Infineon Technologies BSS7728NL6327HTSA1
- Part No.:
- BSS7728NL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS7728NL6327HTSA1.pdf
- Description:
- MOSFET N-CH 60V 200MA SOT23-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BSS7728NL6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET with 60 V VDS, 5 Ω RDS(on) at VGS = 4.5 V, and 0.2 A continuous drain current; used in low-power load switching, LED drivers, and level-shifted gate control circuits.
For engineers reviewing the BSS7728NL6327HTSA1 datasheet, BSS7728NL6327HTSA1 pinout, BSS7728NL6327HTSA1 application, or BSS7728NL6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.3–2.3 V), dv/dt ruggedness (6 kV/µs), and SOT-23 package thermal resistance (RthJA = 350 K/W).
Technical Context
This device operates as a single N-channel power switch optimized for low-voltage logic-driven applications. Its enhancement-mode behavior requires positive gate bias to conduct, and its rated dv/dt immunity enables reliable operation in inductive switching environments without spurious turn-on.
The MOSFET features integrated body diode with 0.84–1.2 V forward voltage and 11.5–17.5 ns reverse recovery time, supporting synchronous rectification and flyback snubbing in compact DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage before avalanche conduction begins |
| RDS(on) @ VGS = 4.5 V | 4.3–7.5 Ω - on-resistance defining conduction loss in 3.3 V–5 V logic-controlled switches |
| ID (continuous) | 0.2 A @ TA = 25 °C - usable current under standard PCB footprint conditions |
| VGS(th) | 1.3–2.3 V - gate threshold enabling direct drive from 1.8 V/3.3 V microcontrollers |
| dv/dt rating | 6 kV/µs - immunity to false triggering during fast voltage transients in motor or relay loads |
| Ciss | 37–56 pF - input capacitance affecting gate drive strength and switching speed |
| Ptot | 0.36 W @ TA = 25 °C - thermal limit dictating derating above ambient temperature |
Pinout & Package
Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, lead-free, tape-and-reel (L6327: 3000 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Accepts logic-level voltage to modulate channel conductivity; requires <20 V absolute max |
| Pin 2 (Source) | Reference node | Common return path for drain current; tied to system ground or floating reference |
| Pin 3 (Drain) | Power output terminal | Connects to load or supply rail; carries switched current up to 0.2 A continuous |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.3 V enables direct interface with 1.8 V/3.3 V I/O without level-shifting |
| dv/dt ruggedness | 6 kV/µs rating prevents parasitic turn-on in inductive switching applications |
| Low gate charge | Qg = 1–1.5 nC minimizes driver power and speeds up switching transitions |
| Integrated body diode | Reverse recovery time trr = 11.5–17.5 ns supports efficient freewheeling in buck/flyback topologies |
Applications
| LED Driver Switching | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving discrete LEDs or LED strings in portable instrumentation panels with 3.3 V MCU outputs. IC Role / Device Role / Timing Role: Low-side load switch controlled by MCU GPIO pin. Use Value: Enables full brightness control with minimal gate drive overhead due to 1.9 V typ VGS(th) and 5 Ω RDS(on). | Use Scenario: Extending digital I/O capability of resource-constrained MCUs in industrial sensor nodes. IC Role / Device Role / Timing Role: Discrete buffer/switch for driving higher-current peripherals (e.g., buzzers, relays). Use Value: Provides 0.2 A sink capability while maintaining logic-compatible turn-on with 3.3 V outputs. |
| Low-Power DC-DC Feedback | USB Port Power Control |
Use Scenario: Enabling/disabling feedback resistors in adjustable buck converter ICs to change output voltage dynamically. IC Role / Device Role / Timing Role: Precision analog switch in voltage-setting network. Use Value: Low leakage (IDSS ≤ 0.1 µA @ 60 V) ensures stable setpoint accuracy over temperature. | Use Scenario: Implementing USB 2.0 port power enable/disable per USB specification requirements. IC Role / Device Role / Timing Role: Controlled high-side or low-side power switch for VBUS line. Use Value: Rated dv/dt immunity prevents false triggering during hot-plug transients on USB lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS138W-7-F | RDS(on) = 3.5 Ω @ VGS = 10 V; lower VDS (50 V); higher Ciss (60 pF) | Not rated for 60 V systems; better suited for signal switching than power switching | Select when lower on-resistance at 10 V drive is prioritized over voltage headroom |
| DMN2004K-7 | RDS(on) = 2.7 Ω @ VGS = 4.5 V; higher ID (0.35 A); same SOT-23 package | Higher current handling supports more demanding loads but increases gate charge (Qg = 2.1 nC) | Select when >0.2 A continuous current or lower RDS(on) at 4.5 V is required |
Compared with BSS7728NL6327HTSA1, BSS138W-7-F offers lower RDS(on) at 10 V but sacrifices 60 V rating and dv/dt robustness; DMN2004K-7 delivers superior conduction performance at 4.5 V with higher thermal capacity, albeit at increased gate drive demand.
Availability
BSS7728NL6327HTSA1 is available at Aetrix Electronics and suitable for LED drivers, microcontroller I/O expansion, low-power DC-DC feedback networks, and USB port power control requiring stable component supply and consistent SOT-23 packaging.
Supply support for BSS7728NL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.
The BSS7728N belongs to Infineon's SIPMOS™ small-signal transistor family, designed for logic-compatible, low-power switching in space-constrained consumer and industrial applications.
FAQ
Is BSS7728NL6327HTSA1 suitable for 1.8 V microcontroller gate drive?
Yes. With a typical gate threshold voltage of 1.9 V and maximum of 2.3 V, it reliably turns on using 1.8 V logic outputs under light load conditions. However, RDS(on) rises significantly below VGS = 2.5 V, so full 0.2 A current capability requires ≥3.3 V drive.
What is the maximum safe operating voltage for continuous DC blocking?
The absolute maximum VDS is 60 V, but the recommended continuous operating voltage is ≤50 V to maintain margin against transients and temperature-induced drift. At Tj = 150 °C, V(BR)DSS degrades to ~54 V per characterization data.
Does this MOSFET require external gate resistor for ESD protection?
No external gate resistor is required solely for ESD protection-the device meets HBM Class 2 (≥2 kV) per JEDEC JESD22-A114. However, a 10–100 Ω series gate resistor is recommended to dampen ringing and reduce EMI in switching applications.
Can the body diode be used for reverse polarity protection?
No. The integrated body diode conducts from source to drain (anode at source), making it unsuitable for reverse polarity protection. For that function, a dedicated Schottky or PMOS-based solution is required to block reverse current flow.
BSS7728NL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 56 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS7728NL6327HTSA1 FAQ
1.How can I place an order for BSS7728NL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS7728NL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BSS7728NL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS7728NL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS7728NL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS7728NL6327HTSA1?
All BSS7728NL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS7728NL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS7728NL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS7728NL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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