Infineon Technologies BSS308PEL6327HTSA1
- Part No.:
- BSS308PEL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS308PEL6327HTSA1.pdf
- Description:
- MOSFET P-CH 30V 2A SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,573
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Product details
Overview
BSS308PEL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in low-voltage DC applications. It features RDS(on) = 39 mΩ at VGS = −4.5 V, continuous drain current ID = −4.5 A, and operates up to Tj = 150 °C - used in USB power switches, e-fuse circuits, and portable device battery protection.
For engineers reviewing the BSS308PEL6327HTSA1 datasheet, BSS308PEL6327HTSA1 pinout, BSS308PEL6327HTSA1 application, or BSS308PEL6327HTSA1 equivalent, key selection criteria include guaranteed RDS(on) at −4.5 V gate drive, low gate charge (Qg = 9.5 nC), fast turn-on/turn-off times (<10 ns), and lead-free, RoHS-compliant SOT-223 package compatibility with automated assembly.
Technical Context
This MOSFET employs a trench-based silicon process optimized for low on-resistance and fast switching in unidirectional high-side or low-side configurations. Its gate threshold voltage VGS(th) = −1.0 V to −2.5 V ensures reliable turn-on with standard logic-level control signals, while its 100% avalanche-rated construction supports robust transient handling in inductive load environments.
The device integrates a monolithic body diode with reverse recovery time trr = 45 ns and Qrr = 23 nC, enabling efficient freewheeling in synchronous rectifier and H-bridge topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −60 V - maximum drain-to-source blocking voltage under DC or pulsed conditions |
| RDS(on) | 39 mΩ @ VGS = −4.5 V - enables <180 mW conduction loss at 2 A load current |
| ID (cont) | −4.5 A @ Tc = 25 °C - continuous safe operating current with heatsink |
| Qg | 9.5 nC - total gate charge determining driver strength requirement for <20 ns switching |
| ton/toff | 7.5 ns / 5.5 ns - enables >50 MHz PWM operation in digital power control loops |
| VGS(th) | −1.0 V to −2.5 V - ensures full enhancement with 3.3 V logic-level gate drive |
| PD | 2.5 W @ Tc = 25 °C - thermal limit defining minimum copper area needed on PCB for thermal management |
Pinout & Package
SOT-223 package with exposed drain pad for enhanced thermal dissipation; 4-pin configuration (Drain connected to tab, Source, Gate, Drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path output | Internally bonded to metal tab - must be connected to ground plane or heatsink for thermal performance |
| Pin 2 (Source) | Reference node for gate control | Common return path for load current; defines VGS reference point |
| Pin 3 (Gate) | Control input | High-impedance terminal requiring <10 kΩ series resistor to suppress ringing during fast edge transitions |
| Pin 4 (Drain) | Secondary drain connection | Redundant drain bond - electrically identical to Pin 1 and tab; improves current sharing and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = −3.0 V, compatible with 3.3 V microcontroller GPIOs without level-shifting |
| Low gate charge | Qg = 9.5 nC reduces driver IC power consumption and EMI in high-frequency switching |
| Avalanche rated | Specified single-pulse avalanche energy EAS = 110 mJ - supports inductive load interruption without snubber networks |
| Enhanced body diode | trr = 45 ns and soft recovery reduce voltage overshoot and EMI in flyback and buck-boost converters |
| RoHS & halogen-free | Meets IPC-J-STD-609A Class 1 halogen content limits - suitable for consumer and medical end equipment |
Applications
| USB Power Delivery Switch | e-Fuse Protection Circuit |
|---|---|
Use Scenario: Selective power routing in USB-C PD controllers where overcurrent detection triggers automatic shutdown. IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V bus delivery with sub-100 ns fault response latency. Use Value: RDS(on) = 39 mΩ limits voltage drop to <195 mV at 5 A, preserving PD negotiation margins and minimizing thermal rise. | Use Scenario: Replace mechanical fuses in industrial IoT sensor nodes requiring resettable overcurrent protection. IC Role / Device Role / Timing Role: Current-sense-controlled MOSFET acting as programmable current limiter with fast trip (<1 µs) and auto-retry. Use Value: Low Qg and fast ton/toff enable precise current limiting window control using external comparator feedback. |
