Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS84P-E6327

Name: BSS84P-E6327
Brand: Infineon Technologies
SKU: BSS84P-E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSS84P-E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS84P-E6327.pdf

Description:: MOSFET P-CH 60V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,587

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSS84P-E6327 from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET rated for -60 V drain-source voltage, 8 Ω R_DS(on) at V_GS = -4.5 V and I_D = -0.14 A, and -0.17 A continuous drain current at 25 °C. It features avalanche rating, dv/dt ruggedness, and AEC-Q101 qualification-commonly used in low-power load switching and level-shifting circuits in automotive body electronics.

For engineers reviewing the BSS84P-E6327 datasheet, BSS84P-E6327 pinout, BSS84P-E6327 application, or BSS84P-E6327 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.0 V), SOT-23 package thermal resistance (R_thJA = 350 K/W), and reverse diode forward voltage (V_SD = -0.93 to -1.24 V at -0.17 A).

Technical Context

This device operates as a normally-off P-channel switch with gate threshold voltage tightly specified between -1.0 V and -2.0 V, enabling direct interface with 3.3 V and 5 V logic controllers without external level translation. Its R_DS(on) remains stable across temperature (8–12 Ω at -4.5 V, up to 150 °C junction), and it supports repetitive avalanche energy up to 0.036 mJ under periodic stress conditions.

The integrated body diode exhibits fast reverse recovery (t_rr = 23–34 ns) and low Q_rr (10–15 nC), making it suitable for flyback and synchronous rectification topologies where diode conduction occurs during dead time. Dynamic parameters-including C_iss = 15–19 pF, C_oss = 6–8 pF, and Q_g = 1.0–1.5 nC-support efficient high-frequency switching below 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	-60 V - Withstands reverse-biased drain-source voltage up to -60 V before breakdown, supporting 48 V automotive rail protection.
R_DS(on) @ V_GS = -4.5 V	8–12 Ω - Enables ~0.14 A load current with <0.2 V drop at logic-level gate drive, minimizing conduction loss in space-constrained PCBs.
I_D continuous @ 25 °C	-0.17 A - Rated for sustained current in low-power signal routing, LED biasing, and power sequencing control paths.
V_GS(th)	-1.0 to -2.0 V - Ensures reliable turn-on with standard 3.3 V microcontroller GPIOs, eliminating need for gate driver ICs.
t_rr / Q_rr	23–34 ns / 10–15 nC - Reduces switching losses and EMI in bidirectional current paths, such as half-bridge bootstrap diode replacement.
P_tot @ 25 °C	0.36 W - Limits thermal rise on standard FR4 PCBs with minimal copper area; derates linearly above 25 °C ambient.
Avalanche energy EAS	2.6 mJ (single pulse) - Absorbs inductive kickback from relays or solenoids without failure, enhancing system robustness.

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with exposed drain pad (Pin 3) for thermal conduction. Marking: "YBs". Tape-and-reel packaging: 3000 pcs per reel (H6327).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level negative voltage to enable channel conduction; high-impedance input (I_GSS ≤ -100 nA).
Pin 2	Source	Reference node for gate drive; tied to higher potential (e.g., 12 V rail); carries full load current in high-side switch configuration.
Pin 3	Drain	Output terminal; connected to load ground or return path; thermally coupled to PCB copper for heat dissipation (R_thJS = 200 K/W).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including interior lighting, sensor power gating, and LIN bus interface protection.
Logic-level gate drive	V_GS(th) range (-1.0 to -2.0 V) ensures full enhancement with 3.3 V/5 V MCU outputs-no external level shifter required.
Avalanche-rated	Withstands single-pulse EAS = 2.6 mJ and periodic EAR = 0.036 mJ, protecting against inductive switching transients.
dv/dt ruggedness	Rated for -6 kV/µs, preventing false turn-on during fast voltage transients in noisy automotive environments.
Halogen-free construction	Complies with IEC61249-2-21, supporting RoHS-compliant and environmentally regulated manufacturing.

Applications

Automotive Interior Lighting Control

Low-Voltage Power Sequencing

Use Scenario: Switching 12 V LED strips in door modules and map lights using microcontroller GPIOs.

IC Role / Device Role / Timing Role: High-side load switch controlling current flow from battery to LED anode; enables PWM dimming via gate modulation.

Use Value: Low R_DS(on) minimizes voltage drop (<0.2 V at 140 mA), preserving LED brightness and reducing thermal load on compact PCBs.

Use Scenario: Enabling/disabling auxiliary rails (e.g., 3.3 V sensor supply) after main system power-up.

