Infineon Technologies BSS670S2LL6327HTSA1
- Part No.:
- BSS670S2LL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS670S2LL6327HTSA1.pdf
- Description:
- MOSFET N-CH 55V 540MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,374
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Product details
Overview
BSS670S2LL6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level MOSFET in PG-SOT23 package, rated for 55 V VDS, 650 mΩ RDS(on) at VGS = 10 V and ID = 270 mA, with AEC-Q101 qualification for automotive applications. It delivers 0.54 A continuous drain current at 25 °C ambient and supports buck converter topologies in space-constrained DC-DC modules.
For engineers reviewing the BSS670S2LL6327HTSA1 datasheet, BSS670S2LL6327HTSA1 pinout, BSS670S2LL6327HTSA1 application, or BSS670S2LL6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), low RDS(on) stability over temperature, avalanche energy rating (EAS = 8.1 mJ), and SMD thermal performance on FR4 PCBs.
Technical Context
This MOSFET operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct interface with 3.3 V and 5 V microcontroller GPIOs without level-shifting. Its optimized charge characteristics-Qg = 1.7–2.26 nC, Qgd = 0.57–0.86 nC-support efficient switching in high-frequency synchronous buck regulators up to 1 MHz.
The device integrates an intrinsic body diode with trr = 51–64 ns and Qrr = 22–28 nC, suitable for freewheeling in non-synchronous converters. Thermal resistance RthJS = 290 K/W and RthJA = 300–350 K/W (on 6 cm² copper) enables operation up to 150 °C junction temperature under defined PCB layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 24 V automotive rail and industrial 36 V input stages |
| RDS(on) @ VGS = 10 V | 650 mΩ max - Ensures ≤350 mW conduction loss at 0.54 A DC load |
| ID (continuous) | 0.54 A @ TA = 25 °C - Supports compact point-of-load converters with minimal heatsinking |
| EAS | 8.1 mJ - Withstands single-pulse inductive energy during hard-switching events |
| VGS(th) | 1.2–2.0 V - Compatible with 3.3 V logic control without external gate driver |
| tr/tf | 25–37 ns / 24–32 ns - Enables fast switching with low overlap loss in 500 kHz–1 MHz designs |
| Qg | 1.7–2.26 nC - Reduces gate drive power requirement for low-power MCU-based control |
Pinout & Package
Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, 3-pin plastic package with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Logic-level input node; requires <20 V absolute max rating; low input capacitance (Ciss = 56–75 pF) |
| Pin 2 | Source | Reference node for gate drive; tied to power ground in low-side switch configuration |
| Pin 3 | Drain | Main current output path; connected to PCB copper pour for thermal dissipation (RthJS = 290 K/W) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and ESD |
| Logic-level gate drive | VGS(th) ≤ 2.0 V ensures full enhancement with 3.3 V microcontrollers and PMICs |
| Low RDS(on) temperature coefficient | RDS(on) increases only ~1.4× from 25 °C to 125 °C (typical), improving thermal stability |
| Integrated avalanche-rated body diode | Supports non-synchronous buck operation with trr = 51–64 ns and Qrr = 22–28 nC |
| Optimized gate charge profile | Qgd/Qg ratio ≈ 25–38% minimizes Miller-induced switching delay and shoot-through risk |
Applications
| Automotive Body Control Module (BCM) | Industrial Sensor Power Supply |
|---|---|
Use Scenario: Driving LED clusters and solenoid valves in door modules and lighting control units. IC Role / Device Role / Timing Role: Low-side switch in constant-current LED drivers and 12 V/24 V load switching circuits. Use Value: Logic-level gate enables direct MCU control; 55 V rating covers load-dump transients; AEC-Q101 ensures reliability in harsh environments. | Use Scenario: Providing regulated 3.3 V or 5 V power to analog sensors and signal conditioners in factory automation nodes. IC Role / Device Role / Timing Role: Pass element in linear post-regulator or synchronous rectifier in isolated flyback secondary side. Use Value: Low RDS(on) reduces dropout and self-heating; small SOT23 footprint saves board area in dense sensor nodes. |
| USB-C Power Delivery Sink | Smart Home Actuator Driver |
