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Infineon Technologies BSS225H6327XTSA1

Part No.:
BSS225H6327XTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-243AA
Datasheet:
AetrixBSS225H6327XTSA1.pdf
Description:
MOSFET N-CH 600V 90MA SOT89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,372

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Product details

Overview

BSS225H6327XTSA1 from Infineon Technologies is an AEC-Q101-qualified n-channel enhancement-mode SIPMOS® small-signal MOSFET in SOT-89 package, rated for 600 V VDS, 45 Ω RDS(on) max at 4.5 V VGS, and 90 mA continuous drain current - used in automotive LED drivers and high-voltage logic-level switching circuits.

For engineers reviewing the BSS225H6327XTSA1 datasheet, BSS225H6327XTSA1 pinout, BSS225H6327XTSA1 application, or BSS225H6327XTSA1 equivalent, key selection criteria include its dv/dt rating (6 kV/µs), reverse diode recovery performance (trr = 246–370 ns), and thermal resistance (RthJA = 125 K/W) under minimal footprint conditions.

Technical Context

This device operates as a logic-level-controlled high-voltage switch with gate threshold voltage tightly specified (1.3–2.3 V) and optimized for low-voltage drive compatibility. Its dv/dt immunity enables robust operation in inductive load switching without spurious turn-on.

The integrated body diode exhibits controlled reverse recovery (Qrr = 248–373 nC, trr = 246–370 ns) and forward voltage of 0.75–1.2 V at 90 mA, supporting freewheeling in flyback and buck-derived topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating600 V - supports primary-side switching in offline AC/DC converters up to 380 V DC bus.
RDS(on) max45 Ω @ VGS = 4.5 V - ensures full enhancement with standard logic-level microcontroller outputs.
ID Continuous90 mA @ TA = 25 °C - suitable for low-power auxiliary supplies and LED bias control.
dv/dt Rating6 kV/µs - prevents false triggering during fast voltage transients in automotive and industrial environments.
trr246–370 ns - enables efficient operation in quasi-resonant and discontinuous conduction mode (DCM) flyback designs.
RthJA125 K/W - defines maximum power dissipation limit (1.0 W) under standard PCB footprint without heatsink.
ESD ClassJESD22-A114-HBM Class 1a - indicates basic handling robustness but not system-level ESD immunity.

Pinout & Package

SOT-89 package with 3-pin configuration: compact surface-mount outline optimized for thermal performance on minimal copper area. Creepage-sensitive layout requires conformal coating per manufacturer note.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal of n-channel MOSFETReference node for gate drive; connected to ground or low-side return path in switching applications.
Pin 2 (Gate)Control electrodeLogic-level compatible input requiring ≤2.3 V threshold; gate charge Qg = 3.9–5.8 nC determines drive strength requirement.
Pin 3 (Drain)High-voltage output terminalCarries switched 600 V loads; internal avalanche-rated structure supports unclamped inductive energy absorption.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive temperature range (−55 to +150 °C) and reliability stress tests including HTGB, HTRB, and TC.
Logic-level gate driveVGS(th) = 1.3–2.3 V enables direct interface with 3.3 V or 5 V MCU GPIO without level-shifting circuitry.
dv/dt immunityRated 6 kV/µs - suppresses parasitic turn-on in high-dV/dt environments such as motor phase-legs or relay drivers.
Integrated body diodeSpecified trr and Qrr allow predictable freewheeling behavior in DCM flyback and boost converters.
Pb-free & halogen-freeComplies with RoHS Directive 2011/65/EU and IEC 61249-2-21 Rev 1.29 - supports green manufacturing requirements.

Applications

Automotive LED Headlamp DriverIndustrial Flyback Auxiliary Supply

Use Scenario: Switching control of high-brightness LED strings in 12 V/24 V vehicle systems with PWM dimming.

IC Role / Device Role / Timing Role: Low-side logic-level switch enabling precise current regulation via external sense resistor and MCU timing.

Use Value: 600 V rating accommodates load dump transients; dv/dt immunity prevents false turn-on during alternator ripple events.

Use Scenario: Primary-side active clamp or snubber switch in isolated 5–12 V auxiliary supplies for PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage transient suppression switch operating in discontinuous conduction mode with controlled diode recovery.

