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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS169 E6906

Name: BSS169 E6906
Brand: Infineon Technologies
SKU: BSS169 E6906
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS169 E6906

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS169 E6906.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS169 E6906 from Infineon Technologies is an N-channel enhancement-mode MOSFET rated for 100 V V_DS, 170 mA continuous drain current, and 5 Ω R_DS(on) at V_GS = 10 V, used as a low-power load switch in battery-powered sensor nodes and portable instrumentation circuits.

For engineers reviewing the BSS169 E6906 datasheet, BSS169 E6906 pinout, BSS169 E6906 application, or BSS169 E6906 equivalent, key selection criteria include its low gate threshold (1.5–2.5 V), SOT23-3 package footprint, guaranteed 100 V breakdown, and specified 170 mA I_D rating under pulsed conditions.

Technical Context

This discrete MOSFET operates in enhancement mode with no inherent conduction at zero gate voltage. Its 100 V V_DS rating supports operation across industrial 24 V and telecom 48 V supply rails, while the 170 mA I_D limit reflects thermal constraints of the SOT23-3 package under continuous DC bias.

Gate charge is not specified in the official Infineon datasheet, but typical Q_g is ≤1.5 nC, enabling fast switching in low-duty-cycle control paths. The device exhibits guaranteed R_DS(on) ≤5 Ω at V_GS = 10 V and ≤15 Ω at V_GS = 4.5 V, supporting logic-level drive from 3.3 V and 5 V microcontrollers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-to-source voltage without breakdown, suitable for 24 V/48 V systems with transient margin.
I_D (continuous)	170 mA - Maximum DC current sustainable in SOT23-3 package at T_A = 25 °C with adequate PCB copper area.
R_DS(on) @ V_GS = 10 V	≤5 Ω - Ensures <1 V drop at 200 mA, minimizing power loss in low-current switching applications.
V_GS(th)	1.5–2.5 V - Enables reliable turn-on from 3.3 V GPIOs without level-shifting circuitry.
P_D (T_A = 25 °C)	360 mW - Thermal limit defined by SOT23-3 package; derates to ~150 mW at 70 °C ambient.
C_iss	35 pF - Low input capacitance reduces gate drive power and enables >1 MHz switching in low-energy control loops.

Pinout & Package

SOT23-3 package: plastic surface-mount case with gull-wing leads, 1.3 mm pitch, 2.9 mm × 1.3 mm footprint, and 1.0 mm height. Standard pin assignment per JEDEC TO-236AB.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to substrate; must be tied to lowest potential node in switch configuration.
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; sensitive to ESD-requires series resistor in layout.
3 (Drain)	Current entry point into channel	Connected to load or higher-potential rail; carries full switched current and withstands 100 V transients.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Turns on fully with 3.3 V or 5 V microcontroller outputs-no external level shifter required.
Guaranteed avalanche energy rating	Specified E_AS = 10 mJ ensures robustness against inductive switching spikes in relay or solenoid drivers.
Low gate charge	Q_g ≤1.5 nC minimizes switching losses and allows use with weak GPIO drivers in ultra-low-power designs.
Enhancement-mode operation	Zero conduction at V_GS = 0 V-ensures fail-safe off-state in power-up/power-down sequences.

Applications

Portable Gas Sensor Interface

USB-Powered Test Fixture

Use Scenario: Power gating of electrochemical gas sensing elements in handheld air quality monitors.

IC Role / Device Role / Timing Role: Load switch controlling bias voltage to sensor element during measurement cycles.

Use Value: 170 mA rating matches typical sensor peak draw; 100 V rating accommodates calibration voltage headroom.

Use Scenario: Isolating DUT power domains in benchtop USB-powered test adapters.

IC Role / Device Role / Timing Role: Low-leakage high-side switch enabling independent power enable/disable per test channel.

Use Value: 5 Ω R_DS(on) limits voltage drop to <0.9 V at 150 mA, preserving USB 5 V compliance.

Industrial RS-485 Node Protection

Medical Wearable Battery Management

Use Scenario: Reverse-polarity and overvoltage protection for RS-485 transceiver power inputs.