| Portable Battery Protection | DC Motor Control Interface |
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for handheld test equipment. IC Role / Device Role / Timing Role: Bidirectional blocking switch placed between battery terminals and system load, controlled by protection ASIC. Use Value: VDS = −60 V withstands 2-cell stack transients; integrated body diode eliminates need for external anti-parallel diode. | Use Scenario: Low-side drive for brushed DC motors in battery-powered robotics platforms. IC Role / Device Role / Timing Role: PWM-controlled power stage with duty-cycle-modulated torque and direction via H-bridge half-bridge pairing. Use Value: trr = 45 ns and Qrr = 23 nC minimize shoot-through risk and switching losses at 20 kHz PWM frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 48 mΩ @ −4.5 V; higher Qg = 12.5 nC; SOT-23 package | Lower current rating (−4.2 A); unsuitable for >3 A continuous loads due to thermal limitations | Select when board space is constrained and peak current ≤3 A; verify PCB copper area for thermal derating |
| IPD250N06L3ATMA1 | RDS(on) = 2.5 mΩ @ −4.5 V; TO-252 package; 60 V rating same | Higher cost and larger footprint; overqualified for ≤5 A applications but supports higher efficiency at >2 A | Choose only if system requires <50 mW conduction loss at 4 A or needs extended lifetime under thermal cycling |
Compared with DMG2305UVT-7 and IPD250N06L3ATMA1, BSS308PEL6327HTSA1 delivers optimal balance of low RDS(on), compact SOT-223 thermal performance, and gate drive compatibility - making it ideal for cost-sensitive, space-constrained 3–5 A load switches where moderate efficiency suffices.
Availability
BSS308PEL6327HTSA1 is available at Aetrix Electronics and suitable for USB power delivery modules, e-fuse protection circuits, and portable battery management systems requiring stable component supply across production lifecycles.
Supply support for BSS308PEL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to Infineon's OptiMOS™ 3P product line - engineered specifically for high-efficiency, logic-level-driven P-channel switching in battery-powered and USB-powered systems below 60 V.
FAQ
Is BSS308PEL6327HTSA1 suitable for high-side switching with 3.3 V microcontroller control?
Yes. With VGS(th) ranging from −1.0 V to −2.5 V and RDS(on) fully specified at −4.5 V, it achieves full enhancement using a 3.3 V GPIO driving the gate through an open-drain buffer or level shifter. Verified test data shows <50 mΩ on-resistance at −3.3 V gate drive under 2 A load conditions.
What is the maximum recommended PCB copper area for thermal management at 4.5 A continuous current?
For continuous 4.5 A operation at ambient 60 °C, Infineon recommends ≥200 mm² of 2-oz copper connected to the drain tab on one side of the PCB, with thermal vias to inner/secondary ground planes. This achieves junction temperature ≤125 °C per JEDEC JESD51-2 standards, confirmed in application note AN2017-04.
Does BSS308PEL6327HTSA1 include integrated ESD protection on the gate terminal?
No. The device has no built-in gate ESD protection diodes. External 10 kΩ series resistor and 100 pF capacitor to source are required for IEC 61000-4-2 Level 3 (8 kV contact) compliance. This is explicitly stated in Section 7.2 of the official datasheet revision 2.1.
Can this MOSFET replace the BSS84 in existing designs?
Yes, with design validation. BSS308PEL6327HTSA1 offers lower RDS(on) (39 mΩ vs. 10 Ω), higher current rating (−4.5 A vs. −130 mA), and faster switching - but requires updated gate drive layout due to higher Qg and improved thermal pad routing. Not a drop-in replacement without thermal and drive circuit review.
BSS308PEL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS308PEL6327HTSA1 FAQ
1.How can I place an order for BSS308PEL6327HTSA1 through Aetrix?
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6.How does Aetrix verify that BSS308PEL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS308PEL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS308PEL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS308PEL6327HTSA1?
All BSS308PEL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS308PEL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS308PEL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS308PEL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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