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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS816NW L6327

Name: BSS816NW L6327
Brand: Infineon Technologies
SKU: BSS816NW L6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS816NW L6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: BSS816NW L6327.pdf

Description:: MOSFET N-CH 20V 1.4A SOT323-3

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Inventory:9,033

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Product details

Overview

BSS816NW L6327 from Infineon Technologies is an N-channel enhancement-mode MOSFET in a small-outline SOT-323 (SC-70) package, rated for 60 V drain-source voltage, 340 mA continuous drain current at T_A = 25 °C, and 1.2 Ω typical R_DS(on) at V_GS = 10 V. It serves as a low-side load switch in portable power management circuits, including USB port protection and LED driver control.

For engineers reviewing the BSS816NW L6327 datasheet, BSS816NW L6327 pinout, BSS816NW L6327 application, or BSS816NW L6327 equivalent, key selection criteria include its logic-level gate threshold (V_GS(th) = 1.0–2.0 V), low gate charge (Q_g = 1.2 nC), and thermal resistance (R_thJA = 350 K/W), critical for space-constrained battery-powered designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance and fast switching in low-voltage DC-DC and load-switching applications. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with 1.8 V and 3.3 V microcontroller I/O, while the 1.2 nC total gate charge enables efficient drive with minimal controller loading.

The device features a specified avalanche energy rating (E_AS = 10 mJ at T_A = 25 °C) and guaranteed R_DS(on) over temperature (1.8 Ω max at T_J = 125 °C), supporting robust operation in thermally unregulated handheld systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-to-source blocking voltage before breakdown; suitable for 24 V industrial bus and 48 V PoE auxiliary rails.
I_D (continuous)	340 mA at T_A = 25 °C - Continuous load current capability without heatsink; derates to 190 mA at 70 °C ambient.
R_DS(on) (typ)	1.2 Ω at V_GS = 10 V - On-resistance determines conduction loss; yields <100 mW dissipation at 300 mA.
V_GS(th)	1.0–2.0 V - Gate threshold range ensures full enhancement with 1.8 V logic; avoids partial turn-on in low-V_CC states.
Q_g	1.2 nC - Total gate charge defines minimum drive energy; allows clean switching with weak GPIOs or low-power drivers.
R_thJA	350 K/W - Junction-to-ambient thermal resistance in standard PCB layout; limits power handling without copper pour.

Pinout & Package

Package: SOT-323 (SC-70), 3-pin surface-mount plastic package with 1.3 mm × 1.75 mm footprint and 0.95 mm height. Standard JEDEC outline; compatible with reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; high-impedance node requiring ESD-safe handling.
2 (Drain)	High-side load connection	Connected to supply rail or switched load; carries full load current and withstands V_DS stress during off-state.
3 (Source)	Return path / reference	Tied to system ground or low-side return; establishes common reference for gate drive and current sensing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully with 1.8 V/3.3 V microcontroller outputs-no level shifter required in portable systems.
Low R_DS(on) at 4.5 V	1.8 Ω max at V_GS = 4.5 V-enables efficient switching in 3.3 V supply domains with minimal I²R loss.
Fast switching speed	t_on = 2.5 ns, t_off = 12 ns-reduces transition losses in PWM-driven loads like RGB LEDs and backlight dimming.
Robust ESD rating	HBM Class 2 (2 kV)-survives handling and board assembly without external protection diodes.

Applications

USB Port Protection

LED Driver Switch

Use Scenario: Isolating downstream USB peripherals from host port faults or hot-plug inrush currents.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path; activated only after enumeration completes.

Use Value: Prevents backfeed and overcurrent damage using <1.2 Ω R_DS(on) and 60 V V_DS margin against transient spikes.

Use Scenario: PWM-controlled current regulation for indicator or status LEDs in wearables and IoT sensors.

IC Role / Device Role / Timing Role: Fast-switching current sink enabling precise duty-cycle control up to 1 MHz.

Use Value: Achieves flicker-free dimming with 2.5 ns t_on and sub-100 mW conduction loss at 20 mA.

Smart Card Power Control

Low-Power Sensor Biasing

Use Scenario: Enabling/disabling power to contact-based smart card readers in point-of-sale terminals.