Use Scenario: Controlling VBUS discharge path and auxiliary power switches in USB-C PD sink implementations. IC Role / Device Role / Timing Role: Fast-turnoff switch for controlled VBUS ramp-down and fault isolation. Use Value: Fast tf ≤ 32 ns and low Qg enable precise timing control; ±20 V VGS rating accommodates transient clamping circuits. | Use Scenario: Driving small DC motors and latching relays in smart thermostats and window actuators. IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge motor drivers or unidirectional relay drivers. Use Value: Avalanche rating protects against inductive kickback; 0.54 A ID supports typical 300–500 mA actuator loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS138W,115 (Nexperia) | VDS = 50 V, RDS(on) = 1.5 Ω @ VGS = 4.5 V, lower ID (0.22 A) | Not rated for automotive; lacks AEC-Q101 and avalanche energy spec | Use where cost sensitivity outweighs automotive compliance and higher current capability |
| DMN2004LK-7 (Diodes Inc.) | VDS = 20 V, RDS(on) = 400 mΩ @ VGS = 4.5 V, higher ID (0.75 A) | Lower voltage rating limits use to 12 V systems only; no AEC-Q101 | Select when operating exclusively below 15 V and requiring lower RDS(on) at 4.5 V drive |
Compared with BSS670S2LL6327HTSA1, BSS138W offers lower cost but reduced ruggedness and current handling, while DMN2004LK provides better conduction efficiency at 4.5 V but cannot withstand automotive load-dump transients due to its 20 V rating.
Availability
BSS670S2LL6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor power supplies, USB-C PD sink subsystems, and smart home actuator drivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSS670S2LL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
The OptiMOS™ Buck Converter series targets high-efficiency, space-constrained DC-DC conversion in automotive and industrial applications, emphasizing logic-level drive, thermal robustness, and AEC-Q101 compliance.
FAQ
Is BSS670S2LL6327HTSA1 suitable for 3.3 V microcontroller gate drive?
Yes. With VGS(th) ranging from 1.2 V to 2.0 V and full enhancement achievable at VGS ≥ 4.5 V, this MOSFET reliably switches on using standard 3.3 V GPIO outputs. RDS(on) remains ≤825 mΩ at VGS = 4.5 V and ID = 270 mA, supporting low-power control without external level shifters.
What is the maximum safe operating temperature for continuous operation?
The device supports continuous operation up to Tj = 150 °C, verified by thermal characterization and AEC-Q101 testing. At TA = 70 °C, derated continuous drain current is 0.43 A. Junction temperature must be monitored via PCB layout (6 cm² copper on drain) and ambient conditions to stay within SOA limits shown in Figure 3 of the datasheet.
Does it include built-in ESD protection?
No discrete ESD protection diode is integrated. The MOSFET meets HBM ESD rating of ±2 kV per AEC-Q101, but external TVS or RC snubbers are recommended for gate protection in noisy automotive environments. Gate-source leakage IGSS is specified ≤100 nA at VGS = 20 V, confirming robust oxide integrity.
Can it replace BSS670S2L in existing designs?
Yes-BSS670S2LL6327HTSA1 is the tape-and-reel packaged version of BSS670S2L (L6327 = 3000 pcs/reel; HTSA1 = packaging code). Electrical specs, thermal behavior, and pinout are identical. No layout or firmware changes are required when migrating from loose or different reel formats.
BSS670S2LL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 650mOhm @ 270mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 2.7µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 75 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS670S2LL6327HTSA1 FAQ
1.How can I place an order for BSS670S2LL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS670S2LL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS670S2LL6327HTSA1 reliable?
The price and inventory of BSS670S2LL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS670S2LL6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BSS670S2LL6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS670S2LL6327HTSA1 transactions.
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BSS670S2LL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS670S2LL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS670S2LL6327HTSA1?
For technical support, including BSS670S2LL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS670S2LL6327HTSA1 requirements.
6.How does Aetrix verify that BSS670S2LL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS670S2LL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS670S2LL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS670S2LL6327HTSA1?
All BSS670S2LL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS670S2LL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS670S2LL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS670S2LL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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