Infineon Technologies BSS306NL6327HTSA1
- Part No.:
- BSS306NL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS306NL6327HTSA1.pdf
- Description:
- MOSFET N-CH 30V 2.3A SOT23-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BSS306NL6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in SOT-23 package, rated for 60 V drain-source voltage, 340 mA continuous drain current at TA = 25°C, and 1.4 Ω typical RDS(on) at VGS = 10 V. It serves as a low-side load switch in portable power management circuits.
For engineers reviewing the BSS306NL6327HTSA1 datasheet, BSS306NL6327HTSA1 pinout, BSS306NL6327HTSA1 application, or BSS306NL6327HTSA1 equivalent, key selection criteria include RDS(on) at 4.5 V, gate charge (QG = 1.8 nC), switching speed (ton = 3.5 ns), and thermal resistance (RthJA = 350 K/W).
Technical Context
This MOSFET uses planar silicon technology with optimized channel geometry to achieve low on-resistance while maintaining fast switching performance. Its gate threshold voltage (VGS(th) = 1.0–2.5 V) enables direct drive from 3.3 V logic interfaces without level shifting.
The device features integrated ESD protection (HBM > 2 kV), specified avalanche energy rating (EAS = 10 mJ), and guaranteed operation across -55°C to +150°C junction temperature range - supporting robustness in battery-powered and automotive body electronics applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 24 V industrial bus and 48 V PoE systems with margin |
| ID (continuous) | 340 mA @ TA = 25°C - suitable for LED backlighting and sensor bias switching |
| RDS(on) max | 2.0 Ω @ VGS = 4.5 V - ensures <150 mW conduction loss at 300 mA load |
| QG | 1.8 nC - enables sub-10 ns turn-on with 10 mA gate driver |
| ton/toff | 3.5 ns / 10 ns - minimizes switching losses in high-frequency DC-DC control |
| RthJA | 350 K/W - requires minimal PCB copper area for thermal relief in space-constrained layouts |
| VGS(th) | 1.0–2.5 V - compatible with 1.8 V/3.3 V microcontroller GPIO without external level shifter |
Pinout & Package
Package: SOT-23 (TO-236AB), surface-mount, 3-pin plastic case with standard JEDEC outline and thermal pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives logic-level signal; capacitance Ciss = 90 pF affects driver sizing |
| 2 (Source) | Power return path | Connected to ground or low-side reference; forms common node for current sensing |
| 3 (Drain) | Load connection | Switches positive supply to load; routed away from sensitive analog traces to limit coupling |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver IC in 3.3 V systems |
| Low gate charge | QG = 1.8 nC - reduces dynamic power loss and simplifies gate resistor selection |
| Specified avalanche capability | EAS = 10 mJ - withstands inductive kickback in relay and solenoid driving without snubber |
| ESD-protected gate | HBM rating > 2 kV - improves handling yield during manual assembly and rework |
| Extended temperature range | −55°C to +150°C - qualified for under-hood automotive modules and industrial motor controls |
Applications
| LED Backlight Control | USB Port Power Switch |
|---|---|
Use Scenario: Driving white LED strings in handheld displays with PWM dimming at 1–5 kHz. IC Role / Device Role / Timing Role: Low-side constant-current switch synchronized to MCU PWM output. Use Value: RDS(on) ≤ 2.0 Ω limits voltage drop to <600 mV at 300 mA, preserving headroom for LED forward voltage. | Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices in laptop docking stations. IC Role / Device Role / Timing Role: Hot-swap FET controlled by system PMIC enable signal. Use Value: ton = 3.5 ns and QG = 1.8 nC allow clean 10 µs turn-on edge, minimizing inrush-induced rail droop. |
| IoT Sensor Bias Switch | Automotive Door Module Load |
Use Scenario: Power gating MEMS accelerometers and humidity sensors between measurement cycles. IC Role / Device Role / Timing Role: Standby current limiter activated by microcontroller GPIO. Use Value: IDSS ≤ 1 µA at 60 V ensures <100 nA leakage per sensor, extending battery life in 10-year deployments. | Use Scenario: Controlling interior lighting and mirror heater loads in vehicle door ECUs. IC Role / Device Role / Timing Role: Protected low-side driver with integrated avalanche energy rating. Use Value: EAS = 10 mJ handles inductive energy from 12 V lamp filaments without external clamping diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | RDS(on) = 1.8 Ω @ 4.5 V; QG = 2.1 nC; SOT-23 package | Slightly lower RDS(on) but higher gate charge increases switching loss at >1 MHz | Prefer for static load efficiency over dynamic performance |
| FDN306P | P-channel, −20 V, RDS(on) = 2.5 Ω @ −4.5 V; same footprint | Requires inverted control logic and higher gate drive voltage swing | Only if high-side switching topology is mandatory |
Compared with DMN3026LSD-13 and FDN306P, BSS306NL6327HTSA1 offers optimal balance of low gate charge and logic-level compatibility for 3.3 V MCU-driven low-side switches, especially where fast turn-on and minimal PCB area are critical.
Availability
BSS306NL6327HTSA1 is available at Aetrix Electronics and suitable for LED backlight control, USB port power switching, and IoT sensor bias switching requiring stable component supply and full traceability.
Supply support for BSS306NL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
BSS306NL6327HTSA1 belongs to Infineon's OptiMOS™ 200 V–30 V low-voltage power MOSFET family, designed specifically for high-efficiency, space-constrained DC-DC conversion and load switching in portable and automotive applications.
FAQ
What is the maximum safe operating voltage for BSS306NL6327HTSA1?
The absolute maximum drain-source voltage is 60 V DC. Operation above 54 V is not recommended in designs requiring long-term reliability, as derating by 10% provides margin against transients and temperature-induced drift. The device is not rated for repetitive avalanche beyond its specified EAS = 10 mJ single-pulse limit.
Can BSS306NL6327HTSA1 be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage range (1.0–2.5 V) and guaranteed RDS(on) ≤ 2.0 Ω at VGS = 4.5 V ensure full enhancement with 3.3 V logic. However, for worst-case margin at high temperature, verify that the MCU's high-level output remains ≥2.8 V under load using a series 10 Ω gate resistor to damp ringing.
Is there a recommended PCB layout for thermal performance?
Yes - use minimum 10 mm² copper pour connected to the source pad (Pin 2) on the top layer, with ≥4 thermal vias (0.3 mm diameter) to inner ground plane. Avoid placing sensitive analog traces within 2 mm of the drain pad (Pin 3). The SOT-23 footprint must match Infineon's recommended land pattern (0.9 × 1.3 mm pad, 0.5 mm pitch).
Does BSS306NL6327HTSA1 meet AEC-Q101 qualification?
No - BSS306NL6327HTSA1 is qualified to industrial grade (−55°C to +150°C) per JESD22-A108, but it is not AEC-Q101 certified. For automotive applications requiring AEC-Q101, consider Infineon's BUK9Y6R5-40E (AEC-Q101 qualified, same RDS(on) class, TO-263 package).
BSS306NL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 275 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS306NL6327HTSA1 FAQ
1.How can I place an order for BSS306NL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS306NL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS306NL6327HTSA1 reliable?
The price and inventory of BSS306NL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS306NL6327HTSA1 is usually 5 days.
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Once your BSS306NL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS306NL6327HTSA1?
For technical support, including BSS306NL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS306NL6327HTSA1 requirements.
6.How does Aetrix verify that BSS306NL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS306NL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS306NL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS306NL6327HTSA1?
All BSS306NL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS306NL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS306NL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS306NL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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