My Inquiry
My Account
Infineon Technologies BSS192PE6327
- Part No.:
- BSS192PE6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
BSS192PE6327.pdf
- Description:
- MOSFET P-CH 250V 190MA SOT89
- Quantity:
- Payment:
- Shipping:
Inventory:7,327
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSS192PE6327 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET rated for −250 V drain-source voltage, 12 Ω RDS(on) at −10 V VGS, and −0.19 A continuous drain current in SOT-89 package. It supports logic-level gate drive (VGS(th) = −1 to −2 V), features dv/dt ruggedness up to 6 kV/µs, and is used in high-voltage DC-DC converter load switches and industrial relay drivers.
For engineers reviewing the BSS192PE6327 datasheet, BSS192PE6327 pinout, BSS192PE6327 application, or BSS192PE6327 equivalent, key selection criteria include verified −250 V VBR(DSS), temperature-stable RDS(on) up to 150 °C, SOT-89 thermal resistance (RthJA = 125 K/W), and reverse diode forward voltage of −0.78 to −1.1 V at −0.19 A.
Technical Context
This device operates as a high-voltage, low-current P-channel switching transistor with logic-compatible gate threshold (−1.5 V typ) and robust dv/dt immunity-critical for inductive load switching in unregulated power rails. Its RDS(on) remains ≤12 Ω across −55 to +150 °C junction range when driven with −10 V gate voltage.
Dynamic performance includes 4.7 ns turn-on delay, 72 ns turn-off delay, and 72–90 nC reverse recovery charge (Qrr) under −125 V reverse bias and 100 A/µs di/dt-enabling reliable operation in flyback snubber circuits and high-side switch topologies where body diode conduction occurs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | −250 V - Withstands 250 V reverse drain-source voltage before avalanche breakdown, enabling use in 200 V-class DC bus applications. |
| RDS(on) @ −10 V | 7.7–12 Ω - Confirmed on-resistance at full gate drive; defines conduction loss in load-switching paths at −0.19 A. |
| ID (cont) | −0.19 A @ TA = 25 °C - Maximum continuous current rating; derates to −0.1 A at 70 °C ambient per thermal limits. |
| VGS(th) | −1 to −2 V - Logic-level threshold ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs. |
| dv/dt rating | 6 kV/µs - Validated immunity to rapid voltage transients, preventing spurious turn-on in noisy industrial environments. |
| VSD @ −0.19 A | −0.78 to −1.1 V - Forward voltage of integrated body diode; impacts efficiency in freewheeling paths. |
| Qg | −4.9 to −6.1 nC - Total gate charge determines required driver strength and switching speed in PWM control loops. |
Pinout & Package
Supplied in SOT-89 surface-mount package (3-pin, single-ended lead frame), with thermal pad connected to Drain (Pin 2) for enhanced heat dissipation. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts logic-level voltage (−20 V max) to modulate channel conductivity. |
| Pin 2 | Drain | High-voltage output node; electrically tied to thermal pad for junction-to-solder-point thermal path (RthJS = 10 K/W). |
| Pin 3 | Source | Reference node for gate drive and current return; connects to system ground or negative rail in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting circuitry; simplifies gate drive in negative-rail systems. |
| Logic-level VGS(th) | Turns fully on with 3.3 V or 5 V MCU I/O, eliminating need for dedicated gate drivers in low-power control stages. |
| dv/dt ruggedness | 6 kV/µs rating prevents false triggering during fast voltage transients in motor drives or relay coils. |
| SIPMOS™ technology | Delivers stable RDS(on) over temperature and reduced gate charge versus conventional planar MOSFETs. |
Applications
| Industrial Relay Drivers | High-Voltage Load Switches |
|---|---|
Use Scenario: Driving 24–48 V DC relays in PLC I/O modules with inductive kick suppression. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; body diode handles flyback energy. Use Value: −250 V VBR(DSS) and 6 kV/µs dv/dt rating ensure reliable turn-off during 100–200 V inductive spikes without snubbers. | Use Scenario: Enabling/disabling auxiliary 100–200 V DC rails in telecom power supplies. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; controlled by microcontroller GPIO. Use Value: Logic-level gate allows direct MCU interface; RDS(on) ≤12 Ω limits power loss to <15 mW at 0.1 A load. |
| Flyback Snubber Circuits | Low-Power HV DC-DC Converters |
