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Infineon Technologies BSS316NL6327HTSA1
- Part No.:
- BSS316NL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS316NL6327HTSA1.pdf
- Description:
- MOSFET N-CH 30V 1.4A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,661
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Product details
Overview
BSS316NL6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in a SOT-23 package, rated for 60 V drain-source voltage, 340 mA continuous drain current at TA = 25 °C, and 1.4 Ω typical RDS(on) at VGS = 10 V. It serves as a low-side load switch in portable power management circuits.
For engineers reviewing the BSS316NL6327HTSA1 datasheet, BSS316NL6327HTSA1 pinout, BSS316NL6327HTSA1 application, or BSS316NL6327HTSA1 equivalent, key selection criteria include its 60 V VDS, 340 mA ID, 1.4 Ω RDS(on), fast 3.5 ns turn-on time, and SOT-23 footprint compatibility with space-constrained PCB layouts.
Technical Context
This MOSFET employs planar silicon technology with optimized gate oxide thickness to achieve stable threshold voltage (VGS(th) = 1.0–2.5 V) and low gate charge (QG = 1.8 nC). Its body diode exhibits 30 ns reverse recovery time and 0.85 V forward voltage at IF = 340 mA.
The device operates in enhancement mode only, requiring positive gate drive relative to source. It supports pulsed drain currents up to 1.2 A and features guaranteed avalanche energy rating of 10 mJ per pulse under unclamped inductive switching conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum allowable drain-to-source voltage before breakdown; defines safe operating range in 24–48 V supply rails. |
| ID (continuous) | 340 mA at TA = 25 °C - Continuous DC load current capability without heatsinking; suitable for LED drivers and sensor biasing. |
| RDS(on) | 1.4 Ω (typ.) at VGS = 10 V - On-resistance directly determines conduction loss; enables <100 mW dissipation at 340 mA. |
| QG | 1.8 nC - Total gate charge required to fully switch; enables efficient driving from low-current GPIOs or logic buffers. |
| tON | 3.5 ns - Turn-on delay time; supports high-frequency PWM switching up to ~100 MHz in small-signal control paths. |
| EAS | 10 mJ - Unclamped inductive switching avalanche energy rating; ensures robustness against inductive kickback in relay or solenoid drive. |
Pinout & Package
Package: SOT-23 (TO-236AB), surface-mount, 3-pin plastic case with standard JEDEC outline and thermal pad omitted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives logic-level voltage to modulate channel conductivity; requires no external pull-down for default-off behavior. |
| 2 (Source) | Reference node | Common return path for load current; tied to system ground in low-side switch configurations. |
| 3 (Drain) | Power output | Connects to load anode or positive rail; carries switched current and must be routed with adequate copper area for thermal relief. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = 4.5 V, enabling direct interface with 3.3 V or 5 V microcontrollers without level-shifting. |
| Low gate charge | 1.8 nC total gate charge minimizes driver power consumption and reduces EMI during fast transitions. |
| Fast switching | 3.5 ns tON, 12 ns tOFF, and 30 ns trr support high-efficiency digital power control in battery-powered systems. |
| Avalanche-rated | 10 mJ single-pulse EAS provides built-in protection against inductive transients in relay, motor, or solenoid interfaces. |
Applications
| LED Indicator Control | USB Port Power Switch |
|---|---|
Use Scenario: Driving discrete status LEDs on embedded control panels with 3.3 V MCU GPIOs. IC Role / Device Role / Timing Role: Low-side switch enabling/disabling LED current path; operates in static on/off mode with occasional toggling. Use Value: 1.4 Ω RDS(on) limits voltage drop to <500 mV at 340 mA, preserving LED brightness while dissipating <120 mW. | Use Scenario: Enabling/disabling +5 V power to USB peripheral ports under host controller command. IC Role / Device Role / Timing Role: Load switch isolating downstream USB VBUS; controlled via PMIC or microcontroller GPIO. Use Value: 60 V VDS margin prevents failure during hot-plug transients; 340 mA rating covers full USB 2.0 port load. |
| Sensor Biasing Circuit | IoT Node Power Gating |
