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Infineon Technologies BSS87H6327XTSA1

Part No.:
BSS87H6327XTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-243AA
Datasheet:
AetrixBSS87H6327XTSA1.pdf
Description:
MOSFET N-CH 240V 260MA SOT89-4
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,122

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Product details

Overview

BSS87H6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal transistor in SOT-89 package, rated for 240 V drain-source breakdown voltage, 0.26 A continuous drain current at 25°C, and 3.9–6 Ω RDS(on) at VGS = 10 V. It serves as a high-voltage, low-current switching element in power management stages of industrial sensor interfaces and LED driver bias circuits.

For engineers reviewing the BSS87H6327XTSA1 datasheet, BSS87H6327XTSA1 pinout, BSS87H6327XTSA1 application, or BSS87H6327XTSA1 equivalent, key selection criteria include dv/dt rating (6 kV/µs), gate threshold voltage range (0.8–1.8 V), reverse diode recovery time (53.6–80.4 ns), and AEC-Q101 qualification for automotive-adjacent reliability.

Technical Context

This device operates as a single N-channel MOSFET with logic-level gate drive compatibility-enabling direct interface with 3.3 V and 5 V microcontrollers without level-shifting. Its 240 V V(BR)DSS and 6 kV/µs dv/dt rating support robust operation in inductive load switching environments where voltage transients exceed standard 100 V devices.

The integrated body diode exhibits 0.82–1.2 V forward voltage at 0.26 A and 53.6–80.4 ns reverse recovery time, making it suitable for freewheeling paths in low-duty-cycle DC-DC flyback snubbers and relay drivers where fast turn-off and low conduction loss are jointly required.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS240 V - Withstands up to 240 V drain-source blocking voltage before avalanche conduction begins.
RDS(on) @ VGS=10 V3.9–6 Ω - On-resistance determines conduction loss in linear or saturated switching applications.
ID (continuous)0.26 A @ TA=25°C - Maximum steady-state current under free-air conditions with minimal PCB copper.
dv/dt rating6 kV/µs - Enables reliable operation during rapid voltage transients in inductive switching circuits.
VGS(th)0.8–1.8 V - Threshold voltage range ensures turn-on with standard logic-level outputs (e.g., STM32 GPIO).
Qg3.7–5.5 nC - Total gate charge impacts switching speed and driver strength requirements.
trr53.6–80.4 ns - Reverse recovery time governs diode commutation losses in freewheeling configurations.

Pinout & Package

Package: SOT-89 (TO-243AA), surface-mount, 3-terminal plastic package with exposed drain pad for thermal dissipation. Pin 2 is drain-connected tab; leads are gull-wing, RoHS-compliant, Pb-free plated.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate control; connects to ground or low-side return path.
Pin 2 (Drain)Drain terminal / thermal padMain current-carrying output; electrically and thermally connected to exposed metal tab.
Pin 3 (Gate)Control inputHigh-impedance MOSFET gate; requires <±20 V absolute max and ESD protection per JESD22-A114-HBM Class 1A.

Key Features

FeatureDesign Value
Logic-level gate driveTurns on fully at VGS ≥ 4.5 V, enabling direct MCU GPIO control without external level shifters.
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress per AEC specification.
dv/dt ruggedness6 kV/µs rating prevents spurious turn-on during fast voltage transients in relay or solenoid drive circuits.
Halogen-free constructionComplies with IEC61249-2-21; eliminates brominated flame retardants for environmental compliance.
Low gate chargeQg ≤ 5.5 nC reduces driver power consumption and enables higher-frequency PWM operation.

Applications

Industrial Sensor Power SwitchingLED Bias Control

Use Scenario: Switching 24 V supply to analog sensor front-ends in factory automation PLC modules.

IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch controlling sensor enable line with fast turn-off to minimize leakage during sleep mode.

Use Value: 0.82–1.2 V body diode forward drop minimizes standby power loss; 240 V rating accommodates 24 V systems with margin for surge events.

Use Scenario: Constant-current biasing of high-brightness indicator LEDs in automotive dashboard backlighting.

IC Role / Device Role / Timing Role: Linear-mode current regulator using source-degeneration feedback, operating below 0.26 A limit.

Use Value: Tight VGS(th) tolerance (0.8–1.8 V) ensures consistent turn-on across temperature; 6 kV/µs dv/dt immunity suppresses false triggering from display noise coupling.

