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Infineon Technologies BSV236SP L6327
- Part No.:
- BSV236SP L6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BSV236SP L6327.pdf
- Description:
- MOSFET P-CH 20V 1.5A SOT363-6
- Quantity:
- Payment:
- Shipping:
Inventory:8,413
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Product details
Overview
BSV236SP L6327 from Infineon Technologies is a P-channel enhancement-mode MOSFET in SOT-363 package, rated for −20 V VDS, 175 mΩ RDS(on) at −4.5 V VGS, and −1.5 A continuous drain current. It features Super Logic Level gate drive (2.5 V rated), avalanche rating, and 150 °C operation-used in compact DC-DC load switches and battery protection circuits.
For engineers reviewing the BSV236SP L6327 datasheet, BSV236SP L6327 pinout, BSV236SP L6327 application, or BSV236SP L6327 equivalent, key selection criteria include logic-level gate compatibility, low RDS(on) at 2.5 V, avalanche ruggedness, thermal resistance (RthJA = 110 K/W with 6 cm² copper), and SOT-363 footprint constraints.
Technical Context
This device implements a trench-based OptiMOS™-P structure optimized for low gate charge (Qg = 3.8–5.7 nC) and fast switching (tr = 8.5–12.7 ns, tf = 12.2–18.3 ns). Its −0.6 to −1.2 V gate threshold (VGS(th)) ensures reliable turn-on with 2.5 V logic while maintaining low leakage (IDSS ≤ −100 µA at 150 °C).
The integrated body diode exhibits VSD = 0.88–1.3 V at rated current and trr = 16.4–20.5 ns, supporting synchronous rectification and reverse-current handling in buck converters and power OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - maximum blocking voltage in high-side or reverse-polarity protection configurations |
| RDS(on) | 175 mΩ max at VGS = −4.5 V, ID = −1.5 A - enables <150 mW conduction loss at full load |
| ID (cont) | −1.5 A at TA = 25 °C - supports compact 1.2 W load switch designs without heatsink |
| EAS | 9.5 mJ single-pulse avalanche energy - allows unclamped inductive switching in relay drivers |
| Qg | 3.8–5.7 nC - reduces gate drive power and enables >1 MHz PWM in space-constrained SMPS |
| VGS(th) | −0.6 to −1.2 V - ensures robust turn-on with 2.5 V microcontroller GPIOs |
| Tj max | +150 °C - supports operation in sealed enclosures or automotive under-hood environments |
Pinout & Package
SOT-363 (SC-88) surface-mount package with 6 terminals, 2 mm × 2 mm footprint, and 0.65 mm pitch. Designed for automated placement and reflow soldering on FR4 PCBs with minimum 6 cm² copper area for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | Drain | Common drain connection for dual-channel configuration; electrically tied internally |
| 3 | Gate | Single gate input controlling both channels; requires external gate resistor for EMI control |
| 4, 5, 6 | Source | Common source node; pins 4/5/6 are internally bonded and must be connected to same net |
Key Features
| Feature | Design Value |
|---|---|
| Super Logic Level Gate | Guaranteed turn-on at VGS = −2.5 V, enabling direct drive from 2.5 V/3.3 V MCUs without level shifters |
| Avalanche Rated | 9.5 mJ single-pulse EAS supports inductive load switching without external snubbers |
| dv/dt Rated | −6 kV/µs immunity prevents false turn-on during high-slew transients in motor drives |
| Thermal Robustness | RthJA = 110 K/W with 6 cm² copper - sustains −1.2 A continuous current at 70 °C ambient |
| Low Qgd/Qg Ratio | Qgd = 1.8–2.7 nC / Qg = 3.8–5.7 nC - improves hard-switching efficiency and EMI profile |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in portable Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as bidirectional blocking switch controlled by protection IC. Use Value: 175 mΩ RDS(on) limits voltage drop to <260 mV at 1.5 A, preserving battery runtime and thermal margin. | Use Scenario: Hot-swap power control for USB Type-A ports in embedded hosts. IC Role / Device Role / Timing Role: Load switch isolating downstream peripherals during insertion/removal events. Use Value: −20 V VDS rating accommodates USB 2.0/3.0 transient surges; 2.5 V logic compatibility eliminates gate driver IC. |
| DC-DC Synchronous Rectifier | Automotive Body Control Module |
Use Scenario: Secondary-side rectification in isolated 5 V/3.3 V buck-derived supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in flyback or forward converter. Use Value: VSD = 0.88 V and trr = 16.4 ns reduce conduction and recovery losses versus 0.4 V Schottky with 30 ns trr. | Use Scenario: LED tail-light dimming and relay coil driving in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Low-power load switch interfacing MCU GPIO to resistive/inductive loads. Use Value: +150 °C Tj max and avalanche rating ensure reliability in under-dash temperature cycling (−40 to +125 °C ambient). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(on) = 46 mΩ @ −4.5 V (lower), but VDS = −20 V same; SOT-23 package (single channel) | Higher current density per channel but no dual-drain integration; less suitable for space-constrained dual-path designs | Select when single-channel performance and lower RDS(on) outweigh footprint and dual-channel needs |
