain-source paths: use short, wide traces; avoid vias in high-dv/dt nodes; place decoupling capacitors near the device; and ensure solid ground plane coupling to suppress ringing. Layout-induced overshoot exceeding 60 V must be avoided to prevent false turn-on or avalanche stress.

BSS159NL6906HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 160mA, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 44 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS159NL6906HTSA1 FAQ

1.How can I place an order for BSS159NL6906HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS159NL6906HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS159NL6906HTSA1 reliable?

The price and inventory of BSS159NL6906HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS159NL6906HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS159NL6906HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS159NL6906HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS159NL6906HTSA1?

BSS159NL6906HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS159NL6906HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS159NL6906HTSA1?

For technical support, including BSS159NL6906HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS159NL6906HTSA1 requirements.

6.How does Aetrix verify that BSS159NL6906HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS159NL6906HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS159NL6906HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS159NL6906HTSA1?

All BSS159NL6906HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS159NL6906HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS159NL6906HTSA1 part is unused and in its original packaging.

Return procedure for BSS159NL6906HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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