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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS84PW

Name: BSS84PW
Brand: Infineon Technologies
SKU: BSS84PW
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS84PW

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: BSS84PW.pdf

Description:: MOSFET P-CH 60V 150MA SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS84PW from Infineon Technologies is a P-channel enhancement-mode SIPMOS® small-signal MOSFET with −60 V drain-source voltage, 8 Ω R_DS(on) at V_GS = −10 V and I_D = −0.15 A, −0.15 A continuous drain current, and logic-level gate drive compatibility (V_GS(th) = −1 to −2 V). It is avalanche-rated, dv/dt-rated, and qualified per AEC-Q101 for automotive signal switching in low-power load control circuits.

For engineers reviewing the BSS84PW datasheet, BSS84PW pinout, BSS84PW application, or BSS84PW equivalent, key selection criteria include its −60 V V_DS, low gate threshold (−1.5 V typ), 0.3 W power dissipation at 25 °C, SOT-323 package footprint, and robust 2.61 mJ single-pulse avalanche energy rating.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate bias relative to source. Its logic-level threshold enables direct interface with 3.3 V and 5 V microcontroller GPIOs without level-shifting. The integrated body diode supports reverse-current paths in bidirectional signal routing or protection circuits.

Thermal design relies on its 110 K/W junction-to-soldering-point thermal resistance and 350–420 K/W junction-to-ambient (depending on PCB copper area), with safe operating area defined up to −60 V and −0.15 A under DC conditions. Avalanche ruggedness is validated per single-pulse EAS testing at −25 V and −0.15 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−60 V - Maximum blocking voltage before breakdown; defines upper limit for high-side switch or level-shifted load applications.
R_DS(on)	8 Ω max at V_GS = −10 V, I_D = −0.15 A - Determines conduction loss and self-heating in steady-state switching.
I_D (cont)	−0.15 A at T_A = 25 °C - Continuous current capability constrained by 0.3 W power dissipation and thermal layout.
V_GS(th)	−1.5 V typ - Ensures reliable turn-on with standard logic-level outputs; avoids marginal switching near 0 V.
E_AS	2.61 mJ - Quantifies single-pulse avalanche energy handling; critical for inductive load switching reliability.
C_iss	15.3 pF typ at V_GS = 0 V, V_DS = −25 V - Influences gate drive strength requirements and switching speed.
Q_g	1.5 nC max - Total gate charge defining driver current demand during turn-on/turn-off transitions.

Pinout & Package

Package: PG-SOT-323 (SMD, 3-pin, 1.3 mm × 1.7 mm footprint), marked "YBs", supplied in tape-and-reel (3000 pcs/reel).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; accepts negative V_GS to induce P-channel conduction; sensitive to ESD (±20 V max).
Pin 2	Source (S)	Reference node for gate drive; connected to higher potential in high-side configurations; carries full load current.
Pin 3	Drain (D)	Switched output node; connects to load; thermally coupled to PCB via solder pad (R_thJS = 110 K/W).

Key Features

Feature	Design Value
Avalanche-rated	2.61 mJ single-pulse E_AS ensures robustness against inductive kickback without external snubbers.
Logic-level gate	V_GS(th) = −1.5 V typ enables direct drive from 3.3 V/5 V MCUs without gate drivers.
dv/dt rated	6 kV/μs rating prevents false turn-on during fast voltage transients in noisy environments.
AEC-Q101 qualified	Validated for automotive applications including body electronics, sensor interfaces, and lighting control modules.
Halogen-free	Complies with IEC61249-2-21, supporting RoHS-compliant and environmentally regulated designs.

Applications

Automotive LED Tail Light Control

USB Port Power Switching

Use Scenario: Switching 12 V tail light loads in vehicle body control modules with PWM dimming.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling current path to LED strings.

Use Value: −60 V V_DS margin accommodates load dump transients; 2.61 mJ E_AS handles inductive relay coil energy.

Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices in portable docking stations.

IC Role / Device Role / Timing Role: Low-quiescent, logic-level-controlled power switch for hot-plug isolation.

Use Value: −1.5 V V_GS(th) ensures clean turn-on with 3.3 V host controller; 0.3 W P_tot allows compact PCB layout.

Industrial Sensor Signal Conditioning

Low-Power IoT Node Power Management

Use Scenario: Isolating analog sensor supply rails in 24 V industrial field transmitters.

