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Infineon Technologies BSS87E6327T
- Part No.:
- BSS87E6327T
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
BSS87E6327T.pdf
- Description:
- MOSFET N-CH 240V 260MA SOT89-4
- Quantity:
- Payment:
- Shipping:
Inventory:8,061
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Product details
Overview
BSS87E6327T from Infineon Technologies is an N-channel enhancement-mode SIPMOS small-signal transistor in SOT-89 package, rated for 240 V drain-source breakdown voltage, 0.26 A continuous drain current at 25°C, and 3.9–6 Ω RDS(on) at VGS = 10 V. It serves as a logic-level switch in low-power DC-DC converters and load switching circuits where dv/dt robustness (6 kV/µs) and AEC-Q101 qualification are required.
For engineers reviewing the BSS87E6327T datasheet, BSS87E6327T pinout, BSS87E6327T application, or BSS87E6327T equivalent, key selection criteria include its 240 V V(BR)DSS, 0.26 A ID, 6 kV/µs dv/dt rating, AEC-Q101 qualification, and SOT-89 thermal performance with RthJA = 70 K/W on 6 cm² copper.
Technical Context
This device operates as a single N-channel MOSFET with logic-level gate drive compatibility (VGS(th) = 0.8–1.8 V), enabling direct interface with 3.3 V and 5 V microcontrollers. Its dv/dt immunity supports reliable operation in inductive switching environments such as automotive body electronics and industrial sensor interfaces.
The integrated body diode exhibits trr = 53.6–80.4 ns and Qrr = 101–152 nC, supporting moderate-frequency freewheeling in flyback and buck topologies. Thermal design is enabled by RthJC = 10 K/W (junction-to-case, Pin 2) and RthJA = 70 K/W on optimized PCB layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 240 V - Withstands up to 240 V drain-source blocking voltage before avalanche conduction. |
| RDS(on) @ VGS=10 V | 3.9–6 Ω - On-resistance range determines conduction loss in low-current switching paths. |
| ID (continuous) | 0.26 A @ TA=25°C - Maximum steady-state drain current under standard ambient conditions. |
| dv/dt rating | 6 kV/µs - Immunity to parasitic turn-on during fast voltage transients in inductive loads. |
| Qg | 3.7–5.5 nC - Total gate charge defines driver strength requirement for 100 kHz+ switching. |
| trr | 53.6–80.4 ns - Reverse recovery time of integrated body diode impacts efficiency in synchronous rectification. |
| VGS(th) | 0.8–1.8 V - Gate threshold ensures full enhancement with 3.3 V logic-level drive. |
Pinout & Package
Package: SOT-89 (TO-243AA), surface-mount, 3-pin, lead-free, RoHS-compliant, tape-and-reel (1000 pcs/reel). Thermal path optimized via exposed drain pad (Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Reference node for gate control; connects to ground or low-side return path. |
| Pin 2 (Drain) | Drain terminal | Main power output node; thermally connected to PCB copper for heat dissipation. |
| Pin 3 (Gate) | Gate terminal | High-impedance control input; requires <±20 V absolute rating and ESD protection. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 1.8 V enables direct MCU GPIO control without level-shifting circuitry. |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and lighting drivers. |
| dv/dt immune | 6 kV/µs rating prevents false triggering in noisy inductive load environments. |
| Halogen-free & RoHS | Complies with IEC61249-2-21 and EU RoHS Directive for green manufacturing. |
| Optimized thermal footprint | RthJA = 70 K/W on 6 cm² copper enables >0.5 W dissipation in compact layouts. |
Applications
| Automotive Body Control Unit | Industrial Sensor Interface |
|---|---|
Use Scenario: Switching 12 V loads (e.g., LED indicators, solenoids) in vehicle door modules. IC Role / Device Role / Timing Role: Low-side logic-level switch controlled by 3.3 V CAN/LIN microcontroller outputs. Use Value: AEC-Q101 qualification and 6 kV/µs dv/dt immunity ensure reliability across temperature and electrical noise. | Use Scenario: Isolating analog sensor supply rails in programmable logic controllers. IC Role / Device Role / Timing Role: High-voltage (240 V) load switch enabling safe hot-swap of field sensors. Use Value: 240 V V(BR)DSS and 0.26 A ID support 24 V industrial bus with margin for surge events. |
| Low-Power DC-DC Converter | Smart Home Load Management |