IC Role / Device Role / Timing Role: Controlled power gate placed between regulator output and downstream circuitry; driven by reset controller or sequencer.

Use Value: Fast turn-on/off (t_d(on) ≈ 6.7 ns, t_f ≈ 20.5 ns) ensures precise timing alignment with power-good signals.

Level-Shifting Interface

Reverse Polarity Protection

Use Scenario: Translating 3.3 V logic signals to control 5 V or 12 V peripherals in mixed-voltage systems.

IC Role / Device Role / Timing Role: Voltage-level translator using source-follower or common-drain configuration to shift signal reference.

Use Value: Tight V_GS(th) distribution ensures consistent switching threshold across temperature, improving signal integrity.

Use Scenario: Protecting downstream circuitry from accidental reverse battery connection in infotainment head units.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail; conducts only when polarity is correct.

Use Value: Integrated body diode blocks reverse current while R_DS(on) < 12 Ω limits forward voltage drop to <0.25 V at rated current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 45 mΩ @ -4.5 V (lower), but V_DS = -20 V (reduced voltage rating)	Suitable for 3.3 V/5 V systems only; not recommended for 12 V+ automotive rails due to lower breakdown margin	Select when ultra-low R_DS(on) is critical and operating voltage stays ≤ 12 V.
SI2301DS-T1-E3	V_GS(th) = -0.4 to -1.0 V (wider spread), R_DS(on) = 115 mΩ @ -4.5 V (higher), no AEC-Q101 qualification	Limited to industrial/commercial use; less predictable turn-on behavior in safety-critical automotive contexts	Choose for cost-sensitive non-automotive designs where qualification and tight threshold are not required.

Compared with DMG2305UVT-7 and SI2301DS-T1-E3, the BSS84P-E6327 offers superior voltage rating (-60 V), automotive qualification, and tighter V_GS(th) tolerance-making it optimal for 12 V/24 V automotive subsystems requiring reliability and design margin.

Availability

BSS84P-E6327 is available at Aetrix Electronics and suitable for automotive interior lighting control, low-voltage power sequencing, and reverse polarity protection requiring stable component supply and long-term lifecycle support.

Supply support for BSS84P-E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions.

The BSS84P-E6327 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for high-reliability, logic-compatible switching in automotive and industrial power interfaces.

FAQ

Is BSS84P-E6327 suitable for high-side switching in 12 V automotive systems?

Yes. With -60 V V_DS rating, AEC-Q101 qualification, and logic-level V_GS(th), it reliably switches 12 V loads using standard MCU GPIOs. Its R_DS(on) of 8–12 Ω at -4.5 V ensures <0.2 V drop at 170 mA, minimizing self-heating on standard PCB layouts.

What is the maximum safe operating temperature for continuous operation?

The device supports junction temperatures from -55 °C to +150 °C. At 70 °C ambient, its continuous drain current derates to -0.14 A. Thermal design must account for R_thJA = 350 K/W on minimal copper; adding 6 cm² cooling area reduces this to 300 K/W.

Does BSS84P-E6327 include an integrated body diode, and what are its characteristics?

Yes-it features a monolithic parasitic body diode with V_SD = -0.93 to -1.24 V at -0.17 A and reverse recovery time t_rr = 23–34 ns. This diode supports freewheeling in inductive loads and enables reverse polarity protection without external components.

Can BSS84P-E6327 replace older BSS84 variants in existing designs?

Yes, with verification of marking and tape code. The BSS84P-E6327 supersedes earlier BSS84 versions with improved avalanche rating, tighter V_GS(th), and AEC-Q101 compliance. Pinout and package are identical to legacy SOT-23 versions, ensuring mechanical and electrical drop-in compatibility.

BSS84P-E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS84P-E6327 FAQ

1.How can I place an order for BSS84P-E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84P-E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84P-E6327 reliable?

The price and inventory of BSS84P-E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84P-E6327 is usually 5 days.

3.What payment methods are accepted for BSS84P-E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84P-E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84P-E6327?

BSS84P-E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84P-E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84P-E6327?

For technical support, including BSS84P-E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84P-E6327 requirements.

6.How does Aetrix verify that BSS84P-E6327 is sourced from the original manufacturer or authorized distributors?

All BSS84P-E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84P-E6327 meets industry standards.

7.What is the process for return or replacement of BSS84P-E6327?

All BSS84P-E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84P-E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84P-E6327 part is unused and in its original packaging.

Return procedure for BSS84P-E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.