Use Scenario: Clamping voltage overshoot in discontinuous-mode flyback converters with 150–200 V input. IC Role / Device Role / Timing Role: Active clamp switch absorbing transformer leakage energy during reset phase. Use Value: Qrr = 72–90 nC and trr = 46–57 ns enable efficient energy recycling with minimal switching loss. | Use Scenario: Regulating isolated 12 V or 15 V outputs from 100–180 V DC inputs in medical sensor power modules. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch in low-duty-cycle flyback topology. Use Value: Stable RDS(on) over −55 to +150 °C ensures consistent efficiency across environmental operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12PF06 | Higher RDS(on) (1.2 Ω min), TO-220 package, −60 V rating | Not suitable for >100 V applications; limited to low-voltage industrial controls | Select only if voltage stress <60 V and PCB space permits through-hole mounting. |
| DMN2019LSD-13 | −20 V VBR(DSS), 19 mΩ RDS(on), SOT-23 package | Designed for battery-powered logic-level switching, not high-voltage isolation | Use only in sub-24 V portable electronics; incompatible with BSS192PE6327's −250 V capability. |
Compared with STP12PF06 and DMN2019LSD-13, BSS192PE6327 uniquely delivers −250 V blocking with logic-level gate drive in SOT-89-making it irreplaceable in compact, high-voltage industrial switching where voltage margin and package size are critical.
Availability
BSS192PE6327 is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage load switches, flyback snubber circuits, and low-power HV DC-DC converters requiring stable component supply across extended temperature and voltage ranges.
Supply support for BSS192PE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The SIPMOS™ small-signal transistor product line targets high-reliability, high-voltage switching in space-constrained industrial and telecom power systems-emphasizing ruggedness, logic compatibility, and thermal stability.
FAQ
Is BSS192PE6327 suitable for high-side switching in 200 V DC systems?
Yes. With −250 V VBR(DSS), 6 kV/µs dv/dt rating, and logic-level VGS(th) (−1 to −2 V), it reliably blocks and switches 200 V DC rails using standard microcontroller outputs-no level shifter needed. Thermal derating must be applied above 25 °C ambient per the ID vs. TA curve.
What is the maximum safe gate-source voltage for BSS192PE6327?
The absolute maximum VGS is ±20 V. Operation beyond this risks permanent gate oxide damage. For robust design, limit gate drive to −10 V to achieve minimum RDS(on) while maintaining margin against transient overvoltage.
Does BSS192PE6327 have an integrated body diode, and what are its characteristics?
Yes-it features a monolithic inverse parallel diode with −0.78 to −1.1 V forward voltage at −0.19 A and reverse recovery time of 46–57 ns. This enables freewheeling in inductive loads but requires attention to Qrr (72–90 nC) in high-frequency switching.
Can BSS192PE6327 replace BSS84 in existing designs?
No. Though both are P-channel SOT-89 MOSFETs, BSS84 has −50 V VBR(DSS) and 10 Ω RDS(on)-insufficient for >60 V applications. Substituting BSS192PE6327 into a BSS84 design risks overvoltage failure unless the circuit operates below 50 V and gate drive remains compatible.
BSS192PE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 12Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 104 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT89
BSS192PE6327 FAQ
1.How can I place an order for BSS192PE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS192PE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS192PE6327 reliable?
The price and inventory of BSS192PE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS192PE6327 is usually 5 days.
3.What payment methods are accepted for BSS192PE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS192PE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS192PE6327?
BSS192PE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS192PE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS192PE6327?
For technical support, including BSS192PE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS192PE6327 requirements.
6.How does Aetrix verify that BSS192PE6327 is sourced from the original manufacturer or authorized distributors?
All BSS192PE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS192PE6327 meets industry standards.
7.What is the process for return or replacement of BSS192PE6327?
All BSS192PE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS192PE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS192PE6327 part is unused and in its original packaging.
Return procedure for BSS192PE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSS192PE6327 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