Relay Driver InterfaceFlyback Snubber Diode Replacement

Use Scenario: Driving 12 V/24 V electromagnetic relays in HVAC control panels with microcontroller GPIO.

IC Role / Device Role / Timing Role: Low-side switch interfacing between 3.3 V MCU and relay coil, handling inductive kickback via integrated body diode.

Use Value: 53.6–80.4 ns trr limits voltage overshoot during coil de-energization; AEC-Q101 qualification supports extended field life in harsh environments.

Use Scenario: Replacing discrete Schottky + MOSFET combinations in low-power flyback converters (<5 W).

IC Role / Device Role / Timing Role: Integrated switch-and-freewheeling element eliminating external diode, reducing BOM count and layout area.

Use Value: RDS(on) ≤ 6 Ω at 10 V ensures <150 mW conduction loss at 0.26 A; Ciss = 77.5–97 pF enables clean gate drive with 100 Ω series resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BSS84H6327XTSA1P-channel counterpart; V(BR)DSS = −50 V, |RDS(on)| = 10 Ω @ VGS = −10 V; not voltage-compatible for high-side 240 V use.Suitable only for low-voltage high-side switching (≤50 V), not direct replacement in 240 V drain circuits.Select only when topology requires P-channel configuration and voltage rating permits.
DMN2004LK3-7N-channel, V(BR)DSS = 20 V, RDS(on) = 3.5 Ω @ 4.5 V; lacks dv/dt rating and AEC-Q101 qualification.Restricted to ≤20 V systems; unsuitable for 24 V+ industrial transients or automotive-adjacent designs.Use only in cost-sensitive, low-voltage consumer applications where 240 V capability is unnecessary.

Compared with BSS84H6327XTSA1 and DMN2004LK3-7, the BSS87H6327XTSA1 uniquely combines 240 V blocking, logic-level gate, AEC-Q101 qualification, and 6 kV/µs dv/dt rating-making it irreplaceable in high-reliability, high-voltage switching roles where alternatives fail on voltage or ruggedness.

Availability

BSS87H6327XTSA1 is available at Aetrix Electronics and suitable for industrial sensor power switching, LED bias control, relay driver interfaces, and flyback snubber replacement requiring stable component supply and long-term lifecycle support.

Supply support for BSS87H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The SIPMOS small-signal transistor product line delivers high-voltage, logic-compatible MOSFETs optimized for space-constrained, reliability-critical applications in industrial automation, building controls, and automotive subsystems.

FAQ

Is BSS87H6327XTSA1 suitable for 24 V automotive body electronics?

Yes-it is AEC-Q101 qualified and rated for 240 V V(BR)DSS, providing ample margin above 24 V system peaks. Its 6 kV/µs dv/dt rating and −55°C to +150°C operating range meet automotive environmental demands, though it is not intended for engine bay primary power rails.

What is the maximum safe gate-source voltage for continuous operation?

The absolute maximum VGS is ±20 V per datasheet. For reliable long-term operation, gate drive should be limited to −12 V to +12 V, with transient spikes clamped by external Zener diodes if driving inductive loads with high di/dt.

Can this MOSFET replace a discrete 1N4007 + small-signal transistor in a flyback snubber?

Yes-the integrated body diode has 0.82–1.2 V VSD and 53.6–80.4 ns trr, outperforming 1N4007 (trr > 30 µs) in speed and reducing snubber losses. However, its 0.26 A continuous rating limits use to sub-5 W converters.

Does the SOT-89 package require thermal vias for 0.26 A operation?

At 0.26 A and 25°C ambient, the SOT-89 footprint with minimum copper (per datasheet Fig. 1) yields ~125 K/W RthJA. Thermal vias under the drain pad reduce RthJA to ~70 K/W, lowering junction temperature by ~25°C-recommended for sustained operation above 70°C ambient or pulsed loads exceeding 0.21 A.

BSS87H6327XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS™
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
240 V
Current - Continuous Drain (Id) @ 25°C:
260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id:
1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
97 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT89-4-2

BSS87H6327XTSA1 FAQ

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Please submit a Request for Quotation (RFQ) for BSS87H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BSS87H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS87H6327XTSA1 is usually 5 days.

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6.How does Aetrix verify that BSS87H6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS87H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS87H6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSS87H6327XTSA1?

All BSS87H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS87H6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS87H6327XTSA1 part is unused and in its original packaging.

Return procedure for BSS87H6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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