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Infineon Technologies BSS84PW L6327

Name: BSS84PW L6327
Brand: Infineon Technologies
SKU: BSS84PW L6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS84PW L6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: BSS84PW L6327.pdf

Description:: MOSFET P-CH 60V 150MA SOT323-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS84PW L6327 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® small-signal MOSFET in PG-SOT-323 package, rated for −60 V drain-source voltage, 8 Ω R_DS(on) at V_GS = −10 V and I_D = −0.15 A, and qualified to AEC-Q101 for automotive use. It serves as a logic-level load switch or signal-level high-side switch in low-power analog and digital interface circuits.

For engineers reviewing the BSS84PW L6327 datasheet, BSS84PW L6327 pinout, BSS84PW L6327 application, or BSS84PW L6327 equivalent, key selection criteria include its −1.5 V typical gate threshold voltage, avalanche energy rating (E_AS = 2.61 mJ), dv/dt immunity (6 kV/μs), and halogen-free SMD construction per IEC61249-2-21.

Technical Context

This device operates as a normally-off P-channel MOSFET with a negative gate threshold (V_GS(th) = −1.0 to −2.0 V) enabling direct drive from 3.3 V or 5 V logic. Its low R_DS(on) at low gate voltages supports efficient switching in battery-powered and space-constrained applications.

The integrated body diode exhibits fast reverse recovery (t_rr = 23.6–35.4 ns, Q_rr = 11.6–17.4 nC) and is rated for −0.15 A continuous forward current. Thermal resistance R_thJA is 350 K/W on 6 cm² copper area, supporting stable operation up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−60 V - Supports rail-to-rail switching across 24 V industrial or 48 V telecom supply domains without breakdown.
R_DS(on)	8 Ω max @ V_GS = −10 V, I_D = −0.15 A - Ensures <120 mW conduction loss at full rated current.
V_GS(th)	−1.5 V typ - Enables reliable turn-on with standard 3.3 V CMOS outputs without level-shifting.
E_AS	2.61 mJ - Withstands single-pulse inductive energy surges common in relay or solenoid drive circuits.
dv/dt	6 kV/μs - Resists false triggering in noisy motor control or power supply environments.
Q_g	1.5 nC max - Allows fast switching with low gate-drive power, suitable for >1 MHz PWM in DC-DC bias rails.

Pinout & Package

Package: PG-SOT-323 (SMD, 3-pin, 1.3 mm × 1.7 mm × 0.95 mm), tape-and-reel (L6327: 3000 pcs/reel), marking "YBs".

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; accepts logic-level negative voltage to enable conduction; requires ≤20 V \|V_GS\| rating compliance.
Pin 2	Source (S)	Reference node for gate drive; connected to higher potential in high-side switch configurations.
Pin 3	Drain (D)	Current output path; thermally coupled to PCB via soldering point (R_thJS = 110 K/W).

Key Features

Feature	Design Value
Avalanche-rated	Rated for repetitive unclamped inductive switching (E_AS = 2.61 mJ, E_AR = 0.03 mJ), eliminating need for external snubbers in relay drivers.
Logic-level gate	V_GS(th) ≤ −2.0 V ensures full enhancement with 3.3 V microcontroller GPIO, reducing system component count.
dv/dt immune	6 kV/μs rating prevents parasitic turn-on during fast transients in motor gate-drive or power-supply feedback paths.
AEC-Q101 qualified	Validated for automotive under-hood applications including body control modules and sensor interfaces.

Applications

Automotive Body Control

Low-Power Sensor Interface

Use Scenario: Driving LED status indicators and small solenoids in door modules and lighting control units.

IC Role / Device Role / Timing Role: High-side load switch controlling 12 V/24 V loads with logic-compatible gate drive.

Use Value: Eliminates need for external level shifters or charge pumps due to −1.5 V V_GS(th), reducing BOM cost and PCB area.

Use Scenario: Isolating analog sensor signals (e.g., NTC thermistors, Hall sensors) from shared MCU supply rails.

IC Role / Device Role / Timing Role: Signal-path MOSFET used as bidirectional analog switch or rail-select multiplexer.

Use Value: Low R_DS(on) (8 Ω) and minimal capacitance (C_iss = 15.3 pF typ.) preserve signal integrity and bandwidth in sub-1 MHz sensor channels.

Industrial I/O Protection

USB Port Power Switching

Use Scenario: Providing overvoltage and reverse-polarity protection for 24 V field I/O terminals in PLC modules.

IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET acting as active crowbar and polarity guard.

Use Value: Avalanche capability (2.61 mJ) absorbs transient energy from inductive field wiring, improving system robustness without TVS stacking.

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in embedded host controllers.

IC Role / Device Role / Timing Role: Low-quiescent-current power switch placed between USB controller VDD and peripheral VBUS line.

Use Value: 0.3 W P_tot and 350 K/W thermal resistance allow safe operation at 150 mA load without heatsinking in compact USB hubs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UX-13	R_DS(on) = 45 mΩ @ −4.5 V (vs. 8 Ω @ −10 V); higher current rating (−4.2 A), larger SOT-23 package.	Targeted at higher-current load switching (>500 mA), not optimized for ultra-low I_D (<200 mA) precision analog switching.	Select when higher continuous current and lower R_DS(on) dominate over footprint and gate charge.
SI2301DS-T1-E3	R_DS(on) = 115 mΩ @ −2.5 V; V_GS(th) = −0.7 V min; smaller SOT-23 footprint but no AEC-Q101 qualification.	Suitable for consumer-grade portable electronics where automotive reliability is not required.	Select for cost-sensitive non-automotive designs needing faster turn-on at lower gate voltage.

Compared with DMG2305UX-13 and SI2301DS-T1-E3, BSS84PW L6327 offers superior thermal performance in minimal area (PG-SOT-323), guaranteed avalanche ruggedness, and AEC-Q101 validation-making it optimal for space-constrained, safety-critical, low-current switching where reliability trumps raw current capacity.

Availability

BSS84PW L6327 is available at Aetrix Electronics and suitable for automotive body control modules, industrial I/O protection circuits, low-power sensor interfaces, and USB power switching applications requiring stable component supply and long-term lifecycle support.

Supply support for BSS84PW L6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The BSS84PW belongs to Infineon's SIPMOS® small-signal MOSFET product line, designed specifically for logic-level, high-reliability switching in automotive and industrial edge nodes where space, thermal margin, and transient immunity are critical.

FAQ

Is BSS84PW L6327 suitable for high-frequency PWM switching?

Yes. With total gate charge Q_g ≤ 1.5 nC and turn-on delay t_d(on) ≤ 10 ns, the device supports clean switching up to 2–3 MHz in low-duty-cycle bias rail applications. Its low C_iss (15.3 pF typ.) and fast fall time (t_f ≤ 30.8 ns) minimize switching losses when driven by low-impedance 3.3 V sources.

What is the maximum continuous drain current at 100 °C ambient?

At T_A = 100 °C, the derated continuous drain current is −0.08 A, per the ID vs. TA curve on page 4 of the datasheet. This reflects thermal limitation of the PG-SOT-323 package on standard FR4 with 6 cm² copper; forced-air cooling or enhanced layout can improve this margin.

Does BSS84PW L6327 include an integrated ESD protection diode?

No. The device does not integrate dedicated ESD protection structures. Its gate oxide is rated for ±20 V V_GS, but external HBM-protected layout (e.g., series resistor + TVS) is recommended for handling >2 kV ESD events in final assembly, especially in automotive harness-connected nodes.

Can BSS84PW L6327 replace BSS84 in existing designs?

Yes, with caveats. Both share identical pinout and basic ratings, but BSS84PW offers improved R_DS(on) (8 Ω vs. 10 Ω), tighter V_GS(th) distribution, AEC-Q101 qualification, and halogen-free construction. Layout and gate-drive timing remain compatible; verify avalanche margin if replacing in inductive load circuits.

BSS84PW L6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19.1 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BSS84PW L6327 FAQ

1.How can I place an order for BSS84PW L6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84PW L6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84PW L6327 reliable?

The price and inventory of BSS84PW L6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84PW L6327 is usually 5 days.

3.What payment methods are accepted for BSS84PW L6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84PW L6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84PW L6327?

BSS84PW L6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84PW L6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84PW L6327?

For technical support, including BSS84PW L6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84PW L6327 requirements.

6.How does Aetrix verify that BSS84PW L6327 is sourced from the original manufacturer or authorized distributors?

All BSS84PW L6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84PW L6327 meets industry standards.

7.What is the process for return or replacement of BSS84PW L6327?

All BSS84PW L6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84PW L6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84PW L6327 part is unused and in its original packaging.

Return procedure for BSS84PW L6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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