Use Value: Verified trr and Qrr values enable accurate loss estimation and thermal design for 100 kHz–500 kHz operation.

Smart Home Power Meter Relay DriverWhite Goods Motor Control Snubber

Use Scenario: Solid-state replacement for electromechanical relays in residential energy monitoring units.

IC Role / Device Role / Timing Role: High-voltage isolation switch interfacing MCU GPIO to 230 V AC line-connected loads.

Use Value: 90 mA ID rating supports pilot lamp and status indicator circuits; AEC-Q101 qualification adds long-term reliability margin.

Use Scenario: RC snubber switch in BLDC motor gate driver stages for washing machine and HVAC compressors.

IC Role / Device Role / Timing Role: Fast-switching clamping element absorbing inductive kickback from half-bridge FETs.

Use Value: 6 kV/µs dv/dt rating ensures stable operation during rapid bus voltage transitions in motor commutation cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP1NK60Z600 V VDS, 110 Ω RDS(on) max @ 10 V, higher gate charge (Qg = 8.5 nC)Requires stronger gate driver; less suitable for 3.3 V logic interfacesPrefer when higher avalanche energy rating is required and gate drive capability permits.
DMN6070LFG-760 V VDS, 70 mΩ RDS(on) @ 4.5 V, not AEC-Q101 qualifiedNot usable in >100 V applications; lacks automotive reliability validationSelect only for non-automotive, low-voltage (<60 V) logic-level switching where cost is prioritized over HV robustness.

Compared with STP1NK60Z and DMN6070LFG-7, BSS225H6327XTSA1 uniquely balances 600 V capability, logic-level drive, AEC-Q101 compliance, and minimal footprint - making it optimal for space-constrained automotive auxiliary switches where reliability and dv/dt immunity are critical.

Availability

BSS225H6327XTSA1 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial flyback auxiliary supplies, and smart home power meter relay drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSS225H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices and wide-bandgap solutions.

The SIPMOS® small-signal transistor product line delivers high-voltage, logic-compatible MOSFETs optimized for automotive lighting, industrial sensing, and low-power switching - emphasizing reliability, dv/dt immunity, and AEC-Q101 compliance.

FAQ

Is BSS225H6327XTSA1 suitable for 230 V AC mains switching?

Yes - with its 600 V VDS rating and 6 kV/µs dv/dt immunity, it supports switching across 230 V AC (325 V peak) with margin for transients. Derating per ID-TA curves is required above 70 °C ambient, and conformal coating is recommended per Infineon's creepage guidance.

What is the maximum gate-source voltage this MOSFET can withstand?

The absolute maximum VGS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable logic-level drive, keep VGS between 4.5 V and 10 V - where RDS(on) is fully specified (30–45 Ω) and gate charge remains low (Qg = 3.9–5.8 nC).

Does the integrated body diode support continuous conduction mode (CCM) operation?

No - the diode is characterized for reverse recovery in DCM only (trr = 246–370 ns, Qrr = 248–373 nC). CCM operation risks excessive diode heating due to lack of soft-recovery specification and limited IS rating (90 mA continuous).

Can this part replace BSS123 in existing designs?

No - BSS123 is a 100 V, 170 mA device with lower RDS(on) (3.5 Ω) and no dv/dt or AEC-Q101 rating. BSS225H6327XTSA1 offers higher voltage capability and automotive qualification but trades off on current and on-resistance - redesign of gate drive and thermal layout is required.

BSS225H6327XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS™
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id:
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:
5.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
131 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT89

BSS225H6327XTSA1 FAQ

1.How can I place an order for BSS225H6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS225H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS225H6327XTSA1 reliable?

The price and inventory of BSS225H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS225H6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSS225H6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS225H6327XTSA1 transactions.

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4.How is shipping managed for BSS225H6327XTSA1?

BSS225H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS225H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS225H6327XTSA1?

For technical support, including BSS225H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS225H6327XTSA1 requirements.

6.How does Aetrix verify that BSS225H6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS225H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS225H6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSS225H6327XTSA1?

All BSS225H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS225H6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS225H6327XTSA1 part is unused and in its original packaging.

Return procedure for BSS225H6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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