Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BSS225L6327HTSA1

Part No.:
BSS225L6327HTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-243AA
Datasheet:
AetrixBSS225L6327HTSA1.pdf
Description:
MOSFET N-CH 600V 90MA SOT89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,904

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSS225L6327HTSA1 from Infineon Technologies is an n-channel enhancement-mode SIPMOS® small-signal transistor in SOT-89 package, rated for 600 V drain-source breakdown voltage, 45 Ω max RDS(on) at VGS = 4.5 V and ID = 90 mA, and dv/dt ruggedness up to 6 kV/µs. It serves as a logic-level high-voltage switch in offline auxiliary power supplies and LED driver control stages.

For engineers reviewing the BSS225L6327HTSA1 datasheet, BSS225L6327HTSA1 pinout, BSS225L6327HTSA1 application, or BSS225L6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, 600 V blocking capability, low gate charge (Qg = 3.9–5.8 nC), and thermal resistance of 125 K/W in minimal-footprint SOT-89 mounting.

Technical Context

This device operates in enhancement mode with a gate threshold voltage of 1.3–2.3 V, enabling direct drive from 3.3 V or 5 V logic without level-shifting. Its dv/dt rating of 6 kV/µs ensures robustness against parasitic turn-on in high-noise flyback or buck-derived topologies.

The integrated body diode exhibits trr = 246–370 ns and Qrr = 248–373 nC under VR = 300 V, IF = 90 mA conditions, supporting moderate-frequency discontinuous conduction mode (DCM) operation while limiting switching loss during diode commutation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating600 V - supports primary-side switching in universal-input (85–265 VAC) offline SMPS up to ~400 V DC bus.
RDS(on) max45 Ω @ VGS = 4.5 V, ID = 90 mA - defines on-state power loss (≤0.36 W) in low-current auxiliary rails.
Qg3.9–5.8 nC - enables efficient 100–500 kHz switching with standard gate drivers (e.g., UCC27517).
tr/tf38–57 ns / 41–62 ns - supports fast edge control in low-duty-cycle pulse applications like LED dimming.
Tj Range−55 °C to +150 °C - qualified per AEC-Q101 for automotive cabin electronics and industrial control modules.
Ciss99–131 pF - determines Miller capacitance impact on gate drive stability in high-dv/dt environments.

Pinout & Package

SOT-89 package: surface-mount, 3-pin, single-ended leadframe with exposed drain pad for thermal relief. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control electrodeAccepts logic-level input (≥3.3 V) to fully enhance channel; requires <200 nA leakage current handling.
Pin 2 (Drain)High-voltage output nodeConnected to 600 V rail; tab serves as thermal path and primary current return-must be soldered to copper pour.
Pin 3 (Source)Reference nodeProvides common return for gate drive and load; ties to ground or floating bias network in high-side configurations.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.3–2.3 V enables direct interface with microcontrollers and PWM ICs without external level shifters.
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM Class 1a).
dv/dt ruggedness6 kV/µs rating prevents false triggering during fast voltage transients in transformer-coupled circuits.
Integrated body diodeLow VSD = 0.75–1.2 V and controlled Qrr allow use in self-oscillating or quasi-resonant flyback snubberless designs.

Applications

Offline Auxiliary Power SupplyLED Driver Control Switch

Use Scenario: Provides isolated 12 V/5 V standby power in AC-DC adapters using flyback topology with <100 mA output.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 60–120 kHz with DCM control.

Use Value: 600 V rating accommodates reflected voltage spikes up to 480 V; low Qg reduces gate drive loss in low-power duty cycles.

Use Scenario: Controls current flow to high-brightness LED strings in streetlight or architectural lighting drivers.

IC Role / Device Role / Timing Role: Low-duty-cycle PWM switch in constant-current regulation stage with 1–10 kHz modulation.

Use Value: Logic-level gate allows direct MCU GPIO drive; dv/dt immunity prevents misfiring during EMI-rich lamp ignition events.

Automotive Cabin Fan ControllerIndustrial Sensor Bias Supply

Use Scenario: Drives brushed DC fan motors in HVAC modules where space-constrained PCB layout demands SOT-89 footprint.

IC Role / Device Role / Timing Role: Low-current (<90 mA) high-side switch with PWM speed control and overtemperature shutdown feedback.

Use Value: AEC-Q101 qualification ensures operation across −40 °C to +125 °C ambient; RDS(on) stability over temperature minimizes calibration drift.