Use Scenario: Providing regulated bias current to analog sensors (e.g., thermistors, photodiodes) in battery-operated nodes. IC Role / Device Role / Timing Role: Precision current source enable switch; activated only during measurement cycles to minimize quiescent draw. Use Value: 1.8 nC QG allows clean switching with minimal capacitive loading on MCU pins; low leakage (<100 nA) preserves sleep-state battery life. | Use Scenario: Shutting down non-critical subsystems (e.g., RF transceiver, display backlight) between wake cycles in LPWAN edge devices. IC Role / Device Role / Timing Role: System-level power gate managed by real-time OS scheduler or hardware timer. Use Value: Fast 3.5 ns tON enables sub-microsecond power-up latency; SOT-23 footprint saves board space in compact modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage, low-current MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3028LSD-13 | RDS(on) = 2.2 Ω (typ.) at VGS = 4.5 V; higher on-resistance than BSS316NL6327HTSA1's 1.4 Ω at 10 V. | Less suitable for 3.3 V logic drive due to higher VGS(th) distribution (1.2–2.2 V); requires stronger gate drive for full enhancement. | Select when cost sensitivity outweighs efficiency needs and gate drive voltage exceeds 4.5 V. |
| FDN306P | P-channel counterpart with –20 V VDS, –2.2 A ID; complementary topology requiring inverted control signal. | Used in high-side switching where source connects to supply rail; incompatible with low-side layout without circuit redesign. | Choose only for high-side configuration or where inverted logic control is acceptable and higher current is needed. |
Compared with DMN3028LSD-13 and FDN306P, BSS316NL6327HTSA1 offers superior RDS(on) at 10 V, faster switching, and tighter VGS(th) distribution-making it optimal for 3.3/5 V GPIO-driven low-side loads below 340 mA.
Availability
BSS316NL6327HTSA1 is available at Aetrix Electronics and suitable for LED indicator control, USB port power switching, and sensor biasing applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.
Supply support for BSS316NL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
BSS316NL6327HTSA1 belongs to Infineon's OptiMOS™ 2 family, designed specifically for high-efficiency, low-power switching in portable and space-constrained applications such as wearables, IoT nodes, and consumer electronics power rails.
FAQ
Is BSS316NL6327HTSA1 suitable for 3.3 V microcontroller GPIO drive?
Yes. Its guaranteed VGS(th) max of 2.5 V and RDS(on) = 2.2 Ω at VGS = 4.5 V ensure reliable enhancement with 3.3 V logic. At 3.3 V, RDS(on) rises to ~3.5 Ω, limiting continuous ID to ~200 mA-still sufficient for most indicator and biasing loads.
What is the maximum pulsed drain current rating?
The datasheet specifies ID(pulse) = 1.2 A for pulse width ≤ 10 µs and duty cycle ≤ 1%, validated under TA = 25 °C. This rating assumes adequate PCB copper area for transient heat dissipation and is not sustainable in continuous operation.
Does BSS316NL6327HTSA1 have integrated ESD protection?
No. It lacks on-chip ESD protection diodes. External TVS or series resistors are recommended on gate and drain lines in environments with >2 kV HBM risk, especially in handheld or field-deployed equipment.
Can this MOSFET replace BSS138 in existing designs?
Yes, with verification. BSS316NL6327HTSA1 has lower RDS(on) (1.4 Ω vs. 3.5 Ω), higher VDS (60 V vs. 50 V), and faster switching. Pinout is identical (SOT-23, G-S-D), but gate capacitance differs (Ciss = 45 pF vs. 30 pF), potentially affecting driver stability in high-frequency PWM.
BSS316NL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 94 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS316NL6327HTSA1 FAQ
1.How can I place an order for BSS316NL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS316NL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS316NL6327HTSA1 reliable?
The price and inventory of BSS316NL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS316NL6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BSS316NL6327HTSA1?
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4.How is shipping managed for BSS316NL6327HTSA1?
BSS316NL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS316NL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS316NL6327HTSA1?
For technical support, including BSS316NL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS316NL6327HTSA1 requirements.
6.How does Aetrix verify that BSS316NL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS316NL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS316NL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS316NL6327HTSA1?
All BSS316NL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS316NL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS316NL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS316NL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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