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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ037N06LS5ATMA1

Name: BSZ037N06LS5ATMA1
Brand: Infineon Technologies
SKU: BSZ037N06LS5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ037N06LS5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: BSZ037N06LS5ATMA1.pdf

Description:: MOSFET N-CH 60V 18A/40A TSDSON

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Product details

Overview

BSZ037N06LS5ATMA1 from Infineon Technologies is an N-channel 60 V OptiMOS™ power MOSFET in TSDSON-8 FL package, optimized for high-efficiency synchronous rectification in SMPS. It delivers R_DS(on) = 3.7 mΩ (max) at V_GS = 10 V, supports 104 A continuous drain current at T_C = 25 °C, and features 100% avalanche tested ruggedness for reliable operation in DC-DC converters and server VRMs.

For engineers reviewing the BSZ037N06LS5ATMA1 datasheet, BSZ037N06LS5ATMA1 pinout, BSZ037N06LS5ATMA1 application, or BSZ037N06LS5ATMA1 equivalent, key selection criteria include its low Q_oss (32 nC), fast switching (t_d(off) = 26 ns), superior thermal resistance (R_thJC = 1.8 °C/W bottom-side), and RoHS/halogen-free compliance for industrial-grade power stages.

Technical Context

This device is a logic-level compatible, enhancement-mode silicon MOSFET designed for high-frequency switching in primary- and secondary-side power conversion. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) enables robust turn-on with 4.5 V drive, while low C_iss (2400–3100 pF) and C_oss (500–650 pF) minimize switching losses in hard-switched topologies.

The integrated body diode exhibits fast reverse recovery (t_rr = 24–48 ns, Q_rr = 11–22 nC) and low forward voltage (V_SD = 0.80–1.0 V at I_F = 20 A), making it suitable for synchronous rectification where diode conduction and commutation behavior directly impact efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input systems and 12 V/5 V output rails with margin.
R_DS(on), max	3.7 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 100 A, critical for high-current VRMs.
I_D, cont	104 A at T_C = 25 °C - Supports high-power density designs with minimal parallel devices.
Q_oss	32 nC - Low output charge reduces turn-off energy and improves light-load efficiency in LLC resonant converters.
t_d(off)	26 ns - Fast turn-off minimizes overlap loss during dead-time in synchronous buck or half-bridge configurations.
R_thJC	1.8 °C/W (bottom-side) - Enables direct thermal coupling to heatsink or PCB copper, supporting >100 W dissipation with minimal ΔT.
Q_g	18 nC (0–4.5 V) - Optimized gate charge for efficient driving with standard gate drivers (e.g., IR35201, UCC27531).

Pinout & Package

Package: TSDSON-8 FL (exposed drain pad, 3.3 mm × 3.3 mm, 0.55 mm height), thermally enhanced with bottom-side thermal pad for PCB soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain connection (common source for all pins except Gate)	All eight pins are internally connected to the drain terminal; used for high-current path and thermal conduction to PCB.
G (Gate)	Control terminal	Single dedicated gate pin (Pin 4 per datasheet layout) - requires low-inductance routing to minimize ringing and EMI.
S (Source)	Reference node for gate drive and current sensing	Source pins (Pins 1–3, 5–8 labeled "S" in schematic symbol) form Kelvin source return for accurate gate control and R_DS(on)-based current monitoring.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_gd/Q_g ratio (5.3/18 nC) and fast t_r/t_f (5/5 ns) reduce shoot-through risk and improve ZVS/ZCS timing margins.
100% avalanche rated	E_AS = 117 mJ (I_D = 20 A) - withstands unclamped inductive switching events without degradation in flyback or active clamp circuits.
Superior thermal resistance	R_thJC = 1.8 °C/W (bottom) - allows >69 W power dissipation at T_C = 25 °C, enabling compact thermal design without external heatsinks.
Logic-level gate drive	V_GS(th) = 1.1–2.3 V - ensures full enhancement with 3.3 V or 5 V controllers, eliminating need for level shifters in low-voltage gate driver ICs.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 - satisfies environmental requirements for industrial and telecom equipment without compromising reliability.

Applications

Server Voltage Regulator Modules (VRMs)

Telecom DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 50–200 A at 0.8–1.8 V to CPUs/GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in high-side or low-side position, switching at 300–1000 kHz with precise dead-time control.

Use Value: 3.7 mΩ R_DS(on) and 32 nC Q_oss reduce conduction and switching losses by >15% vs. legacy 5 mΩ parts, improving full-load efficiency to >95%.

Use Scenario: 48 V input to 12 V/5 V isolated or non-isolated converters in base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC topology, operating under wide load and temperature variation.

