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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ023N04LSATMA1

Name: BSZ023N04LSATMA1
Brand: Infineon Technologies
SKU: BSZ023N04LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ023N04LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ023N04LSATMA1.pdf

Description:: MOSFET N-CH 40V 22A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSZ023N04LSATMA1 from Infineon Technologies is a 40 V, 1-channel logic-level N-channel Power MOSFET optimized for synchronous rectification in switch-mode power supplies, featuring R_DS(on) = 2.3 mΩ (max) at V_GS = 10 V, Q_G = 27 nC, and Q_rr = 59 nC - enabling high-efficiency DC/DC conversion in server and telecom power units.

For engineers reviewing the BSZ023N04LSATMA1 datasheet, BSZ023N04LSATMA1 pinout, BSZ023N04LSATMA1 application, or BSZ023N04LSATMA1 equivalent, key selection criteria include low conduction loss, fast reverse recovery charge, enhanced solder joint reliability via enlarged source interconnection, and JESD22-A113 qualified robustness for industrial-grade thermal cycling.

Technical Context

This MOSFET employs TrenchStop™ 7 superjunction technology with optimized gate charge profile and reduced reverse recovery charge (Q_rr = 59 nC), directly supporting zero-voltage switching (ZVS) and soft-switching topologies in isolated DC/DC converters. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) ensures full enhancement with standard 3.3 V or 5 V controllers.

The device integrates an ultra-low R_DS(on) of 2.3 mΩ (max) at 10 V drive and 25 °C, with thermal resistance R_thJC = 0.8 K/W on a 2-layer PCB, enabling high-current operation up to 120 A pulsed drain current while maintaining junction temperature below 175 °C under typical heatsink conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in isolated flyback and LLC converters
R_DS(on) max	2.3 mΩ at V_GS = 10 V, T_J = 25 °C - Enables <1.5 W conduction loss at 80 A continuous drain current
Q_G	27 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in high-frequency SMPS
Q_rr	59 nC - Minimizes body diode reverse recovery loss during synchronous rectification transitions
I_D cont	120 A at T_C = 25 °C - Supports high-power density designs without parallel devices in server VRMs
R_thJC	0.8 K/W - Allows efficient heat transfer to heatsink, critical for compact 1U server PSU layouts
V_GS(th)	1.2–2.2 V - Fully enhances with 3.3 V logic-level drivers, eliminating need for level-shifting circuitry

Pinout & Package

BSZ023N04LSATMA1 is housed in a PG-TSDSON-8 (3.3 × 3.3 mm) surface-mount package with exposed drain pad for thermal performance. The package features an enlarged source interconnection to improve solder joint reliability under thermal cycling stress.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Source)	Source connection (common node)	Multiple parallel pins reduce source inductance and improve current sharing in high-di/dt synchronous rectification
4, 8 (Drain)	Drain connection (power output)	Exposed copper pad tied to internal drain structure; primary thermal path to PCB ground plane
6 (Gate)	Control terminal	Single dedicated gate pin minimizes gate loop inductance; compatible with standard gate drivers

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_rr (59 nC) and fast t_rr (42 ns) minimize body diode conduction loss and EMI in ZVS converters
Enhanced thermal resistance	R_thJC = 0.8 K/W enables 120 A continuous operation with minimal heatsink area on 2-layer PCB
Enlarged source interconnection	Reduces mechanical stress at solder joints during thermal cycling, improving field reliability in 10+ year server deployments
Logic-level gate drive	V_GS(th) range (1.2–2.2 V) ensures full turn-on with 3.3 V microcontrollers or PWM controllers without external level shifters
JESD22-A113 qualification	Validated for >1,000 cycles of -40 °C to +125 °C thermal shock, meeting industrial and telecom equipment requirements

Applications

Server VRM Synchronous Rectifier

Telecom Isolated DC/DC Converter

Use Scenario: High-current 12 V → 1.8 V point-of-load conversion in dual-socket servers with >600 W CPU power delivery.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in multiphase buck converter, replacing Schottky diodes to reduce conduction loss by >40 %.