Use Scenario: Synchronous rectifier in isolated flyback converter for IoT gateway power supply. IC Role / Device Role / Timing Role: Secondary-side MOSFET with fast body diode (trr < 81 ns) for 100–500 kHz operation. Use Value: Low Qg (3.7–5.5 nC) reduces gate drive loss; RDS(on) < 6 Ω limits conduction loss at 0.2 A. | Use Scenario: Remote-controlled switching of AC-powered smart outlets and lighting circuits. IC Role / Device Role / Timing Role: Primary-side DC control switch driving opto-isolated triac gate drivers. Use Value: SOT-89 package allows compact PCB layout; halogen-free construction meets consumer safety standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS84E6327HTSA1 | P-channel, −50 V V(BR)DSS, higher RDS(on) (10 Ω), lower |ID| (0.13 A) | Suitable only for high-side switching with inverted logic; not dv/dt rated | Select only if high-side topology and polarity inversion are required. |
| DMN2004LK3-7 | N-channel, 20 V V(BR)DSS, lower RDS(on) (2.2 Ω), higher ID (3.5 A), no AEC-Q101 | Not suitable for >24 V systems; lacks automotive qualification and dv/dt immunity | Prefer for low-voltage, high-current consumer applications without automotive requirements. |
Compared with BSS87E6327T, BSS84E6327HTSA1 offers complementary P-channel functionality but sacrifices voltage rating and dv/dt robustness, while DMN2004LK3-7 delivers superior conduction performance at the cost of system voltage headroom and automotive compliance.
Availability
BSS87E6327T is available at Aetrix Electronics and suitable for automotive body control units, industrial sensor interfaces, low-power DC-DC converters, and smart home load management requiring stable component supply and long-term lifecycle support.
Supply support for BSS87E6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification.
The SIPMOS small-signal transistor product line targets logic-level switching in space-constrained, thermally demanding applications-especially automotive and industrial systems requiring AEC-Q101 validation and high dv/dt immunity.
FAQ
Is BSS87E6327T suitable for 24 V automotive battery applications?
Yes. With 240 V V(BR)DSS, AEC-Q101 qualification, and 6 kV/µs dv/dt rating, it safely handles load-dump transients and inductive kickback in 12 V/24 V automotive systems. Its 0.26 A ID suits indicator, relay, and small solenoid drives.
What is the maximum gate drive voltage for BSS87E6327T?
The absolute maximum gate-source voltage is ±20 V per datasheet. For reliable operation, gate drive should be limited to 10 V for optimal RDS(on) and 4.5 V for logic-level compatibility. Exceeding ±20 V risks permanent gate oxide damage.
Does BSS87E6327T have an integrated body diode?
Yes. It features a monolithic parasitic body diode with VSD = 0.82–1.2 V at IF = 0.26 A and trr = 53.6–80.4 ns. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification.
Can BSS87E6327T be used in surface-mount reflow processes?
Yes. It uses Pb-free lead plating and is qualified for standard SnAgCu reflow profiles (J-STD-020). The SOT-89 package supports peak temperatures up to 260°C for ≤ 30 seconds, with thermal relief via Pin 2 (drain) soldered to large copper area.
BSS87E6327T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 97 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT89-4-2
BSS87E6327T FAQ
1.How can I place an order for BSS87E6327T through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS87E6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS87E6327T reliable?
The price and inventory of BSS87E6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS87E6327T is usually 5 days.
3.What payment methods are accepted for BSS87E6327T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS87E6327T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS87E6327T?
BSS87E6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS87E6327T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS87E6327T?
For technical support, including BSS87E6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS87E6327T requirements.
6.How does Aetrix verify that BSS87E6327T is sourced from the original manufacturer or authorized distributors?
All BSS87E6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS87E6327T meets industry standards.
7.What is the process for return or replacement of BSS87E6327T?
All BSS87E6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSS87E6327T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS87E6327T part is unused and in its original packaging.
Return procedure for BSS87E6327T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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