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Infineon Technologies BSS83PL6327HTSA1
- Part No.:
- BSS83PL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BSS83PL6327HTSA1.pdf
- Description:
- MOSFET P-CH 60V 330MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,850
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Product details
Overview
BSS83PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET rated for −60 V drain-source voltage, 2 Ω RDS(on) at −4.5 V VGS, and −0.33 A continuous drain current. It features logic-level gate drive, avalanche ruggedness, and dv/dt immunity-designed for low-power load switching in space-constrained consumer and industrial control circuits.
For engineers reviewing the BSS83PL6327HTSA1 datasheet, BSS83PL6327HTSA1 pinout, BSS83PL6327HTSA1 application, or BSS83PL6327HTSA1 equivalent, key selection criteria include its −60 V VDS, 2 Ω on-resistance at −4.5 V, SOT-23 package footprint, avalanche energy rating (9.5 mJ), and −1.5 V typical gate threshold voltage.
Technical Context
This device operates as a single N-channel depletion-mode MOSFET in reverse configuration-functionally a P-channel enhancement-mode switch with integrated body diode. Its gate threshold voltage (−1.5 V typ) enables direct interfacing with 3.3 V and 5 V logic without level shifting.
Designed for unidirectional DC load control, it supports pulsed currents up to −1.32 A and withstands repetitive avalanche events under controlled conditions (RGS = 25 Ω). The 62 pF input capacitance and 7 ns turn-on delay support moderate-speed switching in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −60 V - maximum blocking voltage before breakdown; defines safe operating range in high-side or low-side switch configurations |
| RDS(on) @ VGS = −4.5 V | 2 Ω - on-resistance determining conduction loss at logic-level drive; enables <150 mW I²R loss at −0.33 A |
| ID (continuous) | −0.33 A @ TA = 25 °C - usable current limit for PCB-mounted operation without heatsink |
| EAS | 9.5 mJ - single-pulse avalanche energy rating; allows robust handling of inductive kickback in relay or solenoid drivers |
| Ciss | 62 pF - input capacitance affecting gate drive strength requirements and switching speed |
| VGS(th) | −1.5 V (typ) - gate threshold enabling reliable turn-on with standard 3.3 V microcontroller outputs |
| td(on) | 23 ns - turn-on delay time at −4.5 V drive and −0.27 A load; supports >1 MHz switching in optimized layouts |
Pinout & Package
Supplied in PG-SOT-23 (JEDEC TO-236AB) package with standard 3-pin lead frame and surface-mount footprint. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires −4.5 V or lower for full enhancement; logic-compatible with 3.3 V/5 V CMOS outputs |
| Pin 2 (S) | Source | Reference node for gate drive; connected to system ground or positive rail depending on high-/low-side topology |
| Pin 3 (D) | Drain | Power output terminal; carries switched load current and hosts integrated body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at −4.5 V VGS, eliminating need for external level shifters in 3.3 V systems |
| Avalanche-rated | Guaranteed 9.5 mJ single-pulse energy absorption protects against inductive transients in relay/solenoid loads |
| dv/dt rated | Withstands 6 kV/µs voltage slew rate without false triggering-critical for noisy industrial environments |
| Enhancement mode | Normally off behavior ensures fail-safe operation during power-up or MCU reset sequences |
Applications
| LED Power Sequencing | USB Port Power Switching |
|---|---|
Use Scenario: Controlled ramp-up of LED strings in portable lighting to prevent inrush current and thermal stress. IC Role / Device Role / Timing Role: Low-side load switch enabling precise ON/OFF timing via microcontroller GPIO. Use Value: 2 Ω RDS(on) limits conduction loss to <220 mW at 330 mA, supporting thermally constrained PCB layouts. | Use Scenario: Isolating USB VBUS from host controller during hot-plug detection or fault conditions. IC Role / Device Role / Timing Role: High-side power switch with fast turn-off (<76 ns fall time) to meet USB 2.0 disconnect timing specs. Use Value: −60 V VDS provides margin against voltage spikes on shared bus lines; −1.5 V VGS(th) ensures compatibility with 3.3 V USB controller I/O. |
| Low-Power Sensor Biasing | Industrial I/O Protection |