Use Value: 100% avalanche rating and 150 °C T_j(max) ensure robustness during line transients and thermal cycling in outdoor telecom cabinets.

Industrial Motor Drive Inverters

Automotive On-Board Chargers (OBC)

Use Scenario: Low-voltage (<60 V) three-phase inverter stages for BLDC motors in factory automation.

IC Role / Device Role / Timing Role: Half-bridge leg switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: Fast t_rr (24 ns) and low Q_rr (11 nC) minimize diode recovery losses and associated EMI, reducing snubber requirements.

Use Scenario: Bidirectional AC/DC and DC/DC stages in 3.3–22 kW OBCs for EV charging.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in secondary-side LLC resonant converter, operating up to 150 °C ambient.

Use Value: R_thJC = 1.8 °C/W and 104 A I_D rating enable single-device implementation for 6.6 kW output, reducing BOM count and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ (lower), but Q_g = 45 nC (higher); TSDSON-8 package, same pinout.	Better conduction loss at high current, but higher gate drive loss and slower switching (t_d(off) = 40 ns).	Prefer when conduction dominates (e.g., low-frequency, high-duty-cycle operation); avoid in >500 kHz SMPS due to increased switching loss.
IPB031N06N3	R_DS(on) = 3.1 mΩ (lower), Q_oss = 28 nC (lower); PG-TDSON-8 package, identical mechanical footprint.	Marginally better efficiency across full load range, but not 100% avalanche tested per datasheet.	Select when maximum efficiency is prioritized and system-level overvoltage protection is implemented externally.

Compared with STL220N6F7 and IPB031N06N3, BSZ037N06LS5ATMA1 offers balanced trade-offs: verified avalanche ruggedness for unclamped conditions, lower Q_g than STL220N6F7 for faster switching, and broader industrial qualification than IPB031N06N3-making it optimal for cost-sensitive, reliability-critical SMPS designs.

Availability

BSZ037N06LS5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSZ037N06LS5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-density power conversion in data center, telecom, and industrial applications-emphasizing low R_DS(on), fast switching, and ruggedness under real-world transient stress.

FAQ

What is the maximum junction temperature and how does it affect derating?

The BSZ037N06LS5ATMA1 has a maximum junction temperature of 150 °C. At T_C = 100 °C, its continuous drain current drops to 65 A (V_GS = 10 V), and power dissipation falls to 2.1 W under ambient-cooled conditions (R_thJA = 60 °C/W). Derating curves in Figure 2 of the datasheet must be applied for case temperatures above 25 °C to maintain safe SOA operation.

Is this MOSFET suitable for 3.3 V gate drive in synchronous rectification?

Yes. With V_GS(th) ranging from 1.1 V to 2.3 V and R_DS(on) = 4.2 mΩ (max) at V_GS = 4.5 V, the device fully enhances at 3.3 V gate drive-achieving ~85% of its 10 V-rated R_DS(on). This makes it compatible with 3.3 V microcontrollers and gate drivers like the UCC27531 without external level shifting.

How does the TSDSON-8 FL package improve thermal performance over standard SO-8?

The TSDSON-8 FL package uses an exposed drain pad on the bottom surface, enabling direct thermal conduction to the PCB's inner copper layers or external heatsink. Its R_thJC = 1.8 °C/W (bottom) is 3× lower than typical SO-8 packages (~5–6 °C/W), allowing >3× higher power dissipation before reaching thermal limits-critical for high-current VRM phases.

Does the body diode support zero-voltage switching (ZVS) in resonant topologies?

Yes. The body diode's low Q_rr (11–22 nC) and fast t_rr (24–48 ns) enable clean commutation in LLC and phase-shifted full-bridge converters. When paired with proper dead-time tuning and resonant tank design, it supports reliable ZVS turn-on, reducing switching loss and EMI generation in high-frequency (>300 kHz) operation.

BSZ037N06LS5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-34

BSZ037N06LS5ATMA1 FAQ

1.How can I place an order for BSZ037N06LS5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ037N06LS5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ037N06LS5ATMA1 reliable?

The price and inventory of BSZ037N06LS5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ037N06LS5ATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ037N06LS5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ037N06LS5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ037N06LS5ATMA1?

BSZ037N06LS5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ037N06LS5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ037N06LS5ATMA1?

For technical support, including BSZ037N06LS5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ037N06LS5ATMA1 requirements.

6.How does Aetrix verify that BSZ037N06LS5ATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ037N06LS5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ037N06LS5ATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ037N06LS5ATMA1?

All BSZ037N06LS5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ037N06LS5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ037N06LS5ATMA1 part is unused and in its original packaging.

Return procedure for BSZ037N06LS5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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