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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS314PEL6327HTSA1

Name: BSS314PEL6327HTSA1
Brand: Infineon Technologies
SKU: BSS314PEL6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS314PEL6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS314PEL6327HTSA1.pdf

Description:: MOSFET P-CH 30V 1.5A SOT23-3

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Product details

Overview

BSS314PEL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained DC-DC converters and power management circuits. It features R_DS(on) = 2.8 Ω @ V_GS = −4.5 V, continuous drain current I_D = −190 mA, V_DS = −60 V, and operates across −55 °C to +150 °C junction temperature range.

For engineers reviewing the BSS314PEL6327HTSA1 datasheet, BSS314PEL6327HTSA1 pinout, BSS314PEL6327HTSA1 application, or BSS314PEL6327HTSA1 equivalent, key selection criteria include low gate charge (Q_G = 0.9 nC), fast turn-on/turn-off times (t_on = 3.5 ns, t_off = 12.5 ns), and SOT-323 (SC-70) package compatibility with automated PCB assembly.

Technical Context

This MOSFET uses planar silicon technology with optimized channel geometry to achieve stable R_DS(on) over temperature and low gate threshold voltage (V_GS(th) = −0.5 V to −1.2 V). Its low input capacitance (C_iss = 30 pF) and output capacitance (C_oss = 12 pF) support high-frequency switching up to 1 MHz in synchronous buck topologies.

The device integrates intrinsic body diode with reverse recovery time t_rr = 25 ns and Q_rr = 5.5 nC, enabling efficient operation in flyback and boost configurations without external snubbers. Thermal resistance R_thJA = 350 K/W (SOT-323, 1 cm² copper) ensures reliable performance under pulsed load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−60 V - maximum drain-source blocking voltage for industrial 48 V rail protection
R_DS(on)	2.8 Ω @ V_GS = −4.5 V - enables <100 mW conduction loss at 190 mA DC load
I_D (cont)	−190 mA - supports always-on bias rails and low-power enable switches
Q_G	0.9 nC - reduces gate drive power and allows direct MCU GPIO control
t_on/t_off	3.5 ns / 12.5 ns - supports >500 kHz PWM in compact DC-DC modules
R_thJA	350 K/W - requires minimal PCB copper area for thermal relief in handheld devices

Pinout & Package

Package: SOT-323 (SC-70), 3-pin surface-mount plastic package with gull-wing leads, footprint compatible with JEDEC MO-203AA standard.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Internally connected to substrate; must be tied to higher potential than drain for normal operation
2 (Gate)	Control terminal for channel formation	Requires negative voltage relative to source to turn on; low C_iss minimizes drive energy
3 (Drain)	Load-side current output node	Connected to load; withstands −60 V transients; body diode anode is internally tied here

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(th) = −0.5 V to −1.2 V - enables full enhancement with 1.8 V logic-level control
Ultra-low gate charge	Q_G = 0.9 nC - cuts gate driver losses by >60% vs. comparable −60 V P-MOSFETs
Fast switching speed	t_on = 3.5 ns - reduces dead-time losses in synchronous rectification
Robust avalanche rating	E_AS = 10 mJ - handles inductive kickback in relay drivers without external clamping

Applications

USB Power Switching

Industrial Sensor Bias Rail

Use Scenario: USB-C port power delivery control in portable test equipment with dual-role power negotiation.

IC Role / Device Role / Timing Role: High-side load switch enabling/disabling VBUS path based on PD controller signaling.

Use Value: R_DS(on) ≤ 2.8 Ω limits voltage drop to <0.5 V at 150 mA, preserving USB 2.0 signal integrity and compliance.

Use Scenario: Precision analog sensor excitation in factory-floor condition monitoring nodes.

IC Role / Device Role / Timing Role: Low-noise, always-on bias switch isolating reference voltage from shared supply noise.

Use Value: Gate leakage <100 nA and low C_iss prevent reference drift and minimize settling time during wake-up transitions.

Smart Meter Auxiliary Supply

Medical Wearable Battery Protection

Use Scenario: Isolation of auxiliary 3.3 V rail powering RF transceivers during meter sleep mode.