Use Scenario: Enabling/disabling bias voltage to analog sensors during sleep cycles to reduce system standby current. IC Role / Device Role / Timing Role: Always-off switch activated only during active measurement windows. Use Value: −100 nA IDSS at 125 °C ensures sub-1 µA leakage across temperature, preserving battery life in IoT nodes. | Use Scenario: Protecting programmable logic controller (PLC) digital inputs from field-wiring faults and ESD events. IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed upstream of input conditioning circuitry. Use Value: Integrated body diode with −0.84 V forward drop provides bidirectional clamping; avalanche rating handles surge currents per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LFG-7 | RDS(on) = 1.8 Ω @ −4.5 V; slightly lower threshold (−1.2 V typ); same SOT-23 package | Marginally better conduction loss but reduced avalanche energy (no published EAS) | Prefer when minimizing I²R loss is critical and inductive energy is managed externally |
| SI2301BDS-T1-E3 | RDS(on) = 2.4 Ω @ −4.5 V; higher VGS(th) (−2.0 V typ); no dv/dt rating specified | Lacks dv/dt immunity and avalanche qualification-less suitable for noisy industrial wiring | Select only for benign, low-noise environments where cost is primary constraint |
Compared with DMN2041LFG-7 and SI2301BDS-T1-E3, BSS83PL6327HTSA1 uniquely combines −60 V rating, 9.5 mJ avalanche capability, and 6 kV/µs dv/dt immunity in a logic-level SOT-23 package-making it optimal for safety-critical or electrically harsh applications where transient robustness is non-negotiable.
Availability
BSS83PL6327HTSA1 is available at Aetrix Electronics and suitable for LED power sequencing, USB port power switching, and low-power sensor biasing requiring stable component supply and long-term production continuity.
Supply support for BSS83PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The BSS83P belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered specifically for reliable, low-voltage logic-driven switching in compact, cost-sensitive applications such as portable electronics and industrial I/O modules.
FAQ
Is BSS83PL6327HTSA1 suitable for high-side switching?
Yes-it supports high-side configuration with source tied to VCC and gate driven below source potential. Its −60 V VDS and −1.5 V VGS(th) allow direct use with 3.3 V or 5 V controllers when paired with appropriate gate pull-down or level-shifting circuitry.
What is the maximum junction temperature during continuous operation?
The absolute maximum junction temperature is +150 °C. At TA = 25 °C, continuous power dissipation is limited to 0.36 W. Derating follows the curve on page 5 of the datasheet: at 70 °C ambient, max ID drops to −0.27 A due to thermal constraints.
Does this MOSFET require a gate resistor for stability?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and control switching speed. The datasheet specifies timing parameters (e.g., td(on), tr) with RG = 43 Ω, confirming its use in standard test conditions for predictable performance.
Can BSS83PL6327HTSA1 replace BSS84 in existing designs?
Yes-with caution. Both are P-channel SOT-23 MOSFETs, but BSS83P offers lower RDS(on) (2 Ω vs. 10 Ω for BSS84), higher VDS (−60 V vs. −50 V), and avalanche rating. Verify layout thermal margins and gate drive strength, as faster switching may increase EMI.
BSS83PL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 330mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 78 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BSS83PL6327HTSA1 FAQ
1.How can I place an order for BSS83PL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS83PL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS83PL6327HTSA1 reliable?
The price and inventory of BSS83PL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS83PL6327HTSA1 is usually 5 days.
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4.How is shipping managed for BSS83PL6327HTSA1?
BSS83PL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS83PL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS83PL6327HTSA1?
For technical support, including BSS83PL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS83PL6327HTSA1 requirements.
6.How does Aetrix verify that BSS83PL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSS83PL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS83PL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSS83PL6327HTSA1?
All BSS83PL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS83PL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS83PL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSS83PL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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