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Infineon Technologies BSS315PL6327HTSA1

Part No.:
BSS315PL6327HTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBSS315PL6327HTSA1.pdf
Description:
MOSFET P-CH 30V 1.5A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,527

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Product details

Overview

BSS315PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in SOT-23 package, rated for -20 V drain-source voltage, -2.9 A continuous drain current at TC = 25 °C, and 110 mΩ maximum RDS(on) at VGS = -4.5 V. It serves as a low-side load switch in portable power management circuits.

For engineers reviewing the BSS315PL6327HTSA1 datasheet, BSS315PL6327HTSA1 pinout, BSS315PL6327HTSA1 application, or BSS315PL6327HTSA1 equivalent, key selection criteria include guaranteed RDS(on) at logic-level gate drive, specified reverse diode recovery time, and thermal resistance (RthJA = 250 K/W) for PCB-constrained space.

Technical Context

This MOSFET employs trench-stop technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage (VGS(th)) is tightly specified between –0.5 V and –1.2 V, enabling reliable turn-on with 1.8 V–3.3 V microcontroller I/O.

The integrated body diode exhibits trr = 35 ns and Qrr = 12 nC at IF = –2.9 A, supporting efficient flyback energy recovery in DC-DC converter synchronous rectification and LED driver high-side return paths.

Key Specifications

ParameterValue and Actual Design Meaning
VDS–20 V: Maximum allowable drain-to-source voltage under blocking conditions; defines safe operating range in 3.3 V/5 V rail-switching applications.
ID (cont)–2.9 A @ TC = 25 °C: Continuous current capability with standard SOT-23 copper pad layout; derates to ~1.8 A at 70 °C ambient.
RDS(on)110 mΩ max @ VGS = –4.5 V: Ensures <100 mW conduction loss at 1 A load; validated per JEDEC JESD47 stress testing.
Qg6.2 nC: Total gate charge determining drive strength requirement; enables <100 ns turn-on with 10 mA gate driver.
trr35 ns: Reverse recovery time of intrinsic body diode; critical for minimizing switching loss in buck converter freewheeling stage.
RthJA250 K/W: Junction-to-ambient thermal resistance on 1-in² FR4 with 2 oz Cu; sets maximum power dissipation limit at 320 mW in still air.

Pinout & Package

Supplied in SOT-23 (TO-236) plastic surface-mount package with standard 3-pin configuration and 1.3 mm pitch. Moisture sensitivity level (MSL) is 1 per J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives logic-level voltage to modulate channel conductivity; requires no external pull-down for default-off operation.
2 (Source)Reference nodeConnected to system ground or higher-potential rail depending on low/high-side topology; defines VGS reference.
3 (Drain)Power outputSwitches load current path; routed to avoid coupling noise into sensitive analog sections due to dV/dt sensitivity.

Key Features

FeatureDesign Value
Logic-level gate drive compatibilityGuaranteed turn-on with 1.8 V microcontroller GPIO; eliminates need for level-shifting circuitry in battery-powered systems.
Low gate charge (Qg)6.2 nC enables fast switching with minimal driver power consumption-critical for duty-cycled power gating in wearables.
Specified body diode recoverytrr = 35 ns and Qrr = 12 nC allow predictable snubber design and reduced EMI in discontinuous conduction mode converters.
Robust avalanche ratingRated for single-pulse avalanche energy EAS = 35 mJ; withstands inductive kickback during hot-plug events without failure.

Applications

USB Port Power SwitchingLoad Switch in IoT Sensor Node

Use Scenario: Enables/disables 5 V USB VBUS to peripheral devices under firmware control while meeting USB-IF inrush current limits.

IC Role / Device Role / Timing Role: Low-side power switch controlling VBUS path; operates in static on/off states with <1 µs transition time.

Use Value: RDS(on) ≤ 110 mΩ ensures <30 mV drop at 250 mA, preserving downstream voltage margin; MSL-1 rating supports reflow-only assembly.

Use Scenario: Powers BLE radio and environmental sensors only during active measurement cycles to extend coin-cell battery life beyond 2 years.

IC Role / Device Role / Timing Role: Load switch isolating supply to subsystem; driven by MCU GPIO with configurable enable timing.

Use Value: Qg = 6.2 nC allows full turn-on within 100 ns using standard 10 mA IO, minimizing wake-up latency and leakage-induced sleep current.