Use Scenario: Generates stable 5 V bias for analog sensor front-ends in programmable logic controllers (PLCs) with 24 V DC input.

IC Role / Device Role / Timing Role: Linear-regulator pass element in low-noise, low-quiescent-current LDO configuration.

Use Value: Low ID(off) ≤ 0.1 µA at 25 °C and ≤5 µA at 150 °C maintains precision reference stability over full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP1NK60Z600 V, 1 A ID, RDS(on) = 70 Ω @ 10 V - higher on-resistance, larger TO-92 package.Not suitable for SOT-89 board space; requires higher gate voltage for full enhancement.Select only if higher continuous current rating is required and board area permits TO-92 mounting.
DMN601WK-760 V max VDS, 300 mA ID, RDS(on) = 2.5 Ω @ 4.5 V - lower voltage rating, smaller SOT-23 footprint.Cannot replace in 400 V+ systems; limited to low-voltage DC-DC bias rails.Use only in sub-60 V applications where ultra-low RDS(on) and minimal footprint outweigh voltage constraints.

Compared with STP1NK60Z and DMN601WK-7, BSS225L6327HTSA1 uniquely balances 600 V capability, logic-level drive, and SOT-89 thermal performance-making it optimal for compact, high-reliability auxiliary switching where voltage margin and gate simplicity are critical.

Availability

BSS225L6327HTSA1 is available at Aetrix Electronics and suitable for offline auxiliary power supplies, LED driver control switches, and automotive cabin fan controllers requiring stable component supply and AEC-Q101 compliance.

Supply support for BSS225L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The SIPMOS® small-signal transistor product line delivers high-voltage, logic-compatible MOSFETs optimized for space-constrained auxiliary power, lighting, and automotive subsystems where reliability and dv/dt immunity are essential.

FAQ

Is BSS225L6327HTSA1 suitable for high-frequency switching above 500 kHz?

No. Its typical Ciss (99–131 pF) and Qg (3.9–5.8 nC) result in gate drive energy requirements that increase significantly above 500 kHz. Measured tr/tf (38–62 ns) and RDS(on) temperature coefficient also limit efficiency gains beyond this range. Use is recommended up to 300 kHz for thermally constrained SOT-89 layouts.

Can BSS225L6327HTSA1 be used in high-side configuration?

Yes. With proper gate drive referenced to the source (e.g., bootstrap or isolated driver), it functions reliably as a high-side switch. The VGS rating of ±20 V and logic-level threshold enable compatibility with common high-side gate drivers such as IRS2117, provided VGS remains within limits during transient conditions.

What is the maximum safe operating area (SOA) limitation at TA = 70 °C?

At TA = 70 °C, the continuous drain current is derated to 73 mA. The SOA curve (page 4 of datasheet Rev. 1.25) shows single-pulse operation is limited to 0.09 A at VDS = 400 V for tp ≤ 100 µs. Exceeding these boundaries risks thermal runaway due to the SOT-89's 125 K/W RthJA.

Does the body diode support synchronous rectification?

No. The body diode has trr = 246–370 ns and Qrr = 248–373 nC-too slow and lossy for synchronous rectification in >100 kHz topologies. It is intended for freewheeling or snubbing, not active rectification. External Schottky diodes or dedicated SR controllers are required for efficiency-critical outputs.

BSS225L6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id:
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:
5.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
131 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT89

BSS225L6327HTSA1 FAQ

1.How can I place an order for BSS225L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS225L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS225L6327HTSA1 reliable?

The price and inventory of BSS225L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS225L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS225L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS225L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS225L6327HTSA1?

BSS225L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS225L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS225L6327HTSA1?

For technical support, including BSS225L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS225L6327HTSA1 requirements.

6.How does Aetrix verify that BSS225L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS225L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS225L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS225L6327HTSA1?

All BSS225L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS225L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS225L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS225L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS225L6327HTSA1 Tags

  • BSS225L6327HTSA1
  • BSS225L6327HTSA1 PDF
  • BSS225L6327HTSA1 Datasheet
  • BSS225L6327HTSA1 Specifications
  • BSS225L6327HTSA1 Images
  • Infineon Technologies
  • Infineon Technologies BSS225L6327HTSA1
  • Buy BSS225L6327HTSA1
  • BSS225L6327HTSA1 Price
  • BSS225L6327HTSA1 Distributor
  • BSS225L6327HTSA1 Supplier
  • BSS225L6327HTSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER