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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS670S2L

Name: BSS670S2L
Brand: Infineon Technologies
SKU: BSS670S2L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS670S2L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS670S2L.pdf

Description:: MOSFET N-CH 55V 540MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,232

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Product details

Overview

BSS670S2L from Infineon Technologies is an N-channel enhancement-mode logic-level MOSFET in PG-SOT23 package, rated for 55 V V_DS, 650 mΩ R_DS(on) at V_GS = 10 V and I_D = 270 mA, and qualified to AEC-Q101 for automotive use. It serves as a low-side switch in compact DC-DC buck converters and LED drivers where space-constrained logic-level gate drive is required.

For engineers reviewing the BSS670S2L datasheet, BSS670S2L pinout, BSS670S2L application, or BSS670S2L equivalent, key selection criteria include its 1.2–2.0 V gate threshold voltage, 0.36 W power dissipation at T_A = 25 °C, avalanche energy rating (E_AS = 8.1 mJ), and SMD-compatible PG-SOT23 footprint with drain-connected pin 3 for thermal relief.

Technical Context

This MOSFET operates in enhancement mode with logic-level gate drive compatibility (V_GS(th) max 2.0 V), enabling direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting. Its R_DS(on) exhibits strong temperature dependence-rising from ~346 mΩ at 25 °C to ~1.6 Ω at 150 °C under V_GS = 10 V-requiring derating in high-ambient designs.

The device integrates an intrinsic body diode with t_rr = 51–64 ns and Q_rr = 22–28 nC, supporting synchronous rectification in low-power buck topologies. Its gate charge profile (Q_g = 1.7–2.26 nC, Q_gd = 0.57–0.86 nC) enables fast switching with minimal driver loss at frequencies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	55 V - supports input rails up to 48 V nominal systems with margin for transients
R_DS(on) @ V_GS = 10 V	650 mΩ max - determines conduction loss in continuous 270 mA loads (e.g., <175 mW at full current)
I_D Continuous @ T_A = 25 °C	0.54 A - usable in low-current switching nodes such as sensor biasing or auxiliary rail control
V_GS(th)	1.2–2.0 V - ensures reliable turn-on with standard logic outputs; avoids marginal switching near 1.8 V IO
E_AS	8.1 mJ - provides single-pulse avalanche ruggedness for inductive load switching without external snubbers
t_rr / Q_rr	51–64 ns / 22–28 nC - enables efficient freewheeling in non-synchronous buck converters up to ~500 kHz
P_tot @ T_A = 25 °C	0.36 W - limits usable current in unheatsinked PCB layouts; requires thermal pad design on pin 3 (drain)

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount plastic package with exposed drain pad (pin 3) for thermal conduction. Marking: "BSs". Tape-and-reel packaging (L6327: 3000 pcs/reel).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Logic-level control input; low capacitance (C_iss = 56–75 pF) minimizes driver loading
Pin 2	Source	Power return path; tied to ground or low-side reference; internal connection to substrate
Pin 3	Drain	Main power output node; thermally connected to PCB copper area via exposed pad for R_thJS = 290 K/W

Key Features

Feature	Design Value
AEC-Q101 qualified	Valid for automotive applications including body electronics and infotainment power stages
Logic-level gate drive	V_GS(th) ≤ 2.0 V enables direct interface with 3.3 V/5 V MCUs and PMICs without gate drivers
Avalanche-rated	Guaranteed 8.1 mJ single-pulse energy absorption eliminates need for external clamping in inductive switching
Thermally optimized drain pad	Exposed pin 3 allows >300 mm² copper pour to reduce junction-to-ambient thermal resistance by ~20%
Low gate charge	Q_g = 1.7–2.26 nC reduces switching losses and driver power requirements in high-frequency operation

Applications

Automotive Interior Lighting

USB-C Power Path Control

Use Scenario: Switching current to LED strings in door handle illumination and ambient lighting modules.

IC Role / Device Role / Timing Role: Low-side constant-current switch controlled by PWM from body controller MCU.

Use Value: Logic-level gate ensures full turn-on with 3.3 V MCU outputs; R_DS(on) < 0.825 Ω keeps self-heating below 100 mW at 350 mA.

Use Scenario: Enabling/disabling 5 V power delivery path in portable USB-C accessories.

IC Role / Device Role / Timing Role: Load switch for hot-plug protection and inrush limiting in 5 V rail.

Use Value: Low Q_g and fast t_f = 24–32 ns enable clean power sequencing without overshoot or latch-up.

Industrial Sensor Bias Supply

Low-Power Buck Converter Sync FET

Use Scenario: Providing regulated 3.3 V bias to analog sensors in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side or low-side switch in discrete LDO bypass or pre-regulator stage.

Use Value: AEC-Q101 qualification supports extended temperature operation (−40 to +125 °C ambient); V_DS = 55 V accommodates 24 V industrial bus transients.

Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for FPGA I/O banks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency.

Use Value: Body diode t_rr = 51–64 ns and Q_rr = 22–28 nC minimize reverse recovery loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 450 mΩ @ V_GS = 4.5 V; higher ID rating (0.75 A); same SOT-23 package	Better suited for higher-current 3.3 V-driven loads; slightly larger gate charge (Q_g = 2.5 nC)	Prefer when lower conduction loss at 4.5 V drive is critical and board layout allows same footprint
AO3400	R_DS(on) = 40 mΩ @ V_GS = 10 V; higher P_tot (1.4 W); SOT-23 but not AEC-Q101 qualified	Enables higher continuous current (up to 5.7 A pulsed); unsuitable for automotive due to qualification gap	Select only for cost-sensitive industrial or consumer applications where qualification is not required

Compared with DMN2004LK-7 and AO3400, BSS670S2L trades higher R_DS(on) for guaranteed automotive qualification and tighter V_GS(th) distribution-making it optimal for safety-aware, low-power logic-switching roles where reliability outweighs raw efficiency.

Availability

BSS670S2L is available at Aetrix Electronics and suitable for automotive interior lighting, USB-C power path control, and industrial sensor bias supply requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSS670S2L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The OptiMOS™ Buck Converter series-including BSS670S2L-is engineered for high-efficiency, space-constrained DC-DC conversion in automotive and industrial applications, emphasizing logic-level drivability, thermal robustness, and AEC-Q101 compliance.

FAQ

Is BSS670S2L suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.2 V to 2.0 V and guaranteed R_DS(on) ≤ 825 mΩ at V_GS = 4.5 V, the device fully enhances using standard 3.3 V GPIO outputs. Its low gate charge (Q_g = 1.7–2.26 nC) further ensures fast, low-loss switching without external driver circuitry.

What is the maximum continuous drain current at 85 °C ambient?

At T_A = 85 °C, the maximum continuous drain current is approximately 0.32 A, derived from the derating curve on page 4 of the datasheet. This assumes standard PCB mounting with 6 cm² copper area on pin 3 (drain) and no forced airflow.

Does BSS670S2L have integrated ESD protection?

No. The device does not include on-chip ESD protection diodes. External TVS or RC filtering is recommended on the gate line if exposed to handling or system-level ESD events, especially in automotive assembly environments per ISO 10605.

Can BSS670S2L replace a BSS138 in existing designs?

Not directly. While both are SOT-23 N-channel MOSFETs, BSS138 has higher V_DS (50 V), much higher R_DS(on) (~3.5 Ω), and different gate threshold (0.8–1.5 V). BSS670S2L offers lower on-resistance and AEC-Q101 qualification but requires verification of gate drive strength and thermal margin in the target layout.

BSS670S2L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 540mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 270mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 2.7µA

Gate Charge (Qg) (Max) @ Vgs:: 2.26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 75 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS670S2L FAQ

1.How can I place an order for BSS670S2L through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS670S2L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS670S2L reliable?

The price and inventory of BSS670S2L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS670S2L is usually 5 days.

3.What payment methods are accepted for BSS670S2L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS670S2L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS670S2L?

BSS670S2L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS670S2L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS670S2L?

For technical support, including BSS670S2L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS670S2L requirements.

6.How does Aetrix verify that BSS670S2L is sourced from the original manufacturer or authorized distributors?

All BSS670S2L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS670S2L meets industry standards.

7.What is the process for return or replacement of BSS670S2L?

All BSS670S2L units undergo pre-shipment inspection (PSI). If there is an issue with BSS670S2L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS670S2L part is unused and in its original packaging.

Return procedure for BSS670S2L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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