My Inquiry
My Account
Infineon Technologies BSS215PL6327HTSA1
- Part No.:
- BSS215PL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS215PL6327HTSA1.pdf
- Description:
- MOSFET P-CH 20V 1.5A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,454
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSS215PL6327HTSA1 from Infineon Technologies is a dual-channel P-channel enhancement-mode MOSFET in a small SOT-363 (SC-70-6) package, rated for -20 V drain-source voltage, -2.9 A continuous drain current at TA = 25°C, and 115 mΩ maximum RDS(on) at VGS = –4.5 V. It serves as a load switch or level-shifting power control device in space-constrained DC-DC converter output stages.
For engineers reviewing the BSS215PL6327HTSA1 datasheet, BSS215PL6327HTSA1 pinout, BSS215PL6327HTSA1 application, or BSS215PL6327HTSA1 equivalent, key selection criteria include dual P-MOSFET channel matching, low gate charge (QG = 4.2 nC), fast turn-on/turn-off times (ton = 4.5 ns, toff = 18 ns), and guaranteed RDS(on) performance down to –2.5 V gate drive.
Technical Context
This device integrates two matched P-channel MOSFETs in a single 6-pin SOT-363 package with common-source configuration and independent gate terminals. Its logic-level compatible gate threshold (VGS(th) = –0.5 V to –1.2 V) enables direct interfacing with 1.8 V and 3.3 V microcontroller I/Os without level translation.
The MOSFETs feature avalanche-rated ruggedness (EAS = 30 mJ), low input capacitance (Ciss = 220 pF), and specified reverse diode recovery (trr = 22 ns), supporting high-frequency synchronous rectification and bidirectional current control in compact power management circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V: Maximum drain-source blocking voltage under reverse bias; supports 12 V rail switching with margin. |
| ID (continuous) | –2.9 A @ TA = 25°C: Continuous current capability per channel at ambient temperature; derates to –1.9 A at 70°C. |
| RDS(on) | 115 mΩ max @ VGS = –4.5 V: On-resistance determines conduction loss in load-switching applications. |
| QG | 4.2 nC: Total gate charge; defines driver strength requirement and switching energy loss. |
| ton/toff | 4.5 ns / 18 ns: Fast switching transitions enable >1 MHz operation in DC-DC controllers. |
| VGS(th) | –0.5 V to –1.2 V: Guaranteed turn-on threshold at low gate drive; ensures reliable activation from 1.8 V logic. |
| EAS | 30 mJ: Single-pulse avalanche energy rating; provides robustness against inductive switching transients. |
Pinout & Package
Package: SOT-363 (SC-70-6), surface-mount, 1.3 mm × 2.1 mm footprint, 0.95 mm height, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source 1) | Channel 1 source terminal | Common return path for first P-MOSFET; internally connected to pin 4 in dual-channel layout. |
| 2 (Gate 1) | Channel 1 gate control | Independent gate input enabling separate control of first channel; requires negative VGS for conduction. |
| 3 (Drain 1) | Channel 1 drain terminal | High-side switching node for first channel; connects to load or power rail. |
| 4 (Source 2) | Channel 2 source terminal | Common return path for second P-MOSFET; tied to pin 1 for shared-source configuration. |
| 5 (Gate 2) | Channel 2 gate control | Independent gate input for second channel; allows asynchronous or complementary switching. |
| 6 (Drain 2) | Channel 2 drain terminal | Second high-side switching node; supports dual-load or phase-split control topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched P-channel MOSFETs | Guaranteed parameter matching (RDS(on), VGS(th)) between channels enables precise current sharing in parallel configurations. |
| Logic-level gate drive | Operates fully enhanced with –2.5 V VGS, eliminating need for external gate drivers in 3.3 V/1.8 V systems. |
| Low gate charge | QG = 4.2 nC minimizes driver power consumption and reduces switching losses in high-frequency PWM. |
| Avalanche-rated | EAS = 30 mJ ensures survivability during inductive load turn-off without external snubbers. |
| Thermally optimized package | SOT-363 offers 120 K/W junction-to-ambient thermal resistance, supporting 1.2 W dissipation at 25°C ambient. |
Applications
| USB Power Delivery Switching | Portable Device Load Management |
|---|---|
Use Scenario: Dual-path USB-C port supporting simultaneous host/device role negotiation and VBUS routing. IC Role / Device Role / Timing Role: Dual P-MOSFET performs bidirectional VBUS isolation and polarity-aware power path selection. Use Value: Matched RDS(on) ensures equal voltage drop across both paths, critical for PD contract compliance and voltage regulation accuracy. | Use Scenario: Battery-powered IoT sensor node requiring selective power gating of RF, MCU, and sensor subsystems. IC Role / Device Role / Timing Role: High-side load switch controlling power domains with independent enable signals per subsystem. Use Value: Low 115 mΩ RDS(on) limits dropout to <120 mV at 1 A, preserving battery runtime and brownout margins. |
| Industrial PLC I/O Module | Automotive Body Control Unit |