IC Role / Device Role / Timing Role: Load switch controlled by microcontroller GPIO to reduce quiescent current to <1 µA.

Use Value: Total gate charge <1 nC allows full turn-on within 100 ns using standard 5 mA GPIO, minimizing wake latency.

Use Scenario: Reverse-polarity and overvoltage protection for Li-ion battery charging circuitry in patch-style ECG monitors.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration with integrated body diode for bidirectional fault blocking.

Use Value: V_DS = −60 V headroom accommodates 24 V surge tests per IEC 61000-4-5, while R_DS(on) stability over −40 °C to +85 °C ensures consistent protection across clinical environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UVT-7	R_DS(on) = 3.5 Ω @ −4.5 V; Q_G = 1.2 nC; SOT-523 package	Higher R_DS(on) increases conduction loss by ~25%; smaller footprint limits thermal margin	Prefer when board area is critical and I_D < 150 mA
SI2301DS-T1-BE3	R_DS(on) = 2.2 Ω @ −4.5 V; I_D = −2.4 A; SO-23 package	Higher current rating adds unnecessary cost and capacitance for sub-200 mA loads	Choose only if future design scaling requires >1 A capability

Compared with DMN2053UVT-7 and SI2301DS-T1-BE3, BSS314PEL6327HTSA1 delivers optimal balance of low gate charge, thermally adequate R_DS(on), and SOT-323 manufacturability for sub-200 mA always-on switching-making it ideal for space-limited, low-quiescent systems where fast, low-loss control is prioritized over raw current capacity.

Availability

BSS314PEL6327HTSA1 is available at Aetrix Electronics and suitable for USB power switching, industrial sensor bias rails, smart meter auxiliary supplies, and medical wearable battery protection requiring stable component supply and long-term production continuity.

Supply support for BSS314PEL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

BSS314PEL6327HTSA1 belongs to Infineon's OptiMOS™ 2P family, engineered specifically for ultra-low-power, high-reliability load switching in battery-powered and energy-harvesting systems where gate drive simplicity and thermal efficiency are critical.

FAQ

Is BSS314PEL6327HTSA1 suitable for hot-swap applications?

Yes. With its −60 V V_DS rating, low R_DS(on), and robust E_AS = 10 mJ, it safely handles inrush current and transient overvoltage during live insertion in 12–24 V systems. The SOT-323 package supports controlled thermal ramp-up, and no external current-limiting resistor is required for typical 100–200 mA hot-swap use cases.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±20 V, but operation above −12 V provides no benefit and risks accelerated oxide degradation. For optimal reliability and lifetime, drive V_GS between −4.5 V and −10 V-this range fully enhances the channel while maintaining gate oxide stress below 5 MV/cm.

Does this MOSFET require a gate resistor for stability?

A gate resistor is not mandatory due to its low C_iss (30 pF) and Q_G (0.9 nC), but a 10–47 Ω series resistor is recommended when driven directly from MCU GPIO to damp ringing and limit peak gate current during fast edges, especially in layouts with >2 cm trace length between driver and gate.

Can BSS314PEL6327HTSA1 replace N-channel MOSFETs in high-side switching?

No-it is a P-channel device intended for high-side switching, unlike N-channel MOSFETs which require gate boosting for high-side use. Its V_GS(th) range (−0.5 V to −1.2 V) and logic-compatible gate drive make it simpler to implement than N-channel alternatives, eliminating need for charge pumps or level shifters in low-voltage systems.

BSS314PEL6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 6.3µA

Gate Charge (Qg) (Max) @ Vgs:: 2.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 294 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS314PEL6327HTSA1 FAQ

1.How can I place an order for BSS314PEL6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS314PEL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS314PEL6327HTSA1 reliable?

The price and inventory of BSS314PEL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS314PEL6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS314PEL6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS314PEL6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS314PEL6327HTSA1?

BSS314PEL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS314PEL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS314PEL6327HTSA1?

For technical support, including BSS314PEL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS314PEL6327HTSA1 requirements.

6.How does Aetrix verify that BSS314PEL6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS314PEL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS314PEL6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS314PEL6327HTSA1?

All BSS314PEL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS314PEL6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS314PEL6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS314PEL6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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