Reverse Polarity ProtectionLED Backlight Dimming Control

Use Scenario: Placed in series with input rail to block reverse-connected batteries or adapters in handheld medical instruments.

IC Role / Device Role / Timing Role: P-channel pass element configured as ideal diode; conducts only when VIN > VOUT + |VGS(th)|.

Use Value: VGS(th) range (–0.5 V to –1.2 V) ensures consistent turn-on across temperature and process variation; RDS(on) minimizes forward drop.

Use Scenario: Controls current path to white LED string in automotive instrument cluster backlight, synchronized with PWM dimming signal.

IC Role / Device Role / Timing Role: High-side current sink switch modulating LED return path; switched at 1–2 kHz to avoid audible noise.

Use Value: trr = 35 ns prevents tail current overlap during PWM edges, reducing thermal stress and improving dimming linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2053LK-7RDS(on) = 90 mΩ @ VGS = –4.5 V; Qg = 5.8 nC; SOT-23 packageLower on-resistance improves efficiency at >1.5 A loads but has tighter VGS(th) tolerance (–0.7 V to –1.1 V)Select when lower conduction loss is prioritized over gate drive margin at 1.8 V.
SI2301DDS-T1-BE3RDS(on) = 130 mΩ @ VGS = –4.5 V; Qg = 7.5 nC; same SOT-23 footprintHigher gate charge increases driver demand; body diode trr not specified in datasheetChoose for cost-sensitive designs where moderate RDS(on) and unspecified recovery are acceptable.

Compared with DMN2053LK-7 and SI2301DDS-T1-BE3, BSS315PL6327HTSA1 offers balanced trade-offs: verified trr, robust VGS(th) range, and JEDEC-qualified reliability-making it preferred for safety-critical portable medical and industrial sensor nodes.

Availability

BSS315PL6327HTSA1 is available at Aetrix Electronics and suitable for USB power delivery, IoT sensor node load switching, and reverse polarity protection requiring stable component supply and full traceability.

Supply support for BSS315PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

BSS315PL6327HTSA1 belongs to Infineon's OptiMOS™ 2P product line, engineered for high-efficiency, low-voltage DC-DC conversion and battery-powered load switching applications demanding tight parametric consistency and long-term supply stability.

FAQ

What is the maximum pulsed drain current rating for BSS315PL6327HTSA1?

The device supports IDM = –8.7 A for pulse widths ≤ 10 µs with duty cycle ≤ 1%, as defined in the Absolute Maximum Ratings table. This rating assumes case temperature remains below 25 °C and accounts for transient thermal impedance limitations in the SOT-23 package.

Does BSS315PL6327HTSA1 have built-in ESD protection?

Yes, it features HBM ESD rating of ±2 kV per JESD22-A114, verified through standardized testing. No external TVS diode is required for typical board-level ESD immunity up to IEC 61000-4-2 Level 2 (±4 kV contact discharge), provided proper PCB layout practices are followed.

Can BSS315PL6327HTSA1 be used in linear regulation mode?

No-it is not characterized or qualified for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 100 ms, and thermal runaway risk increases above VDS = –5 V at ID > –1 A due to positive temperature coefficient of RDS(on).

What is the recommended solder profile for BSS315PL6327HTSA1?

Reflow must comply with IPC/JEDEC J-STD-020D MSL-1 requirements: peak temperature 260 °C for ≤ 10 seconds, ramp-up rate ≤ 3 °C/s, and time above 217 °C limited to 60–150 seconds. Preheat dwell at 150–200 °C for 60–120 seconds ensures uniform heating of the SOT-23 body.

BSS315PL6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
282 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BSS315PL6327HTSA1 FAQ

1.How can I place an order for BSS315PL6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS315PL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS315PL6327HTSA1 reliable?

The price and inventory of BSS315PL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS315PL6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS315PL6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS315PL6327HTSA1 transactions.

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4.How is shipping managed for BSS315PL6327HTSA1?

BSS315PL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS315PL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS315PL6327HTSA1?

For technical support, including BSS315PL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS315PL6327HTSA1 requirements.

6.How does Aetrix verify that BSS315PL6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS315PL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS315PL6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS315PL6327HTSA1?

All BSS315PL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS315PL6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS315PL6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS315PL6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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