Use Scenario: 24 V digital output stage driving solenoids and indicator LEDs with short-circuit protection. IC Role / Device Role / Timing Role: High-side switch implementing current-limited, fast-turn-off outputs with integrated fault reporting. Use Value: 30 mJ avalanche rating withstands inductive kickback from 24 V solenoid coils without external clamping diodes. | Use Scenario: 12 V accessory power distribution in door modules managing mirror, lock, and window actuators. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent control and diagnostics of two actuator circuits. Use Value: Independent gate terminals allow staggered turn-on to limit inrush current during cold-cranking conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2013LFG-7 | RDS(on) = 130 mΩ @ –4.5 V; higher QG = 5.8 nC; SOT-563 package (smaller footprint but lower thermal mass) | Lower power density handling; less suitable for sustained >1.5 A loads without forced airflow | Preferred where board area is constrained and peak current ≤1.5 A |
| SI2301DS-T1-GE3 | Single P-MOSFET; RDS(on) = 110 mΩ @ –4.5 V; no channel matching; SOT-23 package | Requires two devices for dual functionality; no guaranteed inter-device parametric match | Selected when cost sensitivity outweighs matching requirements and layout allows duplication |
Compared with DMN2013LFG-7 and SI2301DS-T1-GE3, BSS215PL6327HTSA1 delivers superior channel matching, lower gate charge, and better thermal performance in a proven industrial-grade SOT-363 package-making it optimal for precision dual-load switching where timing alignment and conduction symmetry matter.
Availability
BSS215PL6327HTSA1 is available at Aetrix Electronics and suitable for USB Power Delivery implementations, portable device power sequencing, and industrial I/O module designs requiring stable component supply and long-term production continuity.
Supply support for BSS215PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.
BSS215PL6327HTSA1 belongs to Infineon's OptiMOS™ 2P family, engineered for high-efficiency, space-constrained DC-DC and load-switching applications in consumer, industrial, and automotive electronics.
FAQ
What is the maximum operating temperature for continuous operation?
The BSS215PL6327HTSA1 has a specified operating junction temperature range of –55°C to +150°C. For continuous DC operation at full rated current (–2.9 A), the maximum ambient temperature is 70°C with standard PCB copper pour (1 cm² 2 oz Cu on both sides). Derating curves in the official Infineon datasheet define safe operating area boundaries based on thermal resistance and power dissipation.
Does this part support gate resistors for EMI reduction?
Yes-external gate resistors (typically 10–100 Ω) can be placed in series with pins 2 and 5 to dampen ringing and reduce EMI during switching. The low QG (4.2 nC) and moderate Ciss (220 pF) make it responsive to such tuning without significant speed penalty. Layout best practices recommend placing resistors close to the gate pins and minimizing trace inductance.
Is the body diode suitable for reverse-current conduction?
The integrated body diode has a typical forward voltage of 0.85 V at –1 A and reverse recovery time (trr) of 22 ns, making it suitable for synchronous rectification in buck converters up to ~500 kHz. However, its softness factor and lack of specified reverse recovery charge (Qrr) limit use in hard-switched ZVS topologies without additional characterization.
Can pins 1 and 4 be used independently as separate source nodes?
No-pins 1 and 4 are internally bonded together as a common source node in the SOT-363 die construction. Attempting to bias them at different potentials will cause internal current flow and potential device failure. The dual-channel architecture assumes shared-source operation; independent source control requires discrete single-channel MOSFETs.
BSS215PL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.6 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 346 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS215PL6327HTSA1 FAQ
1.How can I place an order for BSS215PL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS215PL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS215PL6327HTSA1 reliable?
The price and inventory of BSS215PL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS215PL6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BSS215PL6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS215PL6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS215PL6327HTSA1?
BSS215PL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS215PL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS215PL6327HTSA1?
For technical support, including BSS215PL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS215PL6327HTSA1 requirements.
6.How does Aetrix verify that BSS215PL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS215PL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS215PL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS215PL6327HTSA1?
All BSS215PL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS215PL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS215PL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS215PL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSS215PL6327HTSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
