Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS169L6327HTSA1

Name: BSS169L6327HTSA1
Brand: Infineon Technologies
SKU: BSS169L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSS169L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS169L6327HTSA1.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,679

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSS169L6327HTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in PG-SOT-23 package, rated for 100 V V_DS, 12 Ω max R_DS(on) at V_GS = 0 V, and 90 mA I_DSS; used in voltage-controlled constant-current sources and high-voltage level-shift circuits requiring dv/dt immunity.

For engineers reviewing the BSS169L6327HTSA1 datasheet, BSS169L6327HTSA1 pinout, BSS169L6327HTSA1 application, or BSS169L6327HTSA1 equivalent, key selection criteria include depletion-mode gate threshold (–2.2 V typ), 6 kV/µs dv/dt rating, V_GS(th) banding (L-band: –2.3 to –2.1 V), and integrated body diode with 25.6 ns t_rr.

Technical Context

This device operates as a normally-on switch requiring negative gate bias to turn off, enabling fail-safe operation in power sequencing and analog bias networks. Its depletion-mode behavior, combined with low gate charge (Q_g = 2.1–2.8 nC) and 51–68 pF C_iss, supports fast switching in low-power linear and switching applications up to 100 V.

The integrated body diode exhibits 0.79–1.2 V V_SD at 0.17 A and 20.5–25.6 ns reverse recovery time, making it suitable for synchronous rectification and flyback snubber paths where controlled reverse conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage before avalanche; defines safe operating range in high-side bias and level-shift topologies
R_DS(on) max	12 Ω at V_GS = 0 V - sets on-state power loss and current capability in constant-current source designs
I_DSS min	90 mA - guaranteed minimum drain current at zero gate bias; critical for setting reference currents without external bias
V_GS(th)	–2.2 V typical (L-band: –2.3 to –2.1 V) - precise negative threshold enables predictable turn-off voltage in analog control loops
dv/dt rating	6 kV/µs - ensures immunity to parasitic turn-on in high-dv/dt environments like relay drivers and motor commutation circuits
t_rr	20.5–25.6 ns - enables efficient reverse recovery in low-frequency flyback and clamp circuits with minimal switching loss
Q_g	2.1–2.8 nC - determines gate drive energy requirement and switching speed in PWM-controlled bias networks

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with standard footprint per Infineon Rev. 1.6 drawing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	High-voltage current output terminal	Connected to load or supply rail; handles full 100 V blocking and 0.17 A continuous current
2 (Gate)	Depletion-mode control input	Receives negative bias (≤ –2.1 V) to reduce I_D; zero-bias default state enables fail-safe "always-on" behavior
3 (Source)	Reference node and body diode anode	Serves as common return path; internal diode cathode connects to drain, enabling bidirectional current flow in clamp configurations

Key Features

Feature	Design Value
Depletion-mode operation	Guarantees conduction at V_GS = 0 V, eliminating need for active gate bias in standby or fault-tolerant circuits
V_GS(th) band sorting (L-band)	Enables tighter current matching across production lots for precision analog current sources and matched-pair bias networks
dv/dt immunity (6 kV/µs)	Prevents false triggering during fast transients in relay coil drivers, solenoid controls, and industrial I/O protection stages
Integrated body diode	Supports bidirectional current handling without external diode; optimized for 25.6 ns t_rr and 0.79 V V_SD at 0.17 A
Pb-free & RoHS-compliant plating	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); suitable for lead-free reflow and high-reliability industrial assembly

Applications

Constant-Current Bias Source

High-Voltage Level Shifter

Use Scenario: Generating stable 90–100 mA reference current for op-amp biasing, LED driver references, or sensor excitation in 24–48 V industrial systems.

IC Role / Device Role / Timing Role: Depletion-mode transistor acting as self-biased current sink with no external gate drive required.

Use Value: Eliminates precision resistor and voltage reference; leverages guaranteed I_DSS,min = 90 mA and tight V_GS(th) banding for ±5% current tolerance.

Use Scenario: Translating logic-level signals to 100 V domains in PLC output modules, solid-state relays, and motor phase control.

IC Role / Device Role / Timing Role: High-side level-shifting switch with inherent dv/dt immunity preventing spurious turn-on during bus transients.

Use Value: 6 kV/µs rating and 100 V V_DS enable direct interface to 48 V/72 V DC buses without additional snubbing or isolation.