| SI2301BDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; VGS(th) = −0.4 to −1.0 V; SOT-23 package | Lower gate threshold increases risk of partial turn-on with noise; lacks avalanche rating and dv/dt immunity | Select only in noise-immune, non-inductive, low-voltage (<12 V) applications where ruggedness is secondary |
Compared with DMG2305U-7 and SI2301BDS-T1-GE3, BSV236SP L6327 uniquely combines dual-drain SOT-363 integration, guaranteed 2.5 V turn-on, avalanche ruggedness, and dv/dt immunity-making it optimal for compact, safety-critical load switching where layout area and transient resilience are constrained.
Availability
BSV236SP L6327 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous rectifiers, and automotive body control modules requiring stable component supply and long-term industrial availability.
Supply support for BSV236SP L6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification (CECC approved).
The OptiMOS™-P product line delivers high-performance P-channel MOSFETs optimized for logic-level drive, low RDS(on), and ruggedness in space- and thermally constrained power switches.
FAQ
What is the maximum safe operating temperature for BSV236SP L6327?
The junction temperature must not exceed +150 °C under any operating condition. Derating begins at TA = 70 °C, where continuous drain current drops to −1.2 A. Thermal design must ensure RthJA ≤ 110 K/W using ≥6 cm² copper area on FR4 PCB to meet this limit at full load.
Can BSV236SP L6327 be driven directly from a 3.3 V microcontroller GPIO?
Yes-its −0.6 to −1.2 V gate threshold and Super Logic Level rating guarantee full enhancement at VGS = −2.5 V. A 3.3 V GPIO pulling gate to ground yields −3.3 V VGS, well within the ±12 V rating and sufficient for <175 mΩ RDS(on) across temperature.
Does BSV236SP L6327 include an integrated body diode, and what are its characteristics?
Yes-it features a monolithic body diode with VSD = 0.88–1.3 V at |IF| = |ID| and trr = 16.4–20.5 ns. This enables use in synchronous rectification and freewheeling paths, though external Schottky diodes may be preferred for ultra-low VF in high-frequency designs.
How is the SOT-363 pinout configured for dual-drain operation?
Pins 1 and 2 are internally connected as a common drain; pins 4, 5, and 6 are internally bonded as a common source; pin 3 is the sole gate. This configuration supports parallel current sharing or redundant path routing without external interconnects-critical for high-reliability load switching layouts.
BSV236SP L6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 175mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.7 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 228 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 560mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BSV236SP L6327 FAQ
1.How can I place an order for BSV236SP L6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSV236SP L6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSV236SP L6327 reliable?
The price and inventory of BSV236SP L6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSV236SP L6327 is usually 5 days.
3.What payment methods are accepted for BSV236SP L6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSV236SP L6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSV236SP L6327?
BSV236SP L6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSV236SP L6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSV236SP L6327?
For technical support, including BSV236SP L6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSV236SP L6327 requirements.
6.How does Aetrix verify that BSV236SP L6327 is sourced from the original manufacturer or authorized distributors?
All BSV236SP L6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSV236SP L6327 meets industry standards.
7.What is the process for return or replacement of BSV236SP L6327?
All BSV236SP L6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSV236SP L6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSV236SP L6327 part is unused and in its original packaging.
Return procedure for BSV236SP L6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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