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Infineon Technologies BSS83PE6327
- Part No.:
- BSS83PE6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS83PE6327.pdf
- Description:
- MOSFET P-CH 60V 330MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,250
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Product details
Overview
BSS83PE6327 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET with -60 V drain-source breakdown voltage, 2 Ω RDS(on) at VGS = -4.5 V and ID = -0.27 A, and logic-level gate drive compatibility. It serves as a low-side load switch in space-constrained power management circuits for portable instrumentation and industrial sensor interfaces.
For engineers reviewing the BSS83PE6327 datasheet, BSS83PE6327 pinout, BSS83PE6327 application, or BSS83PE6327 equivalent, key selection criteria include avalanche rating (9.5 mJ), dv/dt immunity (6 kV/µs), reverse diode recovery performance (trr = 59.4–89 ns), and SOT-23 package thermal resistance (RthJA = 300–350 K/W).
Technical Context
This device operates in enhancement mode with a gate threshold voltage of -1.0 to -2.0 V, enabling direct interface with 3.3 V and 5 V logic controllers without level shifting. Its avalanche-rated construction supports unclamped inductive switching in relay drivers and solenoid controls.
The integrated body diode exhibits VSD = -0.84 to -1.1 V at IF = -0.33 A and trr ≤ 89 ns, making it suitable for synchronous rectification in low-power DC-DC converters where reverse recovery loss must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Supports operation across 24 V industrial rails with margin against transients |
| RDS(on) | 2 Ω @ VGS = -4.5 V - Enables <100 mW conduction loss at 0.27 A load current |
| ID | -0.33 A continuous - Rated for low-power switching in battery-powered sensors and IoT nodes |
| EAS | 9.5 mJ - Withstands single-pulse inductive energy without failure in relay coil snubbing |
| tr/tf | 71/61 ns - Fast switching reduces transition losses in 100–500 kHz PWM applications |
| Ciss | 62–78 pF - Low input capacitance minimizes gate drive current demand from microcontrollers |
| VGS(th) | -1.0 to -2.0 V - Ensures reliable turn-on with standard 3.3 V GPIO outputs |
Pinout & Package
Supplied in PG-SOT-23 (JEDEC TO-236AB) package with standardized 3-pin configuration and 3000 pcs/reel tape-and-reel format. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Logic-level control input; requires no external level shifter for 3.3 V MCU drive |
| Pin 2 (S) | Source | Reference node for gate drive; tied to system ground in low-side switch configuration |
| Pin 3 (D) | Drain | Switched high-voltage output node; thermally connected to PCB copper for heat dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche rated | 9.5 mJ single-pulse energy handling enables robustness in inductive load switching |
| dv/dt rated | 6 kV/µs immunity prevents false turn-on during fast voltage transients on drain line |
| Logic-level gate | VGS(th) ≤ -2.0 V ensures full enhancement with 3.3 V microcontroller outputs |
| Enhancement mode | Normally-off behavior eliminates need for pull-down resistors in standby state |
| SIPMOS™ technology | Optimized for low RDS(on) and fast switching in compact SOT-23 footprint |
Applications
| Industrial Sensor Interface | Portable Instrumentation Power Switch |
|---|---|
Use Scenario: Isolating analog front-end circuitry from shared supply rail during calibration cycles. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery to precision ADC reference buffers. Use Value: RDS(on) = 2 Ω limits voltage drop to <0.54 V at 0.27 A, preserving reference accuracy. | Use Scenario: Enabling/disabling display backlight and peripheral sensors in handheld multimeters. IC Role / Device Role / Timing Role: Logic-controlled power gate between Li-ion battery and 3.3 V LDO input. Use Value: Avalanche rating protects against inductive kickback from OLED driver ICs during rapid shutdown. |
| Relay Driver Circuit | Low-Power DC-DC Synchronous Rectifier |
Use Scenario: Driving 12 V/100 mA signal relays in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Snubberless low-side switch absorbing relay coil energy via controlled avalanche. Use Value: EAS = 9.5 mJ exceeds typical 12 V relay coil energy (~5 mJ), eliminating external TVS. | Use Scenario: Replacing Schottky diode in 3.3 V output buck converter for medical wearable devices. IC Role / Device Role / Timing Role: Synchronous rectifier with body diode conducting during dead-time. Use Value: trr ≤ 89 ns and Qrr ≤ 56 nC minimize reverse recovery loss and EMI generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 1.8 Ω @ VGS = -4.5 V; lower VDS (-20 V); smaller WDFN package | Not suitable for 24 V systems due to lower breakdown rating | Select when board space is critical and voltage stress remains below 15 V |
| SI2301DS-T1-BE3 | RDS(on) = 110 mΩ @ VGS = -4.5 V; higher ID (-2.7 A); same SOT-23 package | Higher conduction loss at low current due to different channel optimization | Prefer for higher-current loads (>0.5 A) where thermal design allows |
Compared with DMN2020LFG-7 and SI2301DS-T1-BE3, the BSS83PE6327 uniquely balances -60 V ruggedness, logic-level drive, and SOT-23 thermal performance-making it optimal for 24 V industrial edge nodes where both voltage margin and MCU compatibility are essential.
Availability
BSS83PE6327 is available at Aetrix Electronics and suitable for industrial sensor interfaces, portable instrumentation power switches, relay driver circuits, and low-power DC-DC synchronous rectifiers requiring stable component supply and long-term lifecycle support.
Supply support for BSS83PE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The BSS83PE6327 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for high reliability and logic-level drivability in space-constrained industrial and instrumentation applications.
FAQ
Is BSS83PE6327 suitable for hot-swap applications?
No. While avalanche-rated and dv/dt immune, it lacks integrated current limiting, thermal shutdown, or soft-start features required for safe hot-swap insertion. Use dedicated hot-swap controllers like Infineon TDA38021 for such applications.
What is the maximum allowable gate-source voltage?
The absolute maximum VGS is ±20 V per datasheet. Operation beyond ±12 V risks gate oxide damage. For robust 3.3 V logic interfacing, a 10 kΩ series resistor is recommended to limit transient current during ESD events.
Can BSS83PE6327 replace BSS84 in existing designs?
Yes, with verification. Both are P-channel SOT-23 MOSFETs, but BSS83PE6327 offers lower RDS(on) (2 Ω vs. 10 Ω), higher VDS (-60 V vs. -50 V), and improved avalanche rating-potentially improving efficiency and ruggedness in legacy BSS84 layouts.
Does the body diode support bidirectional current flow?
No. The intrinsic body diode conducts only from source to drain (anode at source, cathode at drain). It cannot block reverse current or function as a high-side switch; use external diodes or complementary N-channel devices for bidirectional control.
BSS83PE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 330mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 78 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS83PE6327 FAQ
1.How can I place an order for BSS83PE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS83PE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS83PE6327 reliable?
The price and inventory of BSS83PE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS83PE6327 is usually 5 days.
3.What payment methods are accepted for BSS83PE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS83PE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS83PE6327?
BSS83PE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS83PE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS83PE6327?
For technical support, including BSS83PE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS83PE6327 requirements.
6.How does Aetrix verify that BSS83PE6327 is sourced from the original manufacturer or authorized distributors?
All BSS83PE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS83PE6327 meets industry standards.
7.What is the process for return or replacement of BSS83PE6327?
All BSS83PE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS83PE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS83PE6327 part is unused and in its original packaging.
Return procedure for BSS83PE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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