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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS84P E6433

Name: BSS84P E6433
Brand: Infineon Technologies
SKU: BSS84P E6433
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS84P E6433

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS84P E6433.pdf

Description:: MOSFET P-CH 60V 170MA SOT23-3

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Product details

Overview

BSS84P E6433 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in PG-SOT-23 package, rated for -60 V V_DS, 8 Ω R_DS(on) at V_GS = -4.5 V, and -0.17 A continuous drain current; used in low-power load switching, level-shifting circuits, and reverse-polarity protection in portable electronics.

For engineers reviewing the BSS84P E6433 datasheet, BSS84P E6433 pinout, BSS84P E6433 application, or BSS84P E6433 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -1.5 V typ), avalanche energy rating (E_AS = 2.6 mJ), thermal resistance (R_thJA = 300 K/W on 6 cm² PCB), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET operates as a normally-off P-channel switch requiring negative gate-source voltage for conduction. Its logic-level threshold (V_GS(th) = -1 to -2 V) enables direct interface with 3.3 V or 5 V microcontroller outputs without level-shifting circuitry.

Designed with SIPMOS™ technology, it features robust avalanche capability (E_AS = 2.6 mJ), dv/dt immunity (-6 kV/µs), and halogen-free construction compliant with IEC61249-2-21 - supporting high-reliability, space-constrained applications where transient resilience and RoHS compliance are mandatory.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V: Maximum drain-to-source blocking voltage; supports 48 V rail protection and industrial input stage isolation.
R_DS(on)	8 Ω @ V_GS = -4.5 V: Enables <1.5 mW conduction loss at -0.14 A, suitable for battery-powered signal-path switching.
I_D (cont)	-0.17 A @ T_A = 25°C: Continuous current rating defines safe operation in low-current bias and enable circuits.
V_GS(th)	-1.5 V typ: Ensures turn-on with standard 3.3 V GPIO; avoids need for external gate drivers in MCU-peripheral interfaces.
E_AS	2.6 mJ: Single-pulse avalanche energy rating allows reliable operation under inductive switching stress without snubbers.
C_iss	15 pF typ: Low input capacitance minimizes gate drive power and speeds up switching in low-duty-cycle control paths.
P_tot	0.36 W @ T_A = 25°C: Power dissipation limit sets thermal design boundary for SOT-23 footprint on FR4 PCBs.

Pinout & Package

Package: PG-SOT-23 (JEDEC TO-236AB), surface-mount, 3-pin plastic case with exposed drain pad (Pin 3) for thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; accepts logic-level negative voltage to modulate channel conductivity; sensitive to ESD (IGSS ≤ -100 nA).
Pin 2	Source (S)	Reference node for gate drive; connected to higher potential in P-channel configuration; carries full load current.
Pin 3	Drain (D)	Power output node; electrically tied to PCB copper pour for thermal management; junction-to-soldering-point R_thJS = 200 K/W.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including body control modules and sensor interfaces per stress test requirements.
Logic-level gate drive	V_GS(th) range (-1 to -2 V) ensures full enhancement with 3.3 V or 5 V controllers - eliminates level shifters.
Avalanche-rated	Rated for repetitive and single-pulse avalanche events (E_AS = 2.6 mJ); enables robustness in inductive load switching.
Halogen-free	Complies with IEC61249-2-21; supports green manufacturing and end-of-life recycling mandates.
dv/dt immune	Rated -6 kV/µs; suppresses false triggering during fast transients in noisy automotive or industrial environments.

Applications

Reverse Polarity Protection

Load Switching

Use Scenario: Protecting USB-C peripherals and battery-powered sensors from incorrect DC jack insertion.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement in series with input rail.

Use Value: Eliminates 0.3–0.7 V forward drop of Schottky diodes, preserving >98% of supply voltage at -0.17 A load.

Use Scenario: Enabling/disabling power to RF front-end modules or display backlight drivers in wearables.

IC Role / Device Role / Timing Role: Low-quiescent current load switch controlled by MCU GPIO.

Use Value: Achieves <1 µA off-state leakage (IDSS ≤ -0.1 µA), extending battery life in sleep mode.