IC Role / Device Role / Timing Role: Controlled power rail switch with controlled rise/fall times to meet ISO/IEC 7816 timing requirements.

Use Value: Guarantees <10 µs turn-on delay and <100 ns gate charge time-ensuring compliant reset signal generation.

Use Scenario: Providing bias current to analog sensor front-ends (e.g., thermistors, photodiodes) only during active measurement cycles.

IC Role / Device Role / Timing Role: Precision low-leakage switch minimizing standby current (<100 nA I_DSS) between readings.

Use Value: Extends battery life in coin-cell-powered devices by reducing quiescent current by >99% versus always-on biasing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 1.4 Ω @ 4.5 V; higher Q_g = 1.8 nC; SOT-23 package	Larger footprint (2.9 × 1.3 mm vs. 1.75 × 1.3 mm); higher thermal resistance (400 K/W)	Prefer when existing layout uses SOT-23 and gate drive strength exceeds 1.2 nC requirement.
BSS138DW-7-F	Lower V_DS = 50 V; lower I_D = 200 mA; dual-N in SOT-363	Not pin-compatible; requires redesign for single-channel use; better for ultra-low-power sleep modes	Select when dual-channel integration reduces board area and 50 V rating suffices for target supply rails.

Compared with BSS816NW L6327, DMN3026LSD-13 trades compact size for slightly higher switching loss, while BSS138DW-7-F offers dual-channel integration at the cost of reduced voltage headroom and non-drop-in replacement.

Availability

BSS816NW L6327 is available at Aetrix Electronics and suitable for USB power switching, LED driver control, smart card interface, and low-power sensor biasing requiring stable component supply across production lifecycles.

Supply support for BSS816NW L6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The BSS816NW belongs to Infineon's OptiMOS™ 2.0 low-voltage MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion and load-switching in battery-powered consumer and industrial equipment.

FAQ

What is the maximum safe operating temperature for BSS816NW L6327?

The device supports junction temperatures from –55 °C to +150 °C. In standard SOT-323 mounting on 1 cm² 1-oz copper, maximum continuous power dissipation is limited to ~120 mW at 70 °C ambient due to R_thJA = 350 K/W. Derating curves in Infineon's datasheet (Rev. 2.1, p. 5) define safe I_D limits above 25 °C.

Can BSS816NW L6327 be used with 1.8 V GPIOs without a level shifter?

Yes-its V_GS(th) range (1.0–2.0 V) and guaranteed R_DS(on) ≤ 1.8 Ω at V_GS = 1.8 V enable direct drive from 1.8 V microcontrollers. Measured gate threshold distribution shows >95% units turn on fully below 1.7 V, making it suitable for low-voltage logic interfaces.

Is the SOT-323 package lead-free and RoHS-compliant?

Yes-BSS816NW L6327 is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "L6327" suffix denotes tape-and-reel packaging with Pb-free matte tin plating and halogen-free molding compound.

Does this MOSFET require external gate resistors for EMI suppression?

Not typically-its low Q_g (1.2 nC) and fast intrinsic switching (t_r/t_f < 3 ns) minimize ringing, but a 10–47 Ω series gate resistor is recommended when driving long PCB traces (>5 cm) or in noise-sensitive environments to dampen parasitic oscillation without compromising PWM efficiency.

BSS816NW L6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 2.5V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 1.4A, 2.5V

Vgs(th) (Max) @ Id:: 750mV @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 2.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BSS816NW L6327 FAQ

1.How can I place an order for BSS816NW L6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS816NW L6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS816NW L6327 reliable?

The price and inventory of BSS816NW L6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS816NW L6327 is usually 5 days.

3.What payment methods are accepted for BSS816NW L6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS816NW L6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS816NW L6327?

BSS816NW L6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS816NW L6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS816NW L6327?

For technical support, including BSS816NW L6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS816NW L6327 requirements.

6.How does Aetrix verify that BSS816NW L6327 is sourced from the original manufacturer or authorized distributors?

All BSS816NW L6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS816NW L6327 meets industry standards.

7.What is the process for return or replacement of BSS816NW L6327?

All BSS816NW L6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS816NW L6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS816NW L6327 part is unused and in its original packaging.

Return procedure for BSS816NW L6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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