Failsafe Power Sequencing

Analog Clamp Circuit

Use Scenario: Enabling automatic power-up of auxiliary rails when main supply reaches regulation, e.g., in telecom power management and FPGA configuration sequencers.

IC Role / Device Role / Timing Role: Normally-on switch that conducts until gate is actively pulled negative by supervisor IC or microcontroller.

Use Value: Inherent fail-safe behavior ensures default power delivery; L-band V_GS(th) allows predictable turn-off timing with standard logic-level drivers.

Use Scenario: Clamping inductive kickback from solenoids, relays, or stepper motor windings in automotive body electronics and industrial actuators.

IC Role / Device Role / Timing Role: Bidirectional clamp using integrated body diode and controlled R_DS(on) to limit voltage overshoot.

Use Value: 25.6 ns t_rr and 12 Ω R_DS(on) provide fast, low-loss clamping with <1.2 V forward drop and minimal ringback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	V_DS = 20 V, R_DS(on) = 3.5 Ω @ V_GS = 0 V, I_DSS = 200 mA - lower voltage, higher current, no dv/dt rating	Not suitable for >24 V level shifting or 100 V clamp circuits; limited to low-voltage bias and signal switching	Select only for sub-24 V systems requiring higher I_DSS and lower R_DS(on)
BSS138W-7-F	V_DS = 50 V, R_DS(on) = 3.5 Ω @ V_GS = 0 V, I_DSS = 100 mA - medium voltage, no dv/dt spec, different V_GS(th) distribution	Lacks 6 kV/µs immunity; unsuitable for high-dv/dt relay/solenoid drivers; requires gate pull-down redesign	Choose only when dv/dt immunity is not required and 50 V blocking suffices

Compared with DMN2004LK-7 and BSS138W-7-F, BSS169L6327HTSA1 uniquely delivers 100 V blocking, 6 kV/µs dv/dt immunity, and factory-sorted V_GS(th) bands-making it irreplaceable in industrial-level shifters and failsafe bias networks where voltage margin and transient robustness are non-negotiable.

Availability

BSS169L6327HTSA1 is available at Aetrix Electronics and suitable for constant-current bias sources, high-voltage level shifters, failsafe power sequencers, and analog clamp circuits requiring stable component supply and long-term manufacturability.

Supply support for BSS169L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS® small-signal transistor product line targets precision analog, high-reliability industrial, and fail-safe power control applications where depletion-mode behavior, dv/dt immunity, and tight parameter binning are essential.

FAQ

What is the gate threshold voltage range for BSS169L6327HTSA1?

The BSS169L6327HTSA1 is sorted into V_GS(th) bands per reel label; the L-band specifies –2.3 V to –2.1 V at V_DS = 3 V and I_D = 50 µA. This banding is confirmed in Infineon's Rev. 1.6 datasheet page 2, and each reel contains only transistors from one band.

Does BSS169L6327HTSA1 have a built-in body diode?

Yes, it integrates a monolithic body diode with 0.79–1.2 V forward voltage at 0.17 A and 20.5–25.6 ns reverse recovery time. The diode anode connects to the source pin and cathode to the drain, enabling bidirectional current flow in clamp and freewheeling applications.

Can BSS169L6327HTSA1 be used in place of an enhancement-mode MOSFET?

No-it is a depletion-mode device that conducts at V_GS = 0 V and requires negative gate bias to turn off. Substituting it for an enhancement-mode MOSFET would invert logic behavior and risk unintended conduction unless gate drive circuitry is redesigned for negative bias control.

Is the PG-SOT-23 package compatible with standard SMT reflow profiles?

Yes-the PG-SOT-23 package meets IPC-J-STD-020 MSL1 classification and is qualified for lead-free reflow with peak temperatures up to 260 °C. Thermal resistance R_thJA is 350 K/W on minimal footprint, confirming suitability for standard PCB layouts and automated assembly.

BSS169L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel, Depletion Mode

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.8 nC @ 7 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 68 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS169L6327HTSA1 FAQ

1.How can I place an order for BSS169L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS169L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS169L6327HTSA1 reliable?

The price and inventory of BSS169L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS169L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS169L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS169L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS169L6327HTSA1?

BSS169L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS169L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS169L6327HTSA1?

For technical support, including BSS169L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS169L6327HTSA1 requirements.

6.How does Aetrix verify that BSS169L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS169L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS169L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS169L6327HTSA1?

All BSS169L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS169L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS169L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS169L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.