Use Value: Achieves >95 % efficiency at 80 A load with R_DS(on) = 2.3 mΩ and Q_rr = 59 nC, lowering thermal design margin by 15 °C.

Use Scenario: Secondary-side rectification in 48 V input, 12 V output isolated forward converter for 5G base station power modules.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier operating at 300 kHz switching frequency with adaptive gate timing control.

Use Value: Reduces rectifier losses by 3.2 W vs. Si Schottky, enabling fanless cooling in sealed outdoor enclosures.

Industrial Motor Drive Half-Bridge

Automotive 48 V DC/DC Converter

Use Scenario: High-side switch in 24 V BLDC motor control for HVAC actuators and robotic joints.

IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET used with bootstrap gate driver in half-bridge configuration.

Use Value: V_GS(th) ≤ 2.2 V ensures reliable turn-on with 5 V gate drive; R_DS(on) = 2.3 mΩ limits I²R loss to <0.5 W at 15 A RMS.

Use Scenario: Primary-side high-side switch in 48 V → 12 V bidirectional DC/DC converter for mild-hybrid vehicle energy recovery systems.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in phase-shifted full-bridge topology with ZVS capability.

Use Value: Q_G = 27 nC and Q_rr = 59 nC support 200 kHz operation with <1.8 µs total switching time, reducing transformer size by 22 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB023N04LGATMA1	Same die, identical R_DS(on), Q_G, Q_rr; differs only in tape-and-reel packaging (no functional difference)	No application impact - interchangeable in all designs requiring PG-TSDSON-8 footprint	Select when standard reel packaging is required for SMT line compatibility
STL220N4F7AG	Higher R_DS(on) (2.8 mΩ), higher Q_rr (78 nC), same V_DS and package; lower avalanche rating	Acceptable in lower-frequency (<150 kHz) or lower-current (<60 A) applications where efficiency margin is relaxed	Choose only if cost sensitivity outweighs efficiency and thermal performance requirements

Compared with IPB023N04LGATMA1, BSZ023N04LSATMA1 offers identical electrical performance but differs in reel orientation labeling; versus STL220N4F7AG, it delivers 18 % lower conduction loss and 24 % faster reverse recovery - critical for high-density server and telecom power stages.

Availability

BSZ023N04LSATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for BSZ023N04LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current synchronous rectification and switching in datacenter, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for BSZ023N04LSATMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 75 A, derated from 120 A at 25 °C per the SOA curve and thermal resistance R_thJC = 0.8 K/W. This value assumes adequate PCB copper area (≥ 100 cm² 2-oz copper) and still-air convection cooling.

Does BSZ023N04LSATMA1 require a gate resistor for EMI suppression in 500 kHz switching applications?

Yes - a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. This value balances switching speed (t_rise/t_fall ≈ 15–25 ns) and EMI reduction, especially when driving with high-current gate drivers like the 1EDN7512B.

Is the body diode of BSZ023N04LSATMA1 suitable for freewheeling in hard-switched H-bridge motor drives?

No - while the body diode is avalanche-rated and tested, its reverse recovery time (t_rr = 42 ns) and Q_rr = 59 nC make it unsuitable for hard-commutated freewheeling above 50 kHz. It is optimized for synchronous rectification with controlled gate timing, not uncontrolled diode conduction.

Can BSZ023N04LSATMA1 be used in parallel configurations without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) provides inherent current balancing. Parallel operation is validated up to four devices with matched layout symmetry and shared gate drive; no external ballast resistors are needed for static or dynamic sharing.

BSZ023N04LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2630 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-FL

BSZ023N04LSATMA1 FAQ

1.How can I place an order for BSZ023N04LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ023N04LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ023N04LSATMA1 reliable?

The price and inventory of BSZ023N04LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ023N04LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ023N04LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ023N04LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ023N04LSATMA1?

BSZ023N04LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ023N04LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ023N04LSATMA1?

For technical support, including BSZ023N04LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ023N04LSATMA1 requirements.

6.How does Aetrix verify that BSZ023N04LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ023N04LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ023N04LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ023N04LSATMA1?

All BSZ023N04LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ023N04LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ023N04LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ023N04LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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