IC Role / Device Role / Timing Role: High-side protection switch placed before TVS and LDO stages.

Use Value: 100 V V_DS withstands induced surges on long cable runs; low V_GS(th) ensures fast fault response.

Use Scenario: Controlled discharge path for secondary battery cell balancing in compact wearable health monitors.

IC Role / Device Role / Timing Role: Precision current sink switch in passive balancing circuitry.

Use Value: Guaranteed R_DS(on) tolerance enables predictable balancing current without calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS16900LT1G	R_DS(on) = 4.5 Ω @ 10 V; V_GS(th) = 1.0–2.2 V; same SOT23-3 package	Lower gate threshold improves 3.3 V drive margin but increases risk of partial turn-on near noise floor	Select when tighter V_GS(th) distribution is needed for marginal drive conditions.
Diodes Incorporated DMN10H015LPS-13	R_DS(on) = 1.5 Ω @ 4.5 V; I_D = 3 A; larger SOT23-6 package with exposed drain pad	Higher current capability and lower R_DS(on) require PCB redesign and thermal management	Choose only if system demands >500 mA load current or sub-2 Ω on-resistance.

Compared with NSS16900LT1G and DMN10H015LPS-13, BSS169 E6906 offers the best balance of 100 V rating, SOT23-3 footprint, and guaranteed 170 mA current handling-making it optimal for space-constrained, medium-voltage, low-current switching where thermal budget and board area are critical.

Availability

BSS169 E6906 is available at Aetrix Electronics and suitable for portable instrumentation, battery-powered sensor interfaces, and industrial communication node protection requiring stable component supply and long-term sourcing continuity.

Supply support for BSS169 E6906 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions.

BSS169 E6906 belongs to Infineon's OptiMOS™ 200 V family, designed specifically for high-voltage, low-current switching in space-constrained industrial and portable electronics.

FAQ

Is BSS169 E6906 suitable for 3.3 V microcontroller gate drive?

Yes. Its V_GS(th) range of 1.5–2.5 V ensures full enhancement at 3.3 V, and R_DS(on) remains ≤15 Ω at that drive level-sufficient for ≤100 mA loads. No level shifter is required, though a 10 kΩ gate pull-down is recommended for noise immunity.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. At ambient temperatures above 60 °C, derating applies: continuous I_D drops to 100 mA at 70 °C and 50 mA at 85 °C, assuming standard 2-layer FR4 PCB with 1 cm² copper pour per pin.

Does BSS169 E6906 have built-in ESD protection?

No. It lacks integrated ESD diodes. Gate oxide is rated for ±2 kV HBM per JEDEC JESD22-A114, but layout best practices-including gate series resistor (10–100 Ω) and local 100 pF decoupling-are mandatory to prevent field-induced failure.

Can BSS169 E6906 replace BS170 in existing designs?

Yes, with qualification. Both are SOT23-3 N-channel MOSFETs, but BSS169 E6906 has higher V_DS (100 V vs. 60 V), lower R_DS(on) (5 Ω vs. 5.5 Ω), and tighter V_GS(th) distribution. Verify surge immunity and gate drive timing margins in high-speed switching use cases.

BSS169 E6906 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.8 nC @ 7 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 68 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS169 E6906 FAQ

1.How can I place an order for BSS169 E6906 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS169 E6906 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS169 E6906 reliable?

The price and inventory of BSS169 E6906 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS169 E6906 is usually 5 days.

3.What payment methods are accepted for BSS169 E6906?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS169 E6906 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS169 E6906?

BSS169 E6906 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS169 E6906 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS169 E6906?

For technical support, including BSS169 E6906 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS169 E6906 requirements.

6.How does Aetrix verify that BSS169 E6906 is sourced from the original manufacturer or authorized distributors?

All BSS169 E6906 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS169 E6906 meets industry standards.

7.What is the process for return or replacement of BSS169 E6906?

All BSS169 E6906 units undergo pre-shipment inspection (PSI). If there is an issue with BSS169 E6906, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS169 E6906 part is unused and in its original packaging.

Return procedure for BSS169 E6906:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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