Level-Shifting Interface

Signal Inversion

Use Scenario: Translating 3.3 V logic signals to -5 V domains in mixed-voltage analog front-ends.

IC Role / Device Role / Timing Role: Active pull-down switch in open-drain configuration with external pull-up.

Use Value: Delivers <10 ns rise/fall times (tr = 16.2 ns, tf = 20.5 ns) enabling clean 10 MHz digital signal translation.

Use Scenario: Generating inverted enable signals for dual-rail power sequencers in FPGA carrier boards.

IC Role / Device Role / Timing Role: Digital inverter stage using source-follower or common-source topology.

Use Value: Provides predictable V_GS(th)-based switching threshold with ±20 V V_GS rating for rail-to-rail swing tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LKQ-7	R_DS(on) = 4.5 Ω @ -4.5 V (lower), but V_DS = -20 V (reduced voltage headroom)	Better for 12 V systems; unsuitable for 48 V input protection due to lower breakdown rating	Select when lower on-resistance is critical and system voltage ≤ 15 V.
SI2301CDS-T1-GE3	V_GS(th) = -0.7 V min (more sensitive), R_DS(on) = 11 Ω @ -4.5 V (higher), AEC-Q101 not claimed	Higher gate leakage (IGSS ≤ -250 nA) and no automotive qualification limit use in safety-critical modules	Acceptable for cost-sensitive consumer designs where qualification and precision threshold are non-essential.

Compared with DMN2053LKQ-7 and SI2301CDS-T1-GE3, BSS84P E6433 uniquely balances -60 V ruggedness, AEC-Q101 compliance, and logic-level drive in SOT-23 - making it optimal for automotive and industrial 24–48 V subsystems requiring certified reliability and minimal board area.

Availability

BSS84P E6433 is available at Aetrix Electronics and suitable for reverse polarity protection, load switching, level-shifting interfaces, and signal inversion requiring stable component supply across automotive, industrial IoT, and portable medical device programs.

Supply support for BSS84P E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The BSS84P belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for high reliability, low gate charge, and robust transient performance in space-constrained, mission-critical control paths.

FAQ

What is the maximum gate-source voltage rating for BSS84P E6433?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. Designers must ensure gate drive circuits clamp V_GS within this range - especially during hot-plug or ESD events - and account for ringing in high-speed switching layouts.

Does BSS84P E6433 require a gate resistor in typical switching applications?

A gate resistor (typically 10–100 Ω) is recommended to dampen gate oscillation and limit peak current during fast transitions. While not strictly required for DC on/off control, it prevents unintended turn-on from capacitive coupling and improves EMI behavior in PCB traces longer than 2 cm.

Can BSS84P E6433 be used in linear (analog) operation?

No - it is optimized for switching operation only. The device lacks guaranteed Safe Operating Area (SOA) data for linear mode, and its R_DS(on) variation with temperature (±20% over -55°C to +150°C) makes precise analog gain or regulation impractical and thermally unstable.

Is the drain pin (Pin 3) internally connected to the package heat slug?

Yes - Pin 3 is the drain terminal and is electrically and thermally connected to the exposed copper pad on the bottom of the PG-SOT-23 package. This pad must be soldered to a ≥6 cm² PCB copper area to achieve the specified R_thJA = 300 K/W and prevent thermal runaway at rated current.

BSS84P E6433 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS84P E6433 FAQ

1.How can I place an order for BSS84P E6433 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84P E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84P E6433 reliable?

The price and inventory of BSS84P E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84P E6433 is usually 5 days.

3.What payment methods are accepted for BSS84P E6433?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84P E6433 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84P E6433?

BSS84P E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84P E6433 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84P E6433?

For technical support, including BSS84P E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84P E6433 requirements.

6.How does Aetrix verify that BSS84P E6433 is sourced from the original manufacturer or authorized distributors?

All BSS84P E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84P E6433 meets industry standards.

7.What is the process for return or replacement of BSS84P E6433?

All BSS84P E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84P E6433, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84P E6433 part is unused and in its original packaging.

Return procedure for BSS84P E6433:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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