IC Role / Device Role / Timing Role: Precision low-leakage switch enabling rail selection between reference and measurement paths.

Use Value: −100 nA I_DSS at 125 °C minimizes offset drift; −100 nA I_GSS preserves high-impedance node integrity.

Use Scenario: Managing battery-powered subsystem wake-up sequencing in wireless sensor nodes.

IC Role / Device Role / Timing Role: Ultra-low standby current switch for MCU-peripheral power gating.

Use Value: −0.1 μA I_DSS at 25 °C and −1 μA at 125 °C extends battery life in deep-sleep modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel small-signal MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 4.5 Ω max at V_GS = −4.5 V; lower V_GS(th) (−0.5 to −1.2 V); SOT-23 package.	Higher drive sensitivity but smaller thermal mass; less avalanche ruggedness (E_AS not specified).	Prefer for space-constrained 3.3 V systems where gate drive margin is tight and avalanche stress is minimal.
FDV303P	R_DS(on) = 4 Ω max at V_GS = −4.5 V; V_GS(th) = −0.6 to −1.5 V; same SOT-23 footprint.	No AEC-Q101 qualification; lower E_AS rating (not specified); higher C_iss (25 pF).	Acceptable for cost-sensitive consumer-grade power switches where automotive reliability is not required.

Compared with DMN2004LK-7 and FDV303P, the BSS84PW trades slightly higher R_DS(on) for guaranteed avalanche performance, AEC-Q101 compliance, and tighter V_GS(th) distribution-making it preferred for automotive and industrial environments with transient stress.

Availability

BSS84PW is available at Aetrix Electronics and suitable for automotive lighting control, USB power management, industrial sensor conditioning, and low-power IoT node power gating requiring stable component supply across production lifecycles.

Supply support for BSS84PW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The SIPMOS® small-signal transistor product line delivers rugged, logic-compatible MOSFETs optimized for automotive body electronics, sensor interfaces, and low-power switching in harsh environments.

FAQ

Is BSS84PW suitable for high-side switching in 24 V automotive systems?

Yes. With −60 V V_DS, AEC-Q101 qualification, and 2.61 mJ avalanche energy rating, it safely handles 24 V nominal systems plus load-dump transients up to ±40 V. Its −1.5 V typical V_GS(th) ensures reliable turn-on using standard 3.3 V or 5 V microcontroller outputs without external level shifters.

What is the maximum continuous drain current at 85 °C ambient?

At T_A = 85 °C, the derated continuous drain current is approximately −0.08 A, based on the ID vs. TA curve (Page 4) and 0.3 W P_tot limit. This assumes standard FR4 PCB with 6 cm² copper area; actual current depends on thermal layout and airflow.

Does BSS84PW have an integrated body diode, and what are its characteristics?

Yes. It includes a monolithic body diode with −0.15 A continuous forward current (I_S) and −0.84 to −1.12 V forward voltage (V_SD) at −0.15 A. Reverse recovery time is 23.6–35.4 ns, and Q_rr is 11.6–17.4 nC-suitable for moderate-frequency freewheeling in low-power DC-DC or motor drive stages.

Can BSS84PW replace the BSS84 in existing designs?

Yes, with verification of marking and layout. BSS84PW is the PG-SOT-323 packaged variant of the BSS84 (which uses SOT-23). Both share identical electrical specs, but the PW version has improved thermal resistance (R_thJA = 350 K/W vs. ~400 K/W for SOT-23) and is AEC-Q101 qualified-making it a drop-in upgrade for automotive or thermally demanding applications.

BSS84PW Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19.1 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BSS84PW FAQ

1.How can I place an order for BSS84PW through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84PW on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84PW reliable?

The price and inventory of BSS84PW are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84PW is usually 5 days.

3.What payment methods are accepted for BSS84PW?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84PW transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84PW?

BSS84PW orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84PW order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84PW?

For technical support, including BSS84PW datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84PW requirements.

6.How does Aetrix verify that BSS84PW is sourced from the original manufacturer or authorized distributors?

All BSS84PW products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84PW meets industry standards.

7.What is the process for return or replacement of BSS84PW?

All BSS84PW units undergo pre-shipment inspection (PSI). If there is an issue with BSS84PW, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84PW part is unused and in its original packaging.

Return procedure for